21 results on '"Agarwal, Anant"'
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2. Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs
3. JFET Region Design Trade-Offs of 650 V 4H-SiC Planar Power MOSFETs
4. Mitigating Recessions: Incorporating Macroeconomic Levers into Bankruptcy Law in India
5. The benefits and current progress of SiC SGTOs for pulsed power applications
6. Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors
7. Effect of crystallographic defects on the reverse performance of 4H–SiC JBS diodes
8. 4H–SiC BJTs with current gain of 110
9. dV/dt effect in high-voltage (1.5kV) 4H–SiC thyristors
10. On the homogeneity of the turn-on process in high-voltage 4H–SiC thyristors
11. Fast switch-off of high voltage 4H–SiC npn bipolar junction transistor from deep saturation regime
12. The critical charge concept for 4H-SiC-based thyristors
13. Turn-off operation of a 2.6 kV 4H-SiC gate turn-off thyristor in MOS-gate mode
14. Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs
15. Current rise time constants in switch-on process of SiC thyristors
16. Temperature dependence of turn-on processes in 4H–SiC thyristors
17. Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor
18. 4H–SiC p–n diodes and gate turnoff thyristors for high-power, high-temperature applications
19. A modification over Sakoe and Chiba's dynamic time warping algorithm for isolated word recognition
20. Interpretation of non-equilibrium measurements on MOS devices using the linear voltage ramp technique
21. On improvement of performance of isolated word recognition for degraded speech
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