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Large scale manufacturing of CdTe PV modules at the GW/yr level may be constrained due to the limited availability of the relatively rare (Te) element and the volume of potentially hazardous (Cd) material being used in the typically 3–8 μm thick CdTe absorber layer. However, we find that it is possible to reduce the CdTe layer thickness without much compromise in efficiency. The CdS/CdTe solar cells were fabricated using magnetron sputtering with ultra-thin CdTe layers in the range of 0.5–1.28 μm. The ultra-thin films and cells were characterized using X-ray diffraction (XRD), optical transmission, scanning electron microscopy (SEM), current–voltage and quantum efficiency measurements. These results were compared with those of standard 2.3 μm thick CdTe sputtered cells. Different post-deposition processing parameters were required for cells with ultra-thin and standard CdTe thicknesses to achieve high efficiency. Ultra-thin CdTe cells showed crystallographic texture and CdTe1−xSx alloy formation after CdCl2 treatment very similar to standard CdTe cells. Optimization of the post-deposition CdCl2 treatment and back-contact processing yielded cells of 11.2% efficiency with 0.7 μm CdTe compared to 13.0% obtained with standard 2.3 μm CdTe cells.

Cd1−xZnxTe alloy films with 1.6 and 1.7 eV band gaps were deposited by RF magnetron sputtering from targets made either of mixed powders or alloys of CdTe and ZnTe (25% and 40%). High-quality polycrystalline films with the (1 1 1) preferred orientation were obtained. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, resistivity, optical absorption, Raman, and photoluminescence. The EDS, XRD, and optical absorption analysis indicated that the x-value of the as-grown films were typically ∼0.20 and 0.30 for films sputtered from 25% and 40% ZnTe containing targets, respectively. The as-deposited alloy films exhibit quite low photovoltaic performance when used to make cells with CdS as the hetero-junction partner. Therefore, we have studied various post-deposition treatments with vapors of chlorine-containing materials, CdCl2 and ZnCl2, in dry air or H2/Ar ambient at ∼390 °C. The best performance of a Cd1−xZnxTe cell ( V OC = 737 mV , J SC = 19 mA / cm 2 ) was found for treatment with vapors of the mixed CdCl2+0.5%ZnCl2 in an H2/Ar ambient after pre-annealing at ∼520 °C in pure H2/Ar.

Polycrystalline II–VI semiconductor materials show great promise for efficient, low-cost photovoltaics. Large-area deposition of the II–VI semiconductors such as CdTe is possible by a variety of methods but the use of a plasma-based method such as magnetron sputtering can have significant advantages. Here we present recent results in the fabrication of CdS/CdTe cells using rf magnetron sputtering and discuss some of the advantages that accrue from the use of sputtering methods in this class of materials. Some of these advantages are particularly relevant as the polycrystalline thin-film PV community addresses issues related to the fabrication of tandem cells with efficiencies over 25%. Our best results have been obtained with sputtered ZnO:Al to achieve a CdTe solar cell having 14.0% efficiency at one sun with an air mass 1.5 global spectrum. We have also studied reactive sputtering of ZnTe:N which shows promise for use as a transparent back contact or as a recombination junction with ZnO:Al for II–VI based alloy top cells in a tandem solar-cell configuration. Finally, some advances have been made in substrate-configuration CdTe cells on Mo using sputter deposition that hold promise for flexible CdTe-based PV.

CuInSe2 films have been prepared using the selenization technique. Preparation of the precursor as well as selenization were carried out by the vacuum evaporation technique. The sequence of copper and Indium layer deposition during precursor preparation affects the morphological and structural properties of precursor which directly have effects on the properties of selenized CIS films. A thin layer of amorphous selenium at the substrate/film interface has been used to improve the adherence of the film. The effect of the Se under-layer has been studied on the layers of copper, indium, CuIn precursors and CIS films, using structural, morphological and optical properties. The surface morphology of a single layer of copper and indium, with and without the Selenium under-layer, are quite different and drastically affect the properties of the precursor and selenized films. The Se under-layer does not take part in the chemical reaction of CIS formation during the selenization process. The modified CIS films are uniform, single phase, polycrystalline, chalcopyrite with (1 1 2) preferred orientation showing an energy band gap of 0.99 eV and an absorption coefficient of ∼105 cm−1, and have good adherence to the substrate for the scotch tape test.

The effect of temperature on the degree of alloy formation between Cu and In layers has been studied for the preparation of CuInSe 2 films by the selenization technique. The mechanism of alloy formation is different in bilayers annealed at temperatures lower and higher than the melting point of In, or prepared by deposition of Cu and In at 200°C and 150°C, respectively. While the annealing of the precursor up to 200°C produces an alloy in the interface region of Cu and In layers, annealing at 500°C completely changes its morphology. The effect of alloy formation in the precursor on the selenized CuInSe 2 films is studied using structural, morphological, optical and compositional properties.

Thin films of copper indium diselenide are deposited on Ti substrates by a simple and inexpensive electroless technique. The compositional, structural and morphological properties of the as such and annealed films are studied. The films are of single phase and chalcopyrite structure with (112) preferred orientation. The morphology of the films is found sensitive to the Cu/In ratio.