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4. Immunohistochemical detection of IL-17 and IL-23 improves the identification of patients with a possible diagnosis of Sjogren's syndrome

Author

Fusconi, Massimo, primary, Musy, Isotta, additional, Valente, Daniele, additional, Maggi, Elisa, additional, Priori, Roberta, additional, Pecorella, Irene, additional, Mastromanno, Linda, additional, Di Cristofano, Claudio, additional, Greco, Antonio, additional, Armeli, Federica, additional, Candelori, Francesca, additional, de Vincentiis, Marco, additional, Gallo, Andrea, additional, and Businaro, Rita, additional

Published
2020
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6. Generating weights for the Weil representation attached to an even order cyclic quadratic module

Author

Luca Candelori, Gene S. Kopp, and Cameron Franc

Subjects
Complex representation, quadratic module, Modular form, metaplectic group, Theta function, 0102 computer and information sciences, critical weights, 01 natural sciences, Prime (order theory), Combinatorics, Quadratic equation, vector-valued modular form, theta function, FOS: Mathematics, Order (group theory), Number Theory (math.NT), 0101 mathematics, half-integral weight, Mathematics, imaginary quadratic field, Algebra and Number Theory, Mathematics - Number Theory, 010102 general mathematics, Dirichlet class number formula, Weil representation, quadratic form, generating weights, Algebra, Metaplectic group, 010201 computation theory & mathematics, Quadratic form, metaplectic orbifold, Serre duality, positive-definite lattice
Abstract

Text We develop geometric methods to study the generating weights of free modules of vector-valued modular forms of half-integral weight, taking values in a complex representation of the metaplectic group. We then compute the generating weights for modular forms taking values in the Weil representation attached to cyclic quadratic modules of order 2 p r , where p ≥ 5 is a prime. We also show that the generating weights approach a simple limiting distribution as p grows, or as r grows and p remains fixed. Video For a video summary of this paper, please visit https://youtu.be/QNbPSXXKot4 .

Published
2017
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7. Male factor infertility and lack of openness about infertility as risk factors for depressive symptoms in males undergoing assisted reproductive technology treatment in Italy

Author

Ivana Antonucci, Alessandra Babore, Carmen Trumello, Carla Candelori, and Liborio Stuppia

Subjects
Adult, Male, Infertility, medicine.medical_specialty, Reproductive Techniques, Assisted, medicine.medical_treatment, Emotions, Affect (psychology), Male infertility, 03 medical and health sciences, 0302 clinical medicine, Cost of Illness, Risk Factors, Surveys and Questionnaires, Intervention (counseling), Adaptation, Psychological, Openness to experience, Humans, Medicine, Interpersonal Relations, 030212 general & internal medicine, Psychiatry, Infertility, Male, Depression (differential diagnoses), Psychiatric Status Rating Scales, 030219 obstetrics & reproductive medicine, Assisted reproductive technology, Depression, business.industry, Communication, Obstetrics and Gynecology, medicine.disease, Cross-Sectional Studies, Italy, Reproductive Medicine, Female, Family Relations, business, Male factor infertility
Abstract

Objective To investigate the association between male factor infertility and openness to discussing assisted reproductive technology (ART) treatment with levels of depression among men undergoing infertility treatment. Design Cross-sectional. Setting Not applicable. Patient(s) Three hundred forty participants (170 men and their partners) undergoing ART treatments. Intervention(s) Administration of a set of questionnaires. Main Outcome Measure(s) Depressive symptoms were detected by means of the Zung Depression Self-Rating Scale. Participants' willingness to share their infertility treatment experience with other people was assessed by means of self-report questionnaires. Result(s) In this study, 51.8% of males chose not to discuss their ART treatments with people other than their partner. In addition, the decision to discuss or not discuss the ART treatments with others was significantly associated with men's depressive symptoms. Male factor infertility was significantly associated with depression when considered together with the decision not to discuss ART treatments with others. A general disposition characterized by a lack of openness with others seemed to be a significant predictor of depression. Conclusion(s) There is a need for routine fertility care to pay greater attention to men's emotional needs. Before commencing reproductive treatment, male patients may benefit from undergoing routine screening for variables (i.e., male factor infertility and openness to others about ART) that may affect their risk of depression.

Published
2017
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8. Psychological effects of the COVID-2019 pandemic: Perceived stress and coping strategies among healthcare professionals

Author

Maria Luisa Viceconti, Sonia Monique Bramanti, Lucia Lombardi, Silvia Pignataro, Carmen Trumello, Carla Candelori, Monia Crudele, Valentina Marino, and Alessandra Babore

Subjects
Adult, Male, Health Personnel, Protective factor, Disease, coping strategies, Article, stress, Occupational Stress, Young Adult, 03 medical and health sciences, Social support, 0302 clinical medicine, Risk Factors, Adaptation, Psychological, Pandemic, Stress (linguistics), Humans, Workplace, Pandemics, Socioeconomic status, Biological Psychiatry, Health professionals, SARS-CoV-2, pandemic, healthcare professional, COVID-19, Social Support, Middle Aged, 030227 psychiatry, Psychiatry and Mental health, Distress, Italy, Socioeconomic Factors, Female, Psychology, 030217 neurology & neurosurgery, Clinical psychology
Abstract

Highlights • During a sudden and unprecedented event, such as the current pandemic, healthcare workers may be inadequately prepared and supported to cope with stressors and this negatively affected working environment. • For healthcare professionals, a positive attitude towards the stressful situation was the main protective factor, while female gender, seeking social support, avoidance strategies and working with Covid-19 patients were risk factors. • It is important to investigate the response of healthcare professionals to the Covid-19 pandemic, in terms of perceived stress and coping strategies, in order to implement targeted prevention and intervention programs., Starting from China, the coronavirus disease (Covid-19) contagion spread unexpectedly and quickly all over the world, particularly affecting Italy. In the early stages of the epidemic, healthcare professionals have been in the front-line to manage the infection. The current study aimed to analyse the impact of Covid-19 outbreak on healthcare professionals and to detect some risk and protective factors of their distress levels, with regard to socio-demographic variables, direct exposure to Covid-19 and the coping strategies used to deal with stress. The data were collected during the peak of the infection. A total of 595 healthcare professionals enrolled in the study and completed the measures of socio-demographical and professional data, perceived stress (PPS) and coping strategies (COPE-NIV-25). Overall, we found that a positive attitude towards the stressful situation was the main protective factor, while female gender, seeking social support, avoidance strategies and working with Covid-19 patients were risk factors. Economic status, problem solving ability and turning to religion were not associated with stress levels. This study, one of the first on this topic, highlighted the main coping strategies used by healthcare professionals in facing the highly stressful situation caused by the pandemic.

Published
2020
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9. Radiation tests of single photon avalanche diode for space applications

Author

Massimo Ghioni, Francesco Moscatelli, Piera Maccagnani, Davide Bolognini, Danilo Rubini, M. Prest, Ivan Rech, Angelo Gulinatti, Georg Simmerle, Claudio Labanti, Andrea Candelori, Andrea Giudice, Xiaoli Sun, Martino Marisaldi, John F. Cavanaugh, Serena Mattiazzo, F. Fuschino, and Alessandro Berra

Subjects
Nuclear and High Energy Physics, Photon, Single photon detection, Photodetector, IRRADIATION FACILITY, Radiation, Optics, Space-qualified detectors, Radiation hardness, DETECTORS, Irradiation, Instrumentation, Radiation hardening, PROTON IRRADIATION, Diode, DAMAGE, Physics, sezele, business.industry, Settore FIS/01 - Fisica Sperimentale, PHOTODIODES, Gamma ray, DEFECTS, Single-photon avalanche diode, NEUTRON-IRRADIATION, Optoelectronics, business
Abstract

Single photon avalanche diodes (SPADs) have been recently studied as photodetectors for applications in space missions. In this presentation we report the results of radiation hardness test on large area SPAD (actual results refer to SPADs having 500 mu m diameter). Dark counts rate as low as few kHz at -10 degrees C has been obtained for the 500 mu m devices, before irradiation. We performed bulk damage and total dose radiation tests with protons and gamma-rays in order to evaluate their radiation hardness properties and their suitability for application in a Low Earth Orbit (LEO) space mission. With this aim SPAD devices have been irradiated using up to 20 krad total dose with gamma-rays and 5 krad with protons. The test performed show that large area SPADs are very sensitive to proton doses as low as 2 x 10(8) (1 MeV eq) n/cm(2) with a significant increase in dark counts rate (DCR) as well as in the manifestation of the "random telegraph signal" effect. Annealing studies at room temperature (RT) and at 80 degrees C have been carried out, showing a high decrease of DCR after 24-48 h at RT. Lower protons doses in the range 1-10 x 10(7) (1 MeV eq) n/cm(2) result in a lower increase of DCR suggesting that the large-area SPADs tested in this study are well suitable for application in low-inclination LEO, particularly useful for gamma-ray astrophysics. (c) 2013 Elsevier B.V. All rights reserved.

Published
2013
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10. Neutron production targets for a new Single Event Effects facility at the 70 MeV Cyclotron of LNL-INFN

Author

L. Silvestrin, Serena Mattiazzo, Andrea Candelori, G. Prete, Natalia Dzysiuk, J. Wyss, Juan Esposito, Dario Bisello, and Pierfrancesco Mastinu

Subjects
Physics, Range (particle radiation), Proton, business.industry, Cyclotron, Settore FIS/01 - Fisica Sperimentale, irradiation facility, neutron radiation effects, Physics and Astronomy(all), Single Event Effects, atmospheric neutrons, law.invention, Nuclear physics, law, Physics::Accelerator Physics, Microelectronics, Neutron, Nuclear Experiment, business, Neutron irradiation, Event (particle physics)
Abstract

A high-current (500 μA) variable energy (35-70 MeV) proton cyclotron is under construction at the INFN LNL for the SPES project and will be commissioned in 2014. This opens up the prospect of a high flux neutron irradiation facility in Italy that could perform various research activities, in particular studies of Single Event Effects (SEE) induced in microelectronic devices and systems by atmospheric neutrons at sea level. In this paper we first review neutron-induced SEE, describe neutron testing facilities and briefly illustrate the project at LNL. We then describe two types of high power production targets under design to produce neutrons with a continuous atmospheric-like differential energy spectra in the energy range accessible to the accelerator. One target is a high power W-based thick target that will completely stop the 70 MeV protons. Another target, under preliminary study, is based on a multi-material target made, in this case, of two different materials, light (Be) and a heavy material such as Ta or Pb.

Published
2012
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11. Giant Leiomyomatous Hamartoma of the Tongue

Author

Paulo Rogério de Faria, Adriano Mota Loyola, Sérgio Vitorino Cardoso, Antonio Francisco Duriguetto, Kelen Christine do Nascimento Souza, Ignez Candelori, and Jonas Dantas Batista

Subjects
Pathology, medicine.medical_specialty, Leiomyoma, business.industry, Hamartoma, Myocytes, Smooth Muscle, S100 Proteins, Middle Aged, medicine.disease, Actins, Tongue Diseases, Diagnosis, Differential, Immunoenzyme Techniques, Lymphatic system, medicine.anatomical_structure, Otorhinolaryngology, Tongue, Humans, Mesenchymoma, Medicine, Female, Surgery, Oral Surgery, business
Abstract

t U f r b u s i o p amartoma has been defined as a focal benign tumorike mass composed of a disordered mixture of maure tissues that normally occur in the affected part, ut with predominance of one particular tissue to this rea. Clinically, these lesions grow in concert with he patient and therefore do not show any tendency or uncontrolled growth. In oral tissues, hamartomas omposed of blood or lymphatic vessels (hemangioas and lymphangiomas) are relatively common. hese are usually single lesions in otherwise healthy atients, while there are eventual reports of associaion with congenital developmental defects such as

Published
2008
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12. Radiation hardness assurance of the CLARO8 front-end chip for the LHCb RICH detector upgrade

Author

Andreotti, M., primary, Baldini, W., additional, Baszczykc, M., additional, Calabrese, R., additional, Candelori, A., additional, Carniti, P., additional, Cassina, L., additional, Ramusino, A. Cotta, additional, Dorosz, P., additional, Fiorini, M., additional, Giachero, A., additional, Gotti, C., additional, Kucewicz, W., additional, Luppi, E., additional, Maino, M., additional, Malaguti, R., additional, Mattiazzo, S., additional, Minzoni, L., additional, Pappalardo, L.L., additional, Pessina, G., additional, Silvestrin, L., additional, and Tomassetti, L., additional

Published
2017
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15. Localized energy levels generated in Magnetic Czochralski silicon by proton irradiation and their influence on the sign of space charge density

Author

Ioana Pintilie, Claudio Piemonte, E. M. Verbitskaya, Nicola Zorzi, V. K. Eremin, Anna Macchiolo, Mara Bruzzi, David Menichelli, A. Candelori, and M. Scaringella

Subjects
Physics, Nuclear and High Energy Physics, Proton, Silicon, Annealing (metallurgy), chemistry.chemical_element, Fluence, Space charge, Molecular physics, Nuclear magnetic resonance, chemistry, Radiation damage, Irradiation, Instrumentation, Diode
Abstract

The microscopic damage produced in diodes made of n-type Magnetic Czochralski (MCz) silicon by 24 GeV and 26 MeV protons, up to the fluence of 1.3 × 10 15 cm - 2 1 MeV equivalent neutrons, has been investigated and results are compared to the damage produced in devices made of standard Floating Zone (STFZ) silicon. It is found by means of Thermally Stimulated Currents (TSC) that the production of a radiation induced charged defect is enhanced in MCz, and might be in part responsible for the differences observed in the two materials at room temperature. The influence of defects on the sign of the space charge density has been studied by current transients at constant temperature i ( T , t ) and by Transient Current Technique (TCT). Type inversion is not revealed up to the highest investigated fluence. Full depletion voltage V dep measurements versus fluence exhibits a minimum close to 2 × 10 14 cm - 2 1 MeV equivalent neutrons; at the same fluence, V dep measured as a function of annealing time changes its initial slope from positive to negative. It is shown by numerical simulations that these features can be accounted by the formation of a double junction, even in absence of type inversion.

Published
2007
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16. Radiation hardness of silicon detectors based on pre-irradiated silicon

Author

Vladimir Cindro, M. Mikelsen, Edouard Monakhov, A. Groza, M. I. Starchik, V. K. Dubovoy, V. Lastovetsky, L.I. Barabash, G.-F. Dalla Betta, A.P. Litovchenko, Piero Giubilato, P.G. Litovchenko, V. Khomenkov, D. Bisello, Nicola Zorzi, Maurizio Boscardin, A. Candelori, Robert R. Rando, W. Wahl, and Bengt Gunnar Svensson

Subjects
Physics, Nuclear and High Energy Physics, Silicon, business.industry, Doping, chemistry.chemical_element, Semiconductor detector, Nuclear physics, Semiconductor, chemistry, Radiation damage, Optoelectronics, Irradiation, business, Instrumentation, Radiation hardening, Diode
Abstract

Radiation hardness of planar detectors processed from pre-irradiated and thermo-annealed n-type FZ silicon substrates, and standard FZ as a reference, was studied. The high purity n-Si wafers with carrier concentration 4.8×10 11 cm −3 were pre-irradiated in Kiev's nuclear research reactor by fast neutrons to fluence of about 10 16 neutrons/cm 2 and thermo-annealed at a temperature of about 850 °C. Silicon diodes were fabricated from standard and pre-irradiated silicon substrates by IRST (Italy). All diodes were subsequently irradiated by fast neutrons at Kiev and Ljubljana nuclear reactors. The dependence of the effective doping concentration as a function of fluence ( N eff =f ( Φ )) was measured for reference and pre-irradiated diodes. Pre-irradiation of silicon improves the radiation hardness by decreasing the acceptor introduction rate ( β ), thus mitigating the depletion voltage ( V dep ) increase. In particular, β in reference samples is about 0.017 cm −1 , and for pre-irradiated samples is about 0.008 cm −1 . Therefore, the method of preliminary irradiation can be useful to increase the radiation hardness of silicon devices to be used as sensors or detectors in harsh radiation environments.

Published
2006
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17. Irradiation effects on thin epitaxial silicon detectors

Author

Nicola Zorzi, A. Litovchenko, Andrea Candelori, Claudio Piemonte, Federico Ravotti, Dario Bisello, Riccardo Rando, V. Khomenkov, and Mara Bruzzi

Subjects
Physics, Nuclear and High Energy Physics, Silicon, Physics::Instrumentation and Detectors, business.industry, Annealing (metallurgy), Doping, chemistry.chemical_element, Epitaxy, Fluence, Semiconductor detector, Condensed Matter::Materials Science, Semiconductor, chemistry, Optoelectronics, Irradiation, business, Instrumentation
Abstract

Radiation hardness of silicon detectors based on thin epitaxial layer on Czochralski (CZ) substrate for the LHC upgrade (Super-LHC) was studied. No type inversion was observed after irradiation by 24 GeV/c protons up to the fluence of 1016 p/cm2 due to overcompensating donor generation. After long-term annealing (corresponding to 500 days at room temperature) proton irradiated devices show a decrease of the effective doping concentration and then undergo type inversion. Measurements confirm that thin epitaxial devices on CZ substrate could be used for innermost layers of vertex detectors in future experiments at the Super-LHC.

Published
2006
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18. Radiation-hard detectors for very high luminosity colliders

Author

A. Candelori

Subjects
Physics, Nuclear and High Energy Physics, Large Hadron Collider, Luminosity (scattering theory), Silicon, Physics::Instrumentation and Detectors, business.industry, Detector, chemistry.chemical_element, Substrate (electronics), Radiation, Semiconductor detector, Nuclear physics, Semiconductor, chemistry, Physics::Accelerator Physics, High Energy Physics::Experiment, business, Instrumentation
Abstract

Recent results from the CERN RD50 Collaboration for the development of radiation-hard detectors for the LHC upgrade (Super-LHC) and in general for very high luminosity colliders are reported and discussed. Particularly, the attention is focused on Czochralski and Magnetic Czochralski silicon, thin detectors and p-type substrate devices.

Published
2006
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19. Production testing and quality assurance of CMS silicon microstrip tracker readout chips

Author

Michel Raymond, M. Tessaro, M.J. French, V. Khomenkov, A. Candelori, G. Hall, Etam Noah, L. Stefanutti, Dario Bisello, A. Kaminsky, P. Barrillon, J. Leaver, and Robert Bainbridge

Subjects
Physics, Nuclear and High Energy Physics, Large Hadron Collider, business.product_category, Silicon, business.industry, Detector, Electrical engineering, Process (computing), chemistry.chemical_element, Chip, chemistry, Hardware_INTEGRATEDCIRCUITS, Die (manufacturing), Wafer, business, Instrumentation, Quality assurance
Abstract

The APV25 is the 128 channel CMOS chip developed for readout of the silicon microstrip tracker in the CMS experiment at the CERN Large Hadron Collider. The detector is now under construction and will be the largest silicon microstrip system ever built, with ∼200 m 2 of silicon sensors. 75,000 chips are required to instrument the system, which must operate for 10 years in a high radiation environment with little or no possibility of replacement of any component. The readout chip is a crucial components, which must provide low noise and reliable operation. Thus, each readout chip must be carefully tested prior to installation in CMS modules and assurance of long-term performance of the readout electronics, especially verification of radiation tolerance, is highly desirable. This has been achieved by means of automated probe testing of every chip on the silicon wafers from the foundry, followed by studies of sample die to evaluate in more detail properties of the chips, which cannot easily be examined at the wafer level. During production, it was observed that the yield of good die varied unexpectedly from one production lot to another. This was investigated with significant help from the manufacturer and the process was optimised to ensure consistent high yield. A fraction of the dies, which successfully passed the wafer screening, are subjected to short-term X-ray irradiation to levels equivalent to that expected in CMS and are then annealed. Results are presented here and illustrate the excellent performance of APV25 under all expected operating conditions.

Published
2005
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20. Silicon diode radiation hardening for high energy physics detectors

Author

A.P. Litovchenko, I. Stavitski, A. Kaminski, J. Wyss, Devis Pantano, Dario Bisello, A. Candelori, and Riccardo Rando

Subjects
Physics, Nuclear reaction, Nuclear and High Energy Physics, Particle physics, Physics::Instrumentation and Detectors, Nuclear Theory, Substrate (electronics), Neutron radiation, Particle detector, Semiconductor detector, Neutron, Irradiation, Nuclear Experiment, Instrumentation, Radiation hardening
Abstract

We summarize in a general review all the studies performed by our group in the last years in the field of radiation hardening of silicon detectors for High Energy Physics experiments. Test structures (silicon p–i–n diodes) were irradiated by 16 MeV, 27 MeV, 34 MeV and 24 GeV protons, and by fast neutrons from a nuclear reactor and from the 9 Be(d,n) 10 B nuclear reaction. We will show that after proton irradiation the substrate oxygenation mitigates the depletion voltage increase rate b, which nevertheless presents a wide range of values if standard and oxygenated devices processed by different manufacturers are considered, pointing out that besides oxygenation, processing affects the diode radiation hardness in the case of proton irradiation. After neutron irradiation though the oxygen mitigating effect is strongly suppressed, nonetheless the b dependence on the particular process can be important.

Published
2003
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21. New evidence of dominant processing effects in standard and oxygenated silicon diodes after neutron irradiation

Author

Miguel Ullan, A. Candelori, A. Litovchenko, Dario Bisello, Riccardo Rando, Joaquin Santander, C. Martinez, A. Kaminski, Manuel Lozano, A. Moreno, Vladimir Cindro, J. Wyss, Joan Marc Rafi, Francesca Campabadal, and Luis Fonseca

Subjects
Physics, Nuclear and High Energy Physics, Silicon, business.industry, Annealing (metallurgy), technology, industry, and agriculture, Analytical chemistry, chemistry.chemical_element, Semiconductor device, Acceptor, chemistry, Neutron flux, Optoelectronics, Neutron, Irradiation, business, Instrumentation, Diode
Abstract

Silicon diodes processed on standard and oxygenated silicon substrates by three different manufacturers have been irradiated by neutrons in a nuclear reactor. The leakage current density ( J D ) increase is linear with the neutron fluence. J D and its annealing curve at 80°C do not present any sizeable dependence on substrate oxygenation and/or manufacturing process. The acceptor introduction rate ( β ) of the effective substrate doping concentration ( N eff ) is independent from the oxygen concentration when standard and oxygenated devices from the same manufacturer are considered. On the contrary, β significantly varies from one manufacturer to another showing that the β dependence on the particular process can be important, overtaking the small substrate oxygenation effect. Finally, the average saturation value of the N eff reverse annealing is slightly lower for the oxygenated samples, pointing out a positive effect of the substrate oxygenation even for devices irradiated by neutrons.

Published
2003
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22. Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact

Author

J. Wyss, A. Candelori, Francesco Iannuzzo, Francesco Velardi, and Giovanni Busatto

Subjects
Work (thermodynamics), Materials science, business.industry, Electrical engineering, Charge (physics), Hardware_PERFORMANCEANDRELIABILITY, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Ion, Hardware_GENERAL, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Electrical and Electronic Engineering, Power MOSFET, Current (fluid), Safety, Risk, Reliability and Quality, business, Low voltage, Electronic circuit, Voltage
Abstract

Even though low voltage MOSFETs are fairly intrinsically robust to SEB, the high current pulses that arise in certain charge generating mechanisms may lead to circuit malfunction. In this work, for the first time, the current pulses induced by ion impacts in new generation commercial power MOSFETs are characterized by a statistical analysis. This approach allows us to evidence the existence, in these devices, of two different charge generation mechanisms. Furthermore, the capability to easily quantify these phenomena provides useful information for the design of circuits using these MOSFETs. The pulse shape and the total charge generated by the impact of an energetic ion are studied in relation to the energy and species of the ion and the applied voltage between drain and source.

Published
2003
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23. Charge collection efficiency of standard and oxygenated silicon microstrip detectors

Author

Nicola Bacchetta, Dario Bisello, J. Wyss, Andrea Candelori, I. Stavitski, Riccardo Rando, and A. Kaminski

Subjects
Physics, Nuclear and High Energy Physics, Silicon, business.industry, Detector, chemistry.chemical_element, Substrate (electronics), Laser, law.invention, Wavelength, Optics, chemistry, law, Radiation damage, Optoelectronics, Irradiation, business, Instrumentation, Diode
Abstract

Two silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24 GeV protons to fluences ranging between 2.3 and 6.3×10 14 cm −2 . Charge collection efficiency measurements, performed by pulsing the detectors with a 1060 μ m wavelength laser, show that the beneficial effect of the oxygenation remains, although reduced with respect to that observed by C – V measurements on diodes fabricated with the detectors.

Published
2002
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24. Optimization of the silicon sensors for the CMS tracker

Author

Piero Giorgio Verdini, Giacomo Sguazzoni, M. Angarano, M. Giorgi, Marco Meschini, Giancarlo Mantovani, S. Braibant, A. Honkanen, Mika Huhtinen, A. Basti, Renato Potenza, A. Marchioro, E. Catacchini, M. Loreti, Fabrizio Palla, K. Luebelsmeyer, Stephen Watts, Geoffrey Hall, Donato Creanza, Alessandro Giassi, A. Papi, Josef Hrubec, B. Checcucci, G. Parrini, K. Freudenreich, A. K. Honma, Alessandro Paccagnella, Roberto Dell'Orso, D. Boemi, Nicola Bacchetta, Andrea Candelori, G. Segneri, A. Giraldo, V. Radicci, M.J. French, St. Koenig, Daniele Passeri, Mário Costa, A. Frey, Alessia Tricomi, Raffaello D'Alessandro, R. Siedling, Cristina Biino, Michel Raymond, Filippo Bosi, Chiara Mariotti, Carlo Civinini, A. Santocchia, Bruno Wittmer, Mara Bruzzi, Giovanna Selvaggi, Werner Lustermann, W.H. Gu, Ernesto Migliore, Marcello Mannelli, F. Rizzo, B. Surrow, S. Busoni, G. M. Bilei, Rino Castaldi, Andrea Castro, A. Kaminsky, A. Caner, M. De Palma, P. Tempesta, B. Mc Evoy, S. Piperov, D. Pandoulas, Z. Xie, A. Bader, M. Lenzi, L. Borello, G. Viertel, A. Fürtjes, Lucia Silvestris, A. Buffini, Natale Demaria, Li Yahong, Sebastiano Albergo, Maria Teresa Brunetti, E. Babucci, T. Tuuva, Marco Pieri, Salvatore My, P. Mättig, F. Raffaelli, G. Maggi, Manfred Krammer, U. Biggeri, Giuseppe Bagliesi, I. Stavitski, Luigi Fiore, Paolo Lariccia, Guido Tonelli, Alberto Messineo, Ettore Focardi, Horst Breuker, Jorma Tuominiemi, A. Starodumov, G. Favro, Veikko Karimäki, G. Martignon, Paolo Ciampolini, Markus Friedl, Dario Bisello, M. Pernicka, Suchandra Dutta, R. Hammarström, Andrea Neviani, Patrizia Azzi, Thomas Hebbeker, L. Servoli, and W. Glessing

Subjects
Radiation damage, Capacitances, High voltage stability, silicon strip detectors, Nuclear and High Energy Physics, Silicon detector, Radiation damager, capacitances, high voltage stability, Silicon, CMS, LHC, Particle tracking, chemistry.chemical_element, radiation damage, capacitances, high voltage stability, Irradiation, Instrumentation, Physics, Large Hadron Collider, business.industry, High voltage, chemistry, radiation damage, Optoelectronics, business
Abstract

The CMS experiment at the LHC will comprise a large silicon strip tracker. This article highlights some of the results obtained in the R&D studies for the optimization of its silicon sensors. Measurements of the capacitances and of the high voltage stability of the devices are presented before and after irradiation to the dose expected after the full lifetime of the tracker.

Published
2001
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25. New results on silicon microstrip detectors of CMS tracker

Author

Fabrizio Palla, G. Parrini, Paolo Ciampolini, Suchandra Dutta, P. Tempesta, M.J. French, St. Koenig, M. Huhtinen, Daniele Passeri, D. Pandoulas, Stephen Watts, A. Marchioro, Guido Tonelli, M. Lenzi, Alessandro Paccagnella, R. Della Marina, A. Fürtjes, A. Giraldo, Salvatore My, Nicola Bacchetta, Lutz Feld, Lucia Silvestris, Renato Potenza, D. Boemi, A. Papi, B. Schmitt, Mara Bruzzi, Sebastiano Albergo, S. Busoni, Ettore Focardi, M. Da Rold, G. M. Bilei, Chiara Mariotti, Giorgio Maggi, Andrea Castro, V. Radicci, Marcello Mannelli, C. Vannini, T. Tuuva, F. Raffaelli, R. Siedling, Marco Pieri, P. Mättig, Luigi Fiore, Giovanna Selvaggi, E. Catacchini, Werner Lustermann, M. Loreti, Ernesto Migliore, A. Santocchia, W.H. Gu, Anna Elliott-Peisert, Bruno Wittmer, Gino Bolla, G. Hall, K. Luebelsmeyer, Patrizia Azzi, I. Stavitski, Thomas Hebbeker, Laura Borrello, L. Servoli, B. Mc Evoy, Giuseppe Bagliesi, Filippo Bosi, C. Eklund, Veikko Karimäki, B. Glessing, B. Checcucci, A. Starodumov, Piero Giorgio Verdini, M. De Palma, M. Giorgi, Carlo Civinini, Dario Bisello, Giancarlo Mantovani, Z. Xie, G. Viertel, R. Hammerstrom, A. Bader, Manfred Krammer, Marco Meschini, U. Biggeri, Paolo Lariccia, Rino Castaldi, A. Caner, Donato Creanza, Alberto Messineo, Alessandro Giassi, Josef Hrubec, Horst Breuker, G. Martignon, Natale Demaria, Li Yahong, A. Buffini, A. Kaminsky, S. Piperov, S. Braibant, C. Bozzi, E. Babucci, G. Stefanini, K. Freudenreich, K. Skog, Roberto Dell'Orso, G. Favro, Andrea Candelori, Alessia Tricomi, Daniela Bortoletto, Giacomo Sguazzoni, M. Angarano, A. Basti, Raffaello D'Alessandro, and Michel Raymond

Subjects
Physics, Nuclear and High Energy Physics, Momentum (technical analysis), Silicon, CMS, business.industry, Detector, chemistry.chemical_element, silicon microstrip detectors, radiation damage, Substrate (electronics), Fluence, Capacitance, chemistry, Radiation damage, Optoelectronics, Irradiation, business, Instrumentation
Abstract

Interstrip and backplane capacitances on silicon microstrip detectors with p+ strip on n substrate of 320 μm thickness were measured for pitches between 60 and 240 μm and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4×10 14 protons / cm 2 of 24 GeV /c momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a 〈1 0 0〉 substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence of having a metal strip larger than the p+ implant has been studied and found to enhance the stability.

Published
2000
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26. Electron irradiation effects on thin MOS capacitors

Author

Andrea Candelori, Gabriella Ghidini, M. Ceschia, M. Cammarata, and Alessandro Paccagnella

Subjects
Condensed matter physics, Chemistry, Oxide, Electron, Trapping, Radiation, Condensed Matter Physics, Molecular physics, Electronic, Optical and Magnetic Materials, Ionizing radiation, law.invention, chemistry.chemical_compound, Capacitor, law, Materials Chemistry, Ceramics and Composites, Electron beam processing, Irradiation
Abstract

The charge trapping properties of 8 nm thick oxide layers of metal-oxide-semiconductor capacitors have been studied before and after 8 MeV electron irradiation as a function of the radiation dose. The positive charge induced by ionizing radiation increases with the radiation dose without saturation up to 20 Mrad(Si). It does not disappear at room temperature even 10 days after the irradiation, but it annihilates by recombination if electrons are injected into the oxide by Fowler–Nordheim tunneling. After the positive charge recombination, we have observed, by capacitance–voltage and current–voltage measurements, increased electron trapping in the irradiated oxides, due to the neutral traps generated by radiation. The negative trapped charge increases linearly with the radiation dose, and its centroid is close to the center of the oxide but shifted to the gate/SiO 2 interface. Finally, the oxide degradation of irradiated and unirradiated devices by constant current stress has been measured: differences between irradiated and unirradiated devices disappear for fluences larger than 10 19 electrons/cm 2 .

Published
1999
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27. Test results of heavily irradiated Si detectors

Author

D. Pandoulas, C. Bozzi, E. Babucci, Rino Castaldi, A. Caner, Raffaello D'Alessandro, Marco Meschini, Michel Raymond, Giacomo Sguazzoni, Lutz Feld, K. Skog, Roberto Dell'Orso, A. Basti, Andrea Candelori, Alessia Tricomi, A. Giraldo, M. Lenzi, B. Glessing, W.H. Gu, Paolo Ciampolini, J. Connotte, A. Starodumov, Lucia Silvestris, Sebastiano Albergo, G. Stefanini, D. Boemi, Marcello Mannelli, T. Tuuva, K. Freudenreich, F. Raffaelli, Giuseppe Bagliesi, G. M. Bilei, G. Viertel, Andrea Castro, Mika Huhtinen, Z. Xie, R. Hammerstrom, A. Bader, R. Della Marina, Marco Pieri, Fabrizio Palla, P. Bartalini, Bernd Schmitt, G. Raso, Paolo Lariccia, A. Marchioro, Anna Elliott-Peisert, Bruno Wittmer, R. Siedling, S. Piperov, Carlo Civinini, P. Tempesta, Dario Bisello, B. Mc Evoy, M. Da Rold, Mara Bruzzi, I. Stavitski, Horst Breuker, Veikko Karimäki, Y. Wang, Werner Lustermann, G. Martignon, Patrizia Azzi, L. Servoli, C. Eklund, Luigi Fiore, Giovanna Selvaggi, Alberto Messineo, K. Luebelsmeyer, Manfred Krammer, Geoffrey Hall, U. Biggeri, B. Checcucci, C. Vannini, E. Catacchini, M. Loreti, Renato Potenza, Guido Tonelli, Salvatore My, Ettore Focardi, M. De Palma, Giorgio Maggi, Stephen Watts, Donato Creanza, Alessandro Giassi, Josef Hrubec, G. Parrini, M.J. French, Laura Borrello, Daniele Passeri, Filippo Bosi, Piero Giorgio Verdini, Giancarlo Mantovani, Alessandro Paccagnella, and Nicola Bacchetta

Subjects
Physics, Nuclear and High Energy Physics, business.industry, Detector, High voltage, Substrate (electronics), Fluence, silicon microstrip detectors, radiation damage, Radiation damage, Optoelectronics, Irradiation, business, Instrumentation, Silicon microstrip detectors, Voltage
Abstract

A large use of silicon microstrip detectors is foreseen for the intermediate part of the CMS tracker. A specific research and development program has been carried out with the aim of finding design layouts and technological solutions for allowing silicon microstrip detectors to be reliably used on a high radiation level environment. As a result of this work single sided, AC-coupled, polysilicon biased, 300 μ m thick, p + on n substrate detectors were chosen. Irradiation tests have been performed on prototypes up to fluence 2×10 14 n/cm 2 . The detector performances do not significantly change if the detectors are biased well above the depletion voltage. S / N is reduced by less than 20%, still enough to insure a good efficiency and space resolution. Multiguard structures has been developed in order to reach high voltage operation (above 500 V).

Published
1999
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28. HSPICE simulations of Si microstrip detectors

Author

Alessandro Paccagnella, Nicola Bacchetta, Andrea Candelori, M. Da Rold, F. Nardi, and Dario Bisello

Subjects
Physics, Nuclear and High Energy Physics, Physics::Instrumentation and Detectors, business.industry, Capacitive sensing, Detector, STRIPS, Function (mathematics), Capacitance, law.invention, Radio propagation, law, Particle, Optoelectronics, Electronics, business, Instrumentation
Abstract

We report HSPICE simulation results of the signal propagation due to a minimum ionizing particle along the strips of single-sided microstrip detectors connected to the PreShape 32 read-out electronics. The capacitive detector parameter values have been determined as a function of the width/pitch ratio by using measured and calculated data which are available in literature. The strip load capacitance, i.e. the capacitance at the read-out electronics input due to the detector has been calculated by using HSPICE simulations. Different read-out configurations have been investigated.

Published
1998
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29. MOSFET parameter degradation after Fowler–Nordheim injection stress

Author

Alessandro Paccagnella, Andrea Candelori, E Gomiero, and Gabriella Ghidini

Subjects
Materials science, MOSFET, Electrical Stress, Fowler-Nordheim, business.industry, Transconductance, Electrical engineering, Oxide, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Flash memory, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Threshold voltage, Stress (mechanics), chemistry.chemical_compound, chemistry, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, EPROM, Safety, Risk, Reliability and Quality, business
Abstract

We have investigated the degradation of tunnel oxides due to Fowler–Nordheim electron injection from polysilicon gate. Tested devices are n-MOSFET normally used for Flash EPROM applications with four different technologies for the tunnel oxide layer. Stresses have been performed at different source and drain bias conditions for a total injected charge up to 1 C/cm 2 . The oxide characteristics and degradation have been determined comparing the MOSFET threshold voltage and transconductance peak for as received devices and after each stress step.

Published
1998
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32. Radiation defects in neutron irradiated silicon with high oxygen concentration

Author

A.P. Litovchenko, W. Wahl, G.G. Shmatko, J. Wyss, M. B. Pinkovska, A. A. Groza, V. I. Khivrich, M. I. Starchik, V. I. Varnina, P.G. Litovchenko, D. Bisello, L. A. Polivzev, and A. Candelori

Subjects
inorganic chemicals, Physics, Nuclear and High Energy Physics, Silicon, Annealing (metallurgy), technology, industry, and agriculture, Analytical chemistry, chemistry.chemical_element, Radiation, Oxygen, chemistry, Neutron flux, Limiting oxygen concentration, Neutron, Irradiation, Instrumentation
Abstract

In silicon material with oxygen concentration in the range (4–9)×10 17 cm −3 , grown by the CZ method and irradiated by reactor neutrons, the interstitial oxygen mainly participates in A-center (V+O) creation. A-center concentration is linearly dependent on neutron fluence up to Φ =10 18 n/cm 2 , value at which saturation occurs caused not by the exhaustion of dissolved oxygen but rather by vacancy-interstitial atom annihilation competitive mechanisms. A-center annealing ( T >300°C) does not lead to the full restoring of interstitial oxygen concentration. Repeating neutron irradiation and annealing causes a decrease of oxygen complex activity and the silicon behaves as a low-oxygen material.

Published
2003
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33. Radiation tests of single photon avalanche diode for space applications

Author

Moscatelli, Francesco, primary, Marisaldi, Martino, additional, Maccagnani, Piera, additional, Labanti, Claudio, additional, Fuschino, Fabio, additional, Prest, Michela, additional, Berra, Alessandro, additional, Bolognini, Davide, additional, Ghioni, Massimo, additional, Rech, Ivan, additional, Gulinatti, Angelo, additional, Giudice, Andrea, additional, Simmerle, Georg, additional, Candelori, Andrea, additional, Mattiazzo, Serena, additional, Sun, Xiaoli, additional, Cavanaugh, John F., additional, and Rubini, Danilo, additional

Published
2013
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34. Lithium ion-induced damage in silicon detectors

Author

Andrea Candelori, Manuel Lozano, Miguel Ullan, Piero Giubilato, A. Kaminski, Riccardo Rando, A. Litovchenko, J. Wyss, and Dario Bisello

Subjects
Physics, Nuclear and High Energy Physics, Proton, Silicon, Physics::Instrumentation and Detectors, business.industry, Analytical chemistry, chemistry.chemical_element, Space charge, Particle detector, Ion, chemistry, Radiation damage, Optoelectronics, Irradiation, Nuclear Experiment, business, Instrumentation, Radiation hardening
Abstract

Silicon diodes processed by CNM on standard and oxygenated silicon substrates have been irradiated by 58 MeV lithium ions. The radiation-induced effects are very similar to the one observed after proton irradiation: substrate space charge sign inversion (SCSI), lower increase of the effective substrate doping concentration after SCSI for the oxygenated devices. The experimental radiation hardness factor has been determined to be 45.01, within 8.2% with the expected value. These results suggest that 58 MeV Li ions are a suitable radiation source for radiation hardness studies by ions heavier than protons for the future very high luminosity hadron colliders.

Published
2004
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36. Silicon detectors for the sLHC

Author

Affolder, A., primary, Aleev, A., additional, Allport, P.P., additional, Andricek, L., additional, Artuso, M., additional, Balbuena, J.P., additional, Barabash, L., additional, Barber, T., additional, Barcz, A., additional, Bassignana, D., additional, Bates, R., additional, Battaglia, M., additional, Beimforde, M., additional, Bernardini, J., additional, Betancourt, C., additional, Bilei, G.M., additional, Bisello, D., additional, Blue, A., additional, Bohm, J., additional, Bolla, G., additional, Borgia, A., additional, Borrello, L., additional, Bortoletto, D., additional, Boscardin, M., additional, Bosma, M.J., additional, Bowcock, T.J.V., additional, Breindl, M., additional, Broz, J., additional, Bruzzi, M., additional, Brzozowski, A., additional, Buhmann, P., additional, Buttar, C., additional, Campabadal, F., additional, Candelori, A., additional, Casse, G., additional, Charron, S., additional, Chren, D., additional, Cihangir, S., additional, Cindro, V., additional, Collins, P., additional, Cortina Gil, E., additional, Costinoaia, C.A., additional, Creanza, D., additional, Cristobal, C., additional, Dalla Betta, G.-F., additional, de Boer, W., additional, De Palma, M., additional, Demina, R., additional, Dierlamm, A., additional, Díez, S., additional, Dobos, D., additional, Doherty, F., additional, Dolenc Kittelmann, I., additional, Dolezal, Z., additional, Dolgolenko, A., additional, Dragoi, C., additional, Driewer, A., additional, Dutta, S., additional, Eckstein, D., additional, Eklund, L., additional, Eremin, I., additional, Eremin, V., additional, Erfle, J., additional, Fadeeva, N., additional, Fahrer, M., additional, Fiori, F., additional, Fleta, C., additional, Focardi, E., additional, Forshaw, D., additional, Fretwurst, E., additional, Frey, M., additional, Bates, A.G., additional, Gallrapp, C., additional, Garcia, C., additional, Gaubas, E., additional, Genest, M.-H., additional, Giolo, K., additional, Glaser, M., additional, Goessling, C., additional, Golubev, A., additional, Gorelov, I., additional, Grégoire, G., additional, Gregori, P., additional, Grigoriev, E., additional, Grillo, A.A., additional, Grinstein, S., additional, Groza, A., additional, Guskov, J., additional, Hansen, T.E., additional, Härkönen, J., additional, Hartjes, F.G., additional, Hartmann, F., additional, Hoeferkamp, M., additional, Horisberger, R., additional, Houdayer, A., additional, Hynds, D., additional, Ilyashenko, I., additional, Junkes, A., additional, Kadys, A., additional, Kaminski, P., additional, Karpenko, A., additional, Kaska, K., additional, Kazuchits, N., additional, Kazukauskas, V., additional, Kharchuk, A., additional, Khivrich, V., additional, Kierstead, J., additional, Klanner, R., additional, Klingenberg, R., additional, Kodys, P., additional, Koffeman, E., additional, Köhler, M., additional, Kohout, Z., additional, Korjenevski, S., additional, Korolkov, I., additional, Kozlowski, R., additional, Kozubal, M., additional, Kramberger, G., additional, Kühn, S., additional, Kuleshov, S., additional, Kuznetsov, A., additional, Kwan, S., additional, La Rosa, A., additional, Lacasta, C., additional, Lange, J., additional, Lassila-Perini, K., additional, Lastovetsky, V., additional, Lazanu, I., additional, Lazanu, S., additional, Lebel, C., additional, Lefeuvre, G., additional, Lemaitre, V., additional, Leroy, C., additional, Li, Z., additional, Lindström, G., additional, Litovchenko, A., additional, Litovchenko, P., additional, Lozano, M., additional, Luczynski, Z., additional, Luukka, P., additional, Macchiolo, A., additional, Macraighne, A., additional, Mäenpää, T., additional, Makarenko, L.F., additional, Mandic, I., additional, Maneuski, D., additional, Manna, N., additional, Marco, R., additional, Marti i Garcia, S., additional, Marunko, S., additional, Masek, P., additional, Mathieson, K., additional, Matysek, M., additional, Mekki, J., additional, Messineo, A., additional, Metcalfe, J., additional, Mikestikova, M., additional, Mikuž, M., additional, Militaru, O., additional, Minano, M., additional, Miyamoto, J., additional, Moll, M., additional, Monokhov, E., additional, Mori, R., additional, Moser, H.-G., additional, Muenstermann, D., additional, Munoz Sanchez, F.J., additional, Naletko, A., additional, Nisius, R., additional, OShea, V., additional, Pacifico, N., additional, Pantano, D., additional, Parkes, C., additional, Parzefall, U., additional, Passeri, D., additional, Pawlowski, M., additional, Pellegrini, G., additional, Pernegger, H., additional, Petasecca, M., additional, Piemonte, C., additional, Pignatel, G.U., additional, Pintilie, I., additional, Pintilie, L., additional, Piotrzkowski, K., additional, Placekett, R., additional, Pöhlsen, Th., additional, Polivtsev, L., additional, Popule, J., additional, Pospisil, S., additional, Preiss, J., additional, Radicci, V., additional, Radu, R., additional, Raf, J.M., additional, Rando, R., additional, Richter, R., additional, Roeder, R., additional, Roger, R., additional, Rogozhkin, S., additional, Rohe, T., additional, Ronchin, S., additional, Rott, C., additional, Roy, A., additional, Rummler, A., additional, Ruzin, A., additional, Sadrozinski, H.F.W., additional, Sakalauskas, S., additional, Samadashvili, N., additional, Scaringella, M., additional, Schumm, B., additional, Seidel, S., additional, Seiden, A., additional, Shipsey, I., additional, Sibille, J., additional, Sicho, P., additional, Slavicek, T., additional, Solar, M., additional, Soldevila-Serrano, U., additional, Son, S., additional, Sopko, V., additional, Sopko, B., additional, Spencer, N., additional, Spiegel, L., additional, Srivastava, A., additional, Steinbrueck, G., additional, Stewart, G., additional, Stolze, D., additional, Storasta, J., additional, Surma, B., additional, Svensson, B.G., additional, Tan, P., additional, Tomasek, M., additional, Toms, K., additional, Tsiskaridze, S., additional, Tsvetkov, A., additional, Tuboltsev, Yu., additional, Tuominen, E., additional, Tuovinen, E., additional, Tuuva, T., additional, Tylchin, M., additional, Uebersee, H., additional, Ullán, M., additional, Vaitkus, J.V., additional, van Beuzekom, M., additional, Verbitskaya, E., additional, Vila Alvarez, I., additional, Visser, J., additional, Vossebeld, J., additional, Vrba, V., additional, Walz, M., additional, Weigell, P., additional, Wiik, L., additional, Wilhelm, I., additional, Wunstorf, R., additional, Zaluzhny, A., additional, Zavrtanik, M., additional, Zelazko, J., additional, Zen, M., additional, Zhukov, V., additional, Zontar, D., additional, and Zorzi, N., additional

Published
2011
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39. Giant Leiomyomatous Hamartoma of the Tongue

Author

de Faria, Paulo Rogério, primary, Batista, Jonas Dantas, additional, Duriguetto, Antônio Francisco, additional, do Nascimento Souza, Kelen Christine, additional, Candelori, Ignez, additional, Cardoso, Sérgio Vitorino, additional, and Loyola, Adriano Mota, additional

Published
2008
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45. Radiation hardness of silicon detectors based on pre-irradiated silicon

Author

Litovchenko, P.G., primary, Groza, A.A., additional, Lastovetsky, V.F., additional, Barabash, L.I., additional, Starchik, M.I., additional, Dubovoy, V.K., additional, Bisello, D., additional, Giubilato, P., additional, Candelori, A., additional, Rando, R., additional, Litovchenko, A.P., additional, Khomenkov, V., additional, Wahl, W., additional, Boscardin, M., additional, Zorzi, N., additional, Dalla Betta, G.-F., additional, Cindro, V., additional, Mikelsen, M., additional, Monakhov, E.V., additional, and Svensson, B.G., additional

Published
2006
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46. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

Author

Fretwurst, E., primary, Adey, J., additional, Al-Ajili, A., additional, Alfieri, G., additional, Allport, P.P., additional, Artuso, M., additional, Assouak, S., additional, Avset, B.S., additional, Barabash, L., additional, Barcz, A., additional, Bates, R., additional, Biagi, S.F., additional, Bilei, G.M., additional, Bisello, D., additional, Blue, A., additional, Blumenau, A., additional, Boisvert, V., additional, Bolla, G., additional, Bondarenko, G., additional, Borchi, E., additional, Borrello, L., additional, Bortoletto, D., additional, Boscardin, M., additional, Bosisio, L., additional, Bowcock, T.J.V., additional, Brodbeck, T.J., additional, Broz, J., additional, Bruzzi, M., additional, Brzozowski, A., additional, Buda, M., additional, Buhmann, P., additional, Buttar, C., additional, Campabadal, F., additional, Campbell, D., additional, Candelori, A., additional, Casse, G., additional, Cavallini, A., additional, Charron, S., additional, Chilingarov, A., additional, Chren, D., additional, Cindro, V., additional, Collins, P., additional, Coluccia, R., additional, Contarato, D., additional, Coutinho, J., additional, Creanza, D., additional, Cunningham, L., additional, Dalla Betta, G.-F., additional, Dawson, I., additional, de Boer, W., additional, De Palma, M., additional, Demina, R., additional, Dervan, P., additional, Dittongo, S., additional, Dolezal, Z., additional, Dolgolenko, A., additional, Eberlein, T., additional, Eremin, V., additional, Fall, C., additional, Fasolo, F., additional, Ferbel, T., additional, Fizzotti, F., additional, Fleta, C., additional, Focardi, E., additional, Forton, E., additional, Garcia, C., additional, Garcia-Navarro, J.E., additional, Gaubas, E., additional, Genest, M.-H., additional, Gill, K.A., additional, Giolo, K., additional, Glaser, M., additional, Goessling, C., additional, Golovine, V., additional, González Sevilla, S., additional, Gorelov, I., additional, Goss, J., additional, Gouldwell Bates, A., additional, Grégoire, G., additional, Gregori, P., additional, Grigoriev, E., additional, Grillo, A.A., additional, Groza, A., additional, Guskov, J., additional, Haddad, L., additional, Härkönen, J., additional, Hauler, F., additional, Hoeferkamp, M., additional, Hönniger, F., additional, Horazdovsky, T., additional, Horisberger, R., additional, Horn, M., additional, Houdayer, A., additional, Hourahine, B., additional, Hughes, G., additional, Ilyashenko, I., additional, Irmscher, K., additional, Ivanov, A., additional, Jarasiunas, K., additional, Johansen, K.M.H., additional, Jones, B.K., additional, Jones, R., additional, Joram, C., additional, Jungermann, L., additional, Kalinina, E., additional, Kaminski, P., additional, Karpenko, A., additional, Karpov, A., additional, Kazlauskiene, V., additional, Kazukauskas, V., additional, Khivrich, V., additional, Khomenkov, V., additional, Kierstead, J., additional, Klaiber-Lodewigs, J., additional, Klingenberg, R., additional, Kodys, P., additional, Kohout, Z., additional, Korjenevski, S., additional, Koski, M., additional, Kozlowski, R., additional, Kozodaev, M., additional, Kramberger, G., additional, Krasel, O., additional, Kuznetsov, A., additional, Kwan, S., additional, Lagomarsino, S., additional, Lassila-Perini, K., additional, Lastovetsky, V., additional, Latino, G., additional, Lazanu, I., additional, Lazanu, S., additional, Lebedev, A., additional, Lebel, C., additional, Leinonen, K., additional, Leroy, C., additional, Li, Z., additional, Lindström, G., additional, Linhart, V., additional, Litovchenko, P., additional, Litovchenko, A., additional, Lo Giudice, A., additional, Lozano, M., additional, Luczynski, Z., additional, Luukka, P., additional, Macchiolo, A., additional, Makarenko, L.F., additional, Mandić, I., additional, Manfredotti, C., additional, Manna, N., additional, Marti i Garcia, S., additional, Marunko, S., additional, Mathieson, K., additional, Melone, J., additional, Menichelli, D., additional, Messineo, A., additional, Metcalfe, J., additional, Miglio, S., additional, Mikuž, M., additional, Miyamoto, J., additional, Moll, M., additional, Monakhov, E., additional, Moscatelli, F., additional, Naoumov, D., additional, Nossarzewska-Orlowska, E., additional, Nysten, J., additional, Olivero, P., additional, Oshea, V., additional, Palviainen, T., additional, Paolini, C., additional, Parkes, C., additional, Passeri, D., additional, Pein, U., additional, Pellegrini, G., additional, Perera, L., additional, Petasecca, M., additional, Piemonte, C., additional, Pignatel, G.U., additional, Pinho, N., additional, Pintilie, I., additional, Pintilie, L., additional, Polivtsev, L., additional, Polozov, P., additional, Popa, A., additional, Popule, J., additional, Pospisil, S., additional, Pozza, A., additional, Radicci, V., additional, Rafí, J.M., additional, Rando, R., additional, Roeder, R., additional, Rohe, T., additional, Ronchin, S., additional, Rott, C., additional, Roy, A., additional, Ruzin, A., additional, Sadrozinski, H.F.W., additional, Sakalauskas, S., additional, Scaringella, M., additional, Schiavulli, L., additional, Schnetzer, S., additional, Schumm, B., additional, Sciortino, S., additional, Scorzoni, A., additional, Segneri, G., additional, Seidel, S., additional, Seiden, A., additional, Sellberg, G., additional, Sellin, P., additional, Sentenac, D., additional, Shipsey, I., additional, Sicho, P., additional, Sloan, T., additional, Solar, M., additional, Son, S., additional, Sopko, B., additional, Sopko, V., additional, Spencer, N., additional, Stahl, J., additional, Stolze, D., additional, Stone, R., additional, Storasta, J., additional, Strokan, N., additional, Sudzius, M., additional, Surma, B., additional, Suvorov, A., additional, Svensson, B.G., additional, Tipton, P., additional, Tomasek, M., additional, Tsvetkov, A., additional, Tuominen, E., additional, Tuovinen, E., additional, Tuuva, T., additional, Tylchin, M., additional, Uebersee, H., additional, Uher, J., additional, Ullán, M., additional, Vaitkus, J.V., additional, Velthuis, J., additional, Verbitskaya, E., additional, Vrba, V., additional, Wagner, G., additional, Wilhelm, I., additional, Worm, S., additional, Wright, V., additional, Wunstorf, R., additional, Yiuri, Y., additional, Zabierowski, P., additional, Zaluzhny, A., additional, Zavrtanik, M., additional, Zen, M., additional, Zhukov, V., additional, and Zorzi, N., additional

Published
2005
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47. Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

Author

Bruzzi, M., primary, Bisello, D., additional, Borrello, L., additional, Borchi, E., additional, Boscardin, M., additional, Candelori, A., additional, Creanza, D., additional, Dalla Betta, G.-F., additional, DePalma, M., additional, Dittongo, S., additional, Focardi, E., additional, Khomenkov, V., additional, Litovchenko, A., additional, Macchiolo, A., additional, Manna, N., additional, Menichelli, D., additional, Messineo, A., additional, Miglio, S., additional, Petasecca, M., additional, Piemonte, C., additional, Pignatel, G.U., additional, Radicci, V., additional, Ronchin, S., additional, Scaringella, M., additional, Segneri, G., additional, Sentenac, D., additional, Tosi, C., additional, and Zorzi, N., additional

Published
2005
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48. Development of radiation tolerant semiconductor detectors for the Super-LHC

Author

Moll, M., primary, Adey, J., additional, Al-Ajili, A., additional, Alfieri, G., additional, Allport, P.P., additional, Artuso, M., additional, Assouak, S., additional, Avset, B.S., additional, Barabash, L., additional, Barcz, A., additional, Bates, R., additional, Biagi, S.F., additional, Bilei, G.M., additional, Bisello, D., additional, Blue, A., additional, Blumenau, A., additional, Boisvert, V., additional, Bolla, G., additional, Bondarenko, G., additional, Borchi, E., additional, Borrello, L., additional, Bortoletto, D., additional, Boscardin, M., additional, Bosisio, L., additional, Bowcock, T.J.V., additional, Brodbeck, T.J., additional, Broz, J., additional, Bruzzi, M., additional, Brzozowski, A., additional, Buda, M., additional, Buhmann, P., additional, Buttar, C., additional, Campabadal, F., additional, Campbell, D., additional, Candelori, A., additional, Casse, G., additional, Cavallini, A., additional, Charron, S., additional, Chilingarov, A., additional, Chren, D., additional, Cindro, V., additional, Collins, P., additional, Coluccia, R., additional, Contarato, D., additional, Coutinho, J., additional, Creanza, D., additional, Cunningham, W., additional, Dalla Betta, G. -F., additional, Dawson, I., additional, de Boer, W., additional, De Palma, M., additional, Demina, R., additional, Dervan, P., additional, Dittongo, S., additional, Dolezal, Z., additional, Dolgolenko, A., additional, Eberlein, T., additional, Eremin, V., additional, Fall, C., additional, Fasolo, F., additional, Fizzotti, F., additional, Fleta, C., additional, Focardi, E., additional, Forton, E., additional, Fretwurst, E., additional, Garcia, C., additional, Garcia-Navarro, J.E., additional, Gaubas, E., additional, Genest, M. -H., additional, Gill, K.A., additional, Giolo, K., additional, Glaser, M., additional, Goessling, C., additional, Golovine, V., additional, González Sevilla, S., additional, Gorelov, I., additional, Goss, J., additional, Gouldwell Bates, A., additional, Grégoire, G., additional, Gregori, P., additional, Grigoriev, E., additional, Grillo, A.A., additional, Groza, A., additional, Guskov, J., additional, Haddad, L., additional, Härkönen, J., additional, Hauler, F., additional, Hoeferkamp, M., additional, Hönniger, F., additional, Horazdovsky, T., additional, Horisberger, R., additional, Horn, M., additional, Houdayer, A., additional, Hourahine, B., additional, Hughes, G., additional, Ilyashenko, I., additional, Irmscher, K., additional, Ivanov, A., additional, Jarasiunas, K., additional, Johansen, K.M.H., additional, Jones, B.K., additional, Jones, R., additional, Joram, C., additional, Jungermann, L., additional, Kalinina, E., additional, Kaminski, P., additional, Karpenko, A., additional, Karpov, A., additional, Kazlauskiene, V., additional, Kazukauskas, V., additional, Khivrich, V., additional, Khomenkov, V., additional, Kierstead, J., additional, Klaiber-Lodewigs, J., additional, Klingenberg, R., additional, Kodys, P., additional, Kohout, Z., additional, Korjenevski, S., additional, Koski, M., additional, Kozlowski, R., additional, Kozodaev, M., additional, Kramberger, G., additional, Krasel, O., additional, Kuznetsov, A., additional, Kwan, S., additional, Lagomarsino, S., additional, Lassila-Perini, K., additional, Lastovetsky, V., additional, Latino, G., additional, Lazanu, S., additional, Lazanu, I., additional, Lebedev, A., additional, Lebel, C., additional, Leinonen, K., additional, Leroy, C., additional, Li, Z., additional, Lindström, G., additional, Linhart, V., additional, Litovchenko, A., additional, Litovchenko, P., additional, Lo Giudice, A., additional, Lozano, M., additional, Luczynski, Z., additional, Luukka, P., additional, Macchiolo, A., additional, Makarenko, L.F., additional, Mandić, I., additional, Manfredotti, C., additional, Manna, N., additional, Marti i Garcia, S., additional, Marunko, S., additional, Mathieson, K., additional, Melone, J., additional, Menichelli, D., additional, Messineo, A., additional, Metcalfe, J., additional, Miglio, S., additional, Mikuž, M., additional, Miyamoto, J., additional, Monakhov, E., additional, Moscatelli, F., additional, Naoumov, D., additional, Nossarzewska-Orlowska, E., additional, Nysten, J., additional, Olivero, P., additional, OShea, V., additional, Palviainen, T., additional, Paolini, C., additional, Parkes, C., additional, Passeri, D., additional, Pein, U., additional, Pellegrini, G., additional, Perera, L., additional, Petasecca, M., additional, Piemonte, C., additional, Pignatel, G.U., additional, Pinho, N., additional, Pintilie, I., additional, Pintilie, L., additional, Polivtsev, L., additional, Polozov, P., additional, Popa, A., additional, Popule, J., additional, Pospisil, S., additional, Pozza, A., additional, Radicci, V., additional, Rafí, J.M., additional, Rando, R., additional, Roeder, R., additional, Rohe, T., additional, Ronchin, S., additional, Rott, C., additional, Roy, A., additional, Ruzin, A., additional, Sadrozinski, H.F.W., additional, Sakalauskas, S., additional, Scaringella, M., additional, Schiavulli, L., additional, Schnetzer, S., additional, Schumm, B., additional, Sciortino, S., additional, Scorzoni, A., additional, Segneri, G., additional, Seidel, S., additional, Seiden, A., additional, Sellberg, G., additional, Sellin, P., additional, Sentenac, D., additional, Shipsey, I., additional, Sicho, P., additional, Sloan, T., additional, Solar, M., additional, Son, S., additional, Sopko, B., additional, Sopko, V., additional, Spencer, N., additional, Stahl, J., additional, Stolze, D., additional, Stone, R., additional, Storasta, J., additional, Strokan, N., additional, Sudzius, M., additional, Surma, B., additional, Suvorov, A., additional, Svensson, B.G., additional, Tipton, P., additional, Tomasek, M., additional, Tsvetkov, A., additional, Tuominen, E., additional, Tuovinen, E., additional, Tuuva, T., additional, Tylchin, M., additional, Uebersee, H., additional, Uher, J., additional, Ullán, M., additional, Vaitkus, J.V., additional, Velthuis, J., additional, Verbitskaya, E., additional, Vrba, V., additional, Wagner, G., additional, Wilhelm, I., additional, Worm, S., additional, Wright, V., additional, Wunstorf, R., additional, Yiuri, Y., additional, Zabierowski, P., additional, Zaluzhny, A., additional, Zavrtanik, M., additional, Zen, M., additional, Zhukov, V., additional, and Zorzi, N., additional

Published
2005
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49. The effect of highly ionising particles on the CMS silicon strip tracker

Author

Adam, W., primary, Bergauer, T., additional, Friedl, M., additional, Fruehwirth, R., additional, Hrubec, J., additional, Krammer, M., additional, Pernicka, M., additional, Waltenberger, W., additional, Beaumont, W., additional, de Langhe, E., additional, de Wolf, E., additional, Tasevsky, M., additional, Bouhali, O., additional, Clerbaux, B., additional, de Lentdecker, G., additional, Dewulf, J.-P., additional, Neuckermans, L., additional, Vander-Velde, C., additional, Vanlaer, P., additional, Wickens, J., additional, D’Hondt, J., additional, Goorens, R., additional, Heyninck, J., additional, Lowette, S., additional, Tavernier, S., additional, Van Lancker, L., additional, Yu, C., additional, Assouak, S., additional, Bonnet, J.-L., additional, Bruno, G., additional, De-Callatay, B., additional, De-Favereau-de-Jeneret, J., additional, Delaere, C., additional, De-Visscher, S., additional, Favart, D., additional, Gregoire, G., additional, Keutgen, Th., additional, Leibenguth, G., additional, Lemaitre, V., additional, Michotte, D., additional, Militaru, O., additional, Ninane, A., additional, Ovyn, S., additional, Piotrzkowski, K., additional, Roberfroid, V., additional, Rouby, X., additional, Van-der-Aa, O., additional, Vander-Donckt, M., additional, Boulogne, I., additional, Daubie, E., additional, Defontaines, F., additional, Herquet, P., additional, Czellar, S., additional, Härkönen, J., additional, Karimäki, V., additional, Katajisto, H., additional, Linden, T., additional, Luukka, P., additional, Lampen, T., additional, Mäenpää, T., additional, Tuominen, E., additional, Tuominiemi, J., additional, Tuuva, T., additional, Ageron, M., additional, Chabanat, E., additional, Contardo, D., additional, Estre, N., additional, Haroutunian, R., additional, Lumb, N., additional, Mirabito, L., additional, Perries, S., additional, Trocme, B., additional, Blaes, R., additional, Charles, F., additional, Drouhin, F., additional, Ernenwein, J.P., additional, Fontaine, J.C., additional, Berst, J.D., additional, Brom, J.M., additional, Didierjean, F., additional, Goerlach, U., additional, Gross, L., additional, Juillot, P., additional, Lounis, A., additional, Maazouzi, C., additional, Olivetto, C., additional, Strub, R., additional, Vanhove, P., additional, Vintache, D., additional, Adolphi, R., additional, Brauer, R., additional, Braunschweig, W., additional, Esser, H., additional, Feld, L., additional, Heister, A., additional, Karpinski, W., additional, Klein, K., additional, König, S., additional, Kukulies, C., additional, Olzem, J., additional, Ostaptchouk, A., additional, Pandoulas, D., additional, Pierschel, G., additional, Raupach, F., additional, Schael, S., additional, Schultz von Dratzig, A., additional, Schwering, G., additional, Siedling, R., additional, Thomas, M., additional, Wlochal, M., additional, Beissel, F., additional, Boffin, K.-D., additional, Duda, M., additional, Flossdorf, A., additional, Flugge, G., additional, Franke, T., additional, Hangarter, K., additional, Hegner, B., additional, Hermanns, Th., additional, Kasselmann, S., additional, Kress, Th., additional, Linn, A., additional, Mnich, J., additional, Nowack, A., additional, Poettgens, M., additional, Pooth, O., additional, Reinhold, B., additional, Bleyl, M., additional, Holm, U., additional, Klanner, R., additional, Pein, U., additional, Schleper, P., additional, Schirm, N., additional, Steinbrück, G., additional, Stoye, M., additional, Tesch, S., additional, van Staa, R., additional, Wick, K., additional, Atz, B., additional, Barvich, T., additional, Blum, P., additional, de Boer, W., additional, Boegelspacher, F., additional, Dirkes, G., additional, Fahrer, M., additional, Fernandez, J., additional, Frey, M., additional, Furgeri, A., additional, Grigoriev, E., additional, Hartmann, F., additional, Heier, S., additional, Muller, T., additional, Ortega-Gomez, T., additional, Simonis, H.-J., additional, Steck, P., additional, Theel, A., additional, Weiler, T., additional, Zhukov, V., additional, Creanza, D., additional, De Filippis, N., additional, de Palma, M., additional, De Robertis, G., additional, Fiore, L., additional, Giordano, D., additional, Maggi, G., additional, Mennea, M., additional, My, S., additional, Radicci, V., additional, Selvaggi, G., additional, Silvestris, L., additional, Tempesta, P., additional, Zito, G., additional, Albergo, S., additional, Bellini, V., additional, Chiorboli, M., additional, Costa, S., additional, Potenza, R., additional, Sutera, C., additional, Tricomi, A., additional, Tuvè, C., additional, Bocci, A., additional, Ciulli, V., additional, Civinini, C., additional, D’Alessandro, R., additional, Focardi, E., additional, Landi, G., additional, Macchiolo, A., additional, Magini, N., additional, Mersi, S., additional, Marchettini, C., additional, Meschini, M., additional, Paoletti, S., additional, Parrini, G., additional, Ranieri, R., additional, Sani, M., additional, Bacchetta, N., additional, Bisello, D., additional, Candelori, A., additional, Dorigo, T., additional, Giubilato, P., additional, Kaminsky, A., additional, Loreti, M., additional, Nigro, M., additional, Paccagnella, A., additional, Rando, R., additional, Angarano, M.M., additional, Babucci, E., additional, Benedetti, D., additional, Biasini, M., additional, Bilei, G.M., additional, Brunetti, M.T., additional, Checcucci, B., additional, Dinu, N., additional, Fanò, L., additional, Giorgi, M., additional, Lariccia, P., additional, Mantovani, G., additional, Postolache, V., additional, Puscalau, M., additional, Ricci, D., additional, Santinelli, R., additional, Santocchia, A., additional, Servoli, L., additional, Zucchetti, C., additional, Azzurri, P., additional, Bagliesi, G., additional, Basti, A., additional, Bernardini, J., additional, Boccali, T., additional, Borrello, L., additional, Bosi, F., additional, Castaldi, R., additional, D’Alfonso, M., additional, Dell’Orso, R., additional, Dutta, S., additional, Foa, L., additional, Gennai, S., additional, Giammanco, A., additional, Giassi, A., additional, Lomtadze, T., additional, Mangano, B., additional, Messineo, A., additional, Moggi, A., additional, Palla, F., additional, Palmonari, F., additional, Raffaelli, F., additional, Rizzi, A., additional, Rizzi, D., additional, Segneri, G., additional, Sentenac, D., additional, Sguazzoni, G., additional, Spagnolo, P., additional, Tonelli, G., additional, Verdini, P.G., additional, Biino, C., additional, Costa, M., additional, Demaria, N., additional, Favro, G., additional, Trapani, P., additional, Peroni, C., additional, Romero, A., additional, Migliore, E., additional, Abbaneo, D., additional, Ahmed, F., additional, Bartalini, P., additional, Bernardino-Rodriguez, N., additional, Breuker, H., additional, Buchmuller, O., additional, Carrone, E., additional, Cattai, A., additional, Chierici, R., additional, Cucciarelli, S., additional, Dierlamm, A., additional, Eppard, M., additional, Frey, A., additional, Gill, K., additional, Grabit, R., additional, Honma, A., additional, Huhtinen, M., additional, Magazzu, G., additional, Mannelli, M., additional, Marchioro, A., additional, Onnela, A., additional, Perea-Solano, B., additional, Petagna, P., additional, Postema, H., additional, Risoldi, M., additional, Rolandi, G., additional, Siegrist, P., additional, Troska, I., additional, Tsirou, A., additional, Vasey, F., additional, Weber, M., additional, Wittmer, B., additional, Bertl, W., additional, Gabathuler, K., additional, Horisberger, R., additional, Kästli, H.-Ch., additional, Kotlinski, D., additional, MacPherson, A., additional, Rohe, T., additional, Freudenreich, K., additional, Lustermann, W., additional, Pauss, F., additional, Eichler, R., additional, Erdmann, W., additional, Grab, C., additional, Schoning, A., additional, Amsler, C., additional, Chiochia, V., additional, Dorokhov, A., additional, Hörmann, C., additional, Pruys, H., additional, Prokofiev, K., additional, Regenfus, C., additional, Robmann, P., additional, Speer, T., additional, Bell, K.W., additional, Coughlan, J., additional, French, M., additional, Halsall, R., additional, Jones, L., additional, Pearson, M., additional, Rogers, G., additional, Tomalin, I., additional, Bainbridge, R., additional, Barrillon, P., additional, Colling, D., additional, Dris, S., additional, Foudas, C., additional, Fulcher, J., additional, Hall, G., additional, Iles, G., additional, Jones, J., additional, Leaver, J., additional, Macevoy, B.C., additional, Noy, M., additional, Raymond, D.M., additional, Takahashi, M., additional, Zorba, O., additional, Barnett, B., additional, Chien, C.-Y., additional, Kim, D.W., additional, Liang, G., additional, Swartz, M., additional, Atac, M., additional, Demarteau, M., additional, Joshi, U., additional, Kwan, S., additional, Spiegel, L., additional, Tkaczyk, S., additional, Gerber, C.E., additional, Shabalina, E., additional, Ten, T., additional, Lander, R., additional, Pellett, D., additional, Gobbi, B., additional, Kubantsev, M., additional, Malik, S., additional, Tilden, R., additional, Baringer, P., additional, Bean, A., additional, Christofek, L., additional, Coppage, D., additional, Bolton, T.A., additional, Demina, R., additional, Kahl, W.E., additional, Khanov, A., additional, Korjenevski, S., additional, Pukhaeva, N., additional, Reay, N.W., additional, Rizatdinova, F., additional, Sidwell, R.A., additional, Stanton, N.R., additional, Cremaldi, L., additional, Sanders, D., additional, Bartz, E., additional, Doroshenko, J., additional, Koeth, T., additional, Perera, L., additional, Schnetzer, S., additional, Stone, R., additional, Worm, S., additional, Gartung, P., additional, Hanson, G.G., additional, Jeng, G.Y., additional, Páztor, G., additional, Eusebi, R., additional, Halkiadakis, E., additional, Hocker, A., additional, Tipton, P., additional, Affolder, A., additional, Campagnari, C., additional, Hale, D., additional, Incandela, J., additional, Kyre, S., additional, Lamb, J., additional, Taylor, R., additional, White, D., additional, Bolla, G., additional, Bortoletto, D., additional, Garfinkel, A., additional, Rott, C., additional, and Roy, A., additional

Published
2005
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