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Out-of-hospital cardiac arrest (OHCA) remains a significant cause of mortality and morbidity worldwide. Extracorporeal cardiopulmonary resuscitation (ECPR) is a potential intervention for OHCA, but its effectiveness compared to conventional cardiopulmonary resuscitation (CCPR) needs further evaluation. We systematically searched PubMed, Embase, the Cochrane Library, Web of Science, and ClinicalTrials.gov for relevant studies from January 2010 to March 2023. Pooled meta-analysis was performed to investigate any potential association between ECPR and improved survival and neurological outcomes. This systematic review and meta-analysis included two randomized controlled trials enrolling 162 participants and 10 observational cohort studies enrolling 4507 participants. The pooled meta-analysis demonstrated that compared to CCRP, ECPR did not improve survival and neurological outcomes at 180 days following OHCA (RR: 3.39, 95% CI: 0.79 to 14.64; RR: 2.35, 95% CI: 0.97 to 5.67). While a beneficial effect of ECPR was obtained regarding 30-day survival and neurological outcomes. Furthermore, ECPR was associated with a higher risk of bleeding complications. Subgroup analysis showed that ECPR was prominently beneficial when exclusively initiated in the emergency department. Additional post-resuscitation treatments did not significantly impact the efficacy of ECPR on 180-day survival with favorable neurological outcomes. There is no high-quality evidence supporting the superiority of ECPR over CCPR in terms of survival and neurological outcomes in OHCA patients. However, due to the potential for bias, heterogeneity among studies, and inconsistency in practice, the non-significant results do not preclude the potential benefits of ECPR. Further high-quality research is warranted to optimize ECPR practice and provide more generalizable evidence. Clinical trial registration PROSPERO , https://www.crd.york.ac.uk/prospero/ , registry number: CRD42023402211. [ABSTRACT FROM AUTHOR]

This review highlights the synthesis and applications of the carbon nitride (CN x) family with not only the different carbon/nitrogen ratios but also different basic units and linkages (triazine, triazole, and azo-linkage). Carbon nitride is a polymer semiconductor composed of carbon and nitrogen, with a basic sp2/sp3 unit of aromatic C–N rings. The most commonly synthesized form of graphitic carbon nitride (g-C 3 N 4) has a bandgap energy of 2.6–2.7 eV, making it suitable as a visible light-driven photocatalyst. Further, nitrogen atoms at the edges of 2D g-C 3 N 4 nanosheets have lone pair electrons, which can act as Lewis base sites in catalytic conversion reactions. The carbon/nitrogen ratio in carbon nitride and its structural features are affected by its precursors and the synthetic process. When the nitrogen content or carbon vacancy is increased in g-C 3 N 4 , the defects or unbonded nitrogen may act as recombination centers or introduce states within the forbidden gap, which affect the photocatalytic reaction. Contrastingly, the additional lone pair electrons provided by the unbonded nitrogen are advantageous to the catalytic reaction. However, excess nitrogen may result in the formation of unstable C–N–N bonds that weaken its structural stability. The correlation between different units, including triazine, triazole, tri-heptazine, and azo-linkage, in C 3 N x (x = 3–7) was studied to understand its structural features and their activity in photocatalytic and catalytic reactions. In this review, we summarize the latest synthetic approaches of CN x and discuss the outlooks of these materials for energy and environmental applications. [Display omitted] [ABSTRACT FROM AUTHOR]

Abstract: The influence of process condition on the resistivity of the arsenic-doped polysilicon electrode for the cell capacitors in trench DRAM was investigated. Rather than the arsine flow, it is found that the thickness of the undoped amorphous silicon plays a vital role in determining the overall resistivity. When the total polysilicon thickness is kept unchanged, moderately increasing the thickness of the lower two undoped amorphous silicon would engender a reduced resistivity while moving the arsenic peak location away from the polysilicon/storage dielectric interface, which is critical in leakage current suppression. With these improved properties, less bit line coupling (BLC) loss from the characterization on DRAM product is observed. The result of this study is quite important for trench DRAM manufacturer to enhance product yield before the technology of metal electrode is mature. [Copyright &y& Elsevier]

• We have successfully fabricated the Cu-Zn alloy micropillars by microanode-guided electroplating (MAGE) process. • The effect of bath composition on the micropillar composition and mechanical property was of concern. • Surface morphology, composition, crystal phase, microstructure and property of the micropillars are significantly dominated by the ratio of [Zn2+/[Cu2+ in the bath. • The micropillar was composed of 40.51 at.% Zn, present in nanocrystals by a mixed phases of α and β, displays the most remarkable mechanical property (i.e., hardness at 5.30 GPa; young's modulus at 113.64 GPa). Cu–Zn alloy micropillars were fabricated using microanode-guided electroplating (MAGE) at a constant voltage of 4.6 V under an initial inter-electrode gap of 30 µm in pyrophosphate baths. Energy-dispersive spectroscopy and X-ray diffractometry analysis revealed that the micropillar alloys exhibit an increase in the Zn content from 8.05 at.% (in α phase) to 54.60 at.% (in β, and β' phases) with an increase in the ratio of [Zn2+/[Cu2+ in the bath from 8/1 to 128/1. Transmission electron microscopy revealed that the Cu–Zn alloy micropillars were composed of nano-grains with different sizes depending on the bath employed. Nano-indentation test indicated that the micropillar containing 40.51 at.% Zn (in presence of β-phase) exhibits the maximum hardness (at 5.30 GPa) and highest Young's modulus (at 113.64 GPa). Simulation of the electric field using the commercial software COMSOL 5.2 revealed that the highest field strength centralized at the cylindrical top displayed only a slight increase (from 152.2 to 152.5 kV/m) with an increase in the ratio of [Zn2+/ [Cu2+ in the bath. Potentiodynamic cathodic polarization is useful for understanding the mechanism of microanode-guided electroplating. Electrochemical impedance spectroscopy performed at characteristic potentials confirms the mechanism extremely well. [Display omitted] [ABSTRACT FROM AUTHOR]

Growth-regulating factor (GRF) is a transcription factor unique to plants that plays a crucial role in the growth, development and stress adaptation of plants. However, information on the GRFs related to salt stress in Populus davidiana × P. bolleana is lacking. In this study, we characterized the activity of PdbGRF1 in transgenic Populus davidiana × P. bolleana under salt stress. qRT PCR analyses showed that PdbGRF1 was highly expressed in young leaves and that the pattern of PdbGRF1 expression was significantly changed at most time points under salt stress, which suggests that PdbGRF1 expression may be related to the salt stress response. Moreover, PdbGRF1 overexpression enhanced tolerance to salt stress. A physiological parameter analysis showed that the overexpression of PdbGRF1 significantly decreased the contents of hydrogen peroxide (H 2 O 2) and malondialdehyde (MDA) and increased the activities of antioxidant enzymes (SOD and POD) and the proline content. A molecular analysis showed that PdbGRF1 regulated the expression of PdbPOD17 and PdbAKT1 by binding to the DRE ('A/GCCGAC') in their respective promoters. Together, our results demonstrate that the binding of PdbGRF1 to DRE regulates genes related to stress tolerance and activates the associated physiological pathways, and these effects increase the ROS scavenging ability, reduce the degree of damage to the plasma membrane and ultimately enhance the salt stress response in Populus davidiana × P. bolleana. • PdbGRF1 acts as a transcriptional activator to enhance salt stress tolerance by regulating PdbPOD17 and PdbAKT1. [ABSTRACT FROM AUTHOR]