1. 200 V Fast Recovery Epitaxial Diode with superior ESD capability.
- Author
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Irace, A., Maresca, L., Mirone, P., Riccio, M., Breglio, G., Bellemo, L., Carta, R., Naretto, M., El Baradai, N., Para, I., and Di Santo, N.
- Subjects
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ELECTROSTATIC discharges , *EPITAXY , *SEMICONDUCTOR diodes , *SIMULATION methods & models , *COMPUTER-aided design , *BREAKDOWN voltage - Abstract
In this paper the Electrostatic Discharge (ESD) capability of 200 V Fast Recovery Epitaxial Diodes (FREDs) is analysed by means of suitable experiments, TCAD simulations and theoretical analyses. Different doping profiles are investigated in order to improve the ESD robustness of a standard device and an optimized doping profile is proposed. The newly fabricated devices show a remarkably high ESD capability without any significative loss in forward voltage drop and a reduction of the breakdown voltage that does not affect device rating. [ABSTRACT FROM AUTHOR] more...
- Published
- 2016
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