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Abstract: In this work we investigate CO2 laser annealing at millisecond time scale for the fabrication of Ultra Shallow Junctions, able to fulfill the requirements imposed for sub-45nm CMOS nodes. Silicon samples doped with Boron using BF3 plasma implantation technique at low energy (0.4 and 0.6keV) were used to ensure ultra shallow as implanted boron concentration profiles. Our aim is to achieve high electrical activation level of the dopant, while maintaining the Boron concentration profile as immobile as possible. Samples have been irradiated at a variety of annealing conditions regarding the duration of the irradiation and the power density; however, in every case the peak surface temperature was kept in the range of 1080–1320°C. Sheet resistance measurements indicate significant enhancement in the activation levels, while chemical characterization by means of SIMS, shows very limited movement of the dopant concentration profile, especially for short pulse duration conditions. [Copyright &y& Elsevier]

This paper discusses the nucleation and growth mechanisms of ZnO nanorod thin-films and larger sized crystallites that form within the solution and on surfaces during an ultra-fast microwave heating growth process. In particular, the work focusses on the elimination of crystallites as this is necessary to improve thin-film uniformity and to prevent electrical short circuits between electrodes in device applications. High microwave power during the early stages of ZnO deposition was found to be a key factor in the formation of unwanted crystallites on substrate surfaces. Once formed, the crystallites, grow at a much faster rate than the nanorods and quickly dominate the thin-film structure. A new two-step microwave heating method was developed that eliminates the onset of crystallite formation, allowing the deposition of large-area nanorod thin-films that are free from crystallites. A dissolution-recrystallization mechanism is proposed to explain why this procedure is successful and we demonstrate the importance of the work in the fabrication of low-cost memristor devices. [ABSTRACT FROM AUTHOR]