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12 results on '"di Santo G"'

2. Surface Zn enrichment induced by excimer laser annealing in ZnO nanorods

Author

Carlomagno, I, Lucarini, I, Secchi, V, Maita, F, Polese, D, Mirabella, S, Franzo, G, Notargiacomo, A, Di Santo, G, Gonzalez, S, Petaccia, L, Maiolo, L, Carlomagno I., Lucarini I., Secchi V., Maita F., Polese D., Mirabella S., Franzo G., Notargiacomo A., Di Santo G., Gonzalez S., Petaccia L., Maiolo L., Carlomagno, I, Lucarini, I, Secchi, V, Maita, F, Polese, D, Mirabella, S, Franzo, G, Notargiacomo, A, Di Santo, G, Gonzalez, S, Petaccia, L, Maiolo, L, Carlomagno I., Lucarini I., Secchi V., Maita F., Polese D., Mirabella S., Franzo G., Notargiacomo A., Di Santo G., Gonzalez S., Petaccia L., and Maiolo L.

Abstract

ZnO nanorods (NRs) play a crucial role in the manufacturing of electronic and optical devices and sensors. Using complementary techniques, we explore how their optical and conductive performances can be improved by Excimer Laser Annealing (ELA) at 75 and 100 mJ/cm2. Our data show that ELA induces the melting and re-crystallization of the NRs surface, resulting into the reduction of the average crystallite size and lattice parameter of the system and suggesting a partial transition towards metallic Zn. The increase of Zn and the removal of oxygen defects at the surface are compatible with photoelectron spectroscopies (UPS and XPS) data and explain the enhancement of the UV/visible emission ratio observed in photoluminescence. The ELA also affects the in-plane electrical conductivity: the carriers mobility improves up to 4 times depending on the laser energy density. Our results demonstrate that ELA is effective in tuning the surface properties of ZnO NRs affecting the Zn concentration at the surface and removing some oxygen defects. The combination of these two effects results into the improvement of the optical and electrical responses of the systems.

Published
2022

12. High-quality graphene on single crystal Ir(1 1 1) films on Si(1 1 1) wafers: Synthesis and multi-spectroscopic characterization.

Author

Struzzi, C., Verbitskiy, N.I., Fedorov, A.V., Nefedov, A., Frank, O., Kalbac, M., Di Santo, G., Panighel, M., Goldoni, A., Gärtner, J., Weber, W., Weinl, M., Schreck, M., Wöll, Ch., Sachdev, H., Grüneis, A., and Petaccia, L.

Subjects
*GRAPHENE, *SINGLE crystals, *ELECTRON spectroscopy, *CHEMICAL vapor deposition, *OPTICAL spectroscopy, *X-ray photoelectron spectroscopy
Abstract

The characterization of graphene by electron and optical spectroscopy is well established and has led to numerous breakthroughs in material science. Yet, it is interesting to note that these characterization methods are almost never carried out on the same sample, i.e., electron spectroscopy uses epitaxial graphene while optical spectroscopy relies on cleaved graphene flakes. In order to bring coherence and convergence to this branch, a universal and easy-to-prepare substrate is needed. Here we suggest that chemical vapour deposition (CVD) grown graphene on thin monocrystalline Ir(1 1 1) films, which are grown heteroepitaxially on Si(1 1 1) wafers with an yttria stabilized zirconia (YSZ) buffer layer, perfectly meets these needs. We investigate graphene prepared in this way by low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, angle-resolved photoemission spectroscopy (ARPES), resonance Raman spectroscopy, and scanning tunnelling microscopy (STM). Our results highlight the excellent crystalline quality of graphene, comparable to graphene prepared on Ir(1 1 1) bulk single crystals. This synthesis route allows for large-area, inexpensive growth on standardized disposable substrates, suitable for both optical and electron spectroscopic characterization, which meets the needs of many researchers in the field. [ABSTRACT FROM AUTHOR]

Published
2015
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