1. Fluorine-based plasma treatment for hetero-epitaxial β-Ga2O3 MOSFETs
- Author
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Roy B. Chung, Jeong Yong Yang, Gyeongryul Lee, Chan Ho Lee, Ryubin Park, Yeong Je Jeong, and Geonwook Yoo
- Subjects
Resistive touchscreen ,Materials science ,Photoemission spectroscopy ,Contact resistance ,Analytical chemistry ,General Physics and Astronomy ,chemistry.chemical_element ,02 engineering and technology ,Surfaces and Interfaces ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Epitaxy ,01 natural sciences ,0104 chemical sciences ,Surfaces, Coatings and Films ,Secondary ion mass spectrometry ,chemistry ,Electrical resistivity and conductivity ,Fluorine ,0210 nano-technology ,Ohmic contact - Abstract
In this work, we demonstrate the lateral metal–oxidesemiconductor field-effect transistors (MOSFETs) with β-Ga2O3 film (thickness = 150 nm) grown on a c-plane sapphire substrate by a hydride vapor phase epitaxy (HVPE) method using a CF4-based plasma treatment. By incorporating fluorine (F) the electrical characteristics of the surface and bulk regions of the resistive β-Ga2O3 film could be significantly improved. The analyses by secondary ion mass spectrometry and x-ray photoemission spectroscopy confirmed the formation of the substitutional fluorine, FO, with its peak concentration of 2.3 × 1018 cm−3 at 5 ~ 10 nm deep from the surface and about 1015 ~ 1016 cm−3 in the bulk region. While the argon-plasma treatment was insufficient for making a Ti/Au/Ti metal contact ohmic, the same contact formed on the CF4-treated surface showed an ohmic behavior with specific resistivity of 2.0 × 10−3 Ω·cm2 and contact resistance of 0.8 Ω·m without any post thermal annealing. With the improvement of the electrical properties in both the surface and bulk regions, the HVEP-grown hetero-epitaxial β-Ga2O3 MOSFET exhibited the field-effect mobility of up to 5.3 cm2/V⋅s and on/off ratio of 106.
- Published
- 2021
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