24 results on '"Sune, J."'
Search Results
2. Detection of inhibitory effects in the generation of breakdown spots in HfO2-based MIM devices
3. SPICE model for the current-voltage characteristic of resistive switching devices including the snapback effect
4. Characterization of HfO2-based devices with indication of second order memristor effects
5. Effect of the voltage ramp rate on the set and reset voltages of ReRAM devices
6. Spatial analysis of failure sites in large area MIM capacitors using wavelets
7. Breakdown time statistics of successive failure events in constant voltage-stressed Al2O3/HfO2 nanolaminates
8. Resistive switching in CeO2/La0.8Sr0.2MnO3 bilayer for non-volatile memory applications
9. Temperature and polarity dependence of the switching behavior of Ni/HfO2-based RRAM devices
10. Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown
11. Effect of an ultrathin SiO2 interfacial layer on the hysteretic current–voltage characteristics of CeOx-based metal–insulator–metal structures
12. Degradation and breakdown characteristics of Al/HfYOx/GaAs capacitors
13. Initial leakage current related to extrinsic breakdown in HfO 2/Al 2O 3 nanolaminate ALD dielectrics
14. A physics-based deconstruction of the percolation model of oxide breakdown
15. Critical evaluation of hard-breakdown based reliability methodologies for ultrathin gate oxides
16. Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin oxides
17. Bohm trajectories and their potential use for the Monte Carlo simulation of resonant tunnelling diodes
18. Bohm trajectories for the modeling of tunneling devices
19. Relation between degradation and breakdown of thin SiO 2 films under AC stress conditions
20. On the breakdown statistics of very thin SiO 2 films
21. After-breakdown conduction through ultrathin SiO 2 films in metal/insulator/semiconductor structures
22. On the SiO x transition layer in abrupt Si-SiO 2 chemical interface in MOS structures
23. Characterization of the metal-SiO 2-Si interface roughness by electrical methods
24. On the SiO x transition layer in abrupt Si-SiO 2 chemical interface in MOS structures
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.