27 results on '"Wang, Tongqing"'
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2. Behavioral feature recognition of multi-task compressed sensing with fusion relevance in the Internet of Things environment
3. RE (La, Nd and Yb) doped CeO2 abrasive particles for chemical mechanical polishing of dielectric materials: Experimental and computational analysis
4. The effect of citric acid based cleaning solution on particle adhesion and removal during post-Cu CMP cleaning
5. A high capacity reversible data hiding scheme based on right-left shift
6. Improvement of via dishing and non-uniformity in TSV chemical mechanical planarization
7. Effects of KIO4 concentration and pH values of the solution relevant for chemical mechanical polishing of ruthenium
8. Material removal mechanism of copper chemical mechanical polishing in a periodate-based slurry
9. Chemical effects on the tribological behavior during copper chemical mechanical planarization
10. Synergetic effect of potassium molybdate and benzotriazole on the CMP of ruthenium and copper in KIO4-based slurry
11. Optimization of design of experiment for chemical mechanical polishing of a 12-inch wafer
12. In-situ measurement of Cu film thickness during the CMP process by using eddy current method alone
13. Effect of zone pressure on wafer bending and fluid lubrication behavior during multi-zone CMP process
14. Effect of a Cu seed layer on electroplated Cu film
15. Electrochemical investigation of copper passivation kinetics and its application to low-pressure CMP modeling
16. The role of dipotassium ethylenediaminetetraacetic acid and potassium oleate on chemical mechanical planarization relevant to heterogeneous materials of cobalt interconnects.
17. Effects of catalyst concentration and ultraviolet intensity on chemical mechanical polishing of GaN.
18. Effect of photocatalytic oxidation technology on GaN CMP.
19. Surface characteristics of ruthenium in periodate-based slurry during chemical mechanical polishing.
20. Numerical and experimental investigation on multi-zone chemical mechanical planarization
21. Micro-galvanic corrosion of Cu/Ru couple in potassium periodate (KIO4) solution.
22. A theoretical model incorporating both the nano-scale material removal and wafer global uniformity during planarization process.
23. Comparative study of the lubricating behavior between 12-in. copper disk and wafer during chemical mechanical polishing.
24. A status report of the ISOL facility in Lanzhou
25. Wafer bending/orientation characterization and their effects on fluid lubrication during chemical mechanical polishing.
26. Mechanical wear behavior between CeO2(100), CeO2(110), CeO2(111), and silicon studied through atomic force microscopy.
27. A reinforcement ensemble deep transfer learning network for rolling bearing fault diagnosis with Multi-source domains.
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