Search

We present the effect of interface quality on the performance of InAsSb based hetero n-i -p middle wavelength infrared (MWIR) photodiodes. By adopting heavily doping wide bandgap p- and n-type layers and inserting a thin layer between the two doped layers and the absorbing InAsSb region, the interface quality can be improved. We also employed proper fabrication processes in device fabrication to improve surface quality. It is found that the improved interface and surface quality can reduce the noise current and enhance detection performance. A detectivity of ∼1.5 × 10 9 cmHz 1/2 W −1 can be achieved at room temperature, and it can be increased to ∼4.0 × 10 9 cmHz 1/2 W −1 at 250 K. [ABSTRACT FROM AUTHOR]

Ge x Sn 1-x is one of the most promising materials in optoelectronics for its direct band-gap nature. In this paper, we report high-quality Ge and Sn thin films deposited on Si (001) substrates by magnetron sputtering. We found that the growth power and chamber pressure affect the quality of the Ge and Sn thin films significantly but in different ways. By optimizing the deposition conditions, high quality Ge and Sn films are achieved. A clear peak of Ge (004) phase in the x-ray diffraction (XRD) pattern which indicates a high-quality Ge lattice formed is observed, and post-treatment like rapid thermal annealing does not significantly affect the quality of the thin films. [ABSTRACT FROM AUTHOR]

InAsSb based infrared photodetector is an alternative to the existing HgCdTe, PbSnTe, and InSb counterparts, but its room temperature performance is still relatively poor. One of the ways to improve its performance is through surface plasmon, which provides near field confinement that leads to enhancement in light matter interaction. In this work, the role of each parameter of two dimensional metallic hole arrays in plasmonic enhancement is studied in details, such as the periodicity of hole array, hole diameter and metal film thickness. The plasmonic resonances and their corresponding electric field distributions are comprehensively studied in finite difference time domain simulation, which also would serve as a guide for designing surface plasmon enhanced InAsSb infrared detector with high quantum efficiency and signal-to-noise ratio. [ABSTRACT FROM AUTHOR]

We prepare undoped Mn 1.5 Co 1 Ni 0.5 O 4 and Cu and Sc co-doped Mn 1.5 Co 1 Ni 0.25 Cu x Sc 0.25−x O 4 (x = 0.05, 0.1, 0.15) films on Al 2 O 3 substrate by chemical solution deposition method. The crystallinity, surface morphologies, electrical transport property, optical property, and 1/ f noise property of these films are characterized. It shows that the Mn 1.5 Co 1 Ni 0.25 Cu 0.15 Sc 0.1 O 4 film possesses excellent electrical transport, optical and 1/ f noise properties compared with the other films. The absolute temperature coefficient of resistance and characteristic temperature of the Mn 1.5 Co 1 Ni 0.25 Cu 0.15 Sc 0.1 O 4 film are higher than that of Mn 1.5 Co 1 Ni 0.5 O 4 film, while its resistivity of 250 Ω·cm at 295 K is half of that Mn 1.5 Co 1 Ni 0.5 O 4 film. The transmittance and reflectance spectra of the films are measured and analyzed in the range of 0.55–2.0 µm, all the films show similar absorption structures in the measured spectrum. The 1/ f noise of the co-doped Mn 1.5 Co 1 Ni 0.5 O 4 films decreases significantly. The (γ/n)0.5/| TCR | value of the Mn 1.5 Co 1 Ni 0.25 Cu 0.15 Sc 0.1 O 4 reaches 2.3 × 10−12 cm1.5 K/% at 295 K, which is two orders lower than that of Mn 1.5 Co 1 Ni 0.5 O 4 film. Our results discover a thermosensitive material with excellent performance, which is expected to be applied to high performance uncooled infrared detectors. • We did a complete and systematic study for the Cu and Sc co-dopants effects on the electrical transport, optical, and low-frequency noise properties of Mn 1.5 Co 1 Ni 0.5 O 4 (MCN) thin films. • Mn 1.5 Co 1 Ni 0.25 Cu 0.15 Sc 0.1 O 4 thin film was found to be excellent electrical transport, optical and low-frequency noise performance, and we investigated and discussed the mechanisms of enhanced performance of the Cu and Sc co-doped MCN films. • The optical and low-frequency noise properties of Cu and Sc Co-doped MCN films were studied for the first time. • This study provides an insight to understand the effects of Cu and Sc co-dopants on Mn 1.5 Co 1 Ni 0.5 O 4 thin films, which has great significance for preparing high-performance uncooled infrared detectors based on MCN films. [ABSTRACT FROM AUTHOR]