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Solution-processed AlO x thin films were annealed at different temperatures (250, 350, 450 and 550 °C). The annealing effects on the physical properties of AlO x thin films were studied. It is found that the leakage current density is decreased with increasing annealing temperature. The AlO x thin film annealed at 550 °C exhibits the best insulation performance with a current density of 2.7×10 −9 A/cm 2 at a bias voltage of 3 V. In order to demonstrate the feasibility of application in the thin film transistor (TFT) devices, an indium–titanium–zinc-oxide TFT based on AlO x dielectric was integrated. The TFT can be operated under a low voltage of 5 V, with a high field effect mobility of 23.7 cm 2 /Vs, a threshold voltage of 1.5 V, a subthreshold swing of 0.22 V/decade, and an on/off current ratio of 10 6 . The results demonstrate that AlO x dielectric thin film prepared by solution process is a promising gate dielectric candidate for high-performance oxide devices. The results indicated the potential applications in transparent electronics. [ABSTRACT FROM AUTHOR]

Abstract: In this paper, superlens realized by a two-dimensional (2D) triangular lattices graded photonic crystal (GPC) was studied. The graded photonic crystal (GPC) was obtained by varying the radius in each row so that its effective refractive index changes along the transverse direction. Plane wave expansion (PWE) method and finite-difference time-domain (FDTD) were adopted to show that negative refraction and superlens can be realized in the designed graded photonic crystal. [Copyright &y& Elsevier]