1. Irradiation resistance of silicon carbide joint at light water reactor–relevant temperature
- Author
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James O. Kiggans, Takaaki Koyanagi, H.E. Khalifa, Tatsuya Hinoki, Yutai Katoh, Christian P. Deck, and Christina Back
- Subjects
010302 applied physics ,chemistry.chemical_classification ,Nuclear and High Energy Physics ,Materials science ,chemistry.chemical_element ,Sintering ,02 engineering and technology ,Polymer ,021001 nanoscience & nanotechnology ,Microstructure ,01 natural sciences ,Atomic diffusion ,chemistry.chemical_compound ,Nuclear Energy and Engineering ,chemistry ,Molybdenum ,Chemical vapor infiltration ,0103 physical sciences ,Silicon carbide ,General Materials Science ,Composite material ,0210 nano-technology ,Titanium - Abstract
Monolithic silicon carbide (SiC) to SiC plate joints were fabricated and irradiated with neutrons at 270–310 °C to 8.7 dpa for SiC. The joining methods included solid state diffusion bonding using titanium and molybdenum interlayers, SiC nanopowder sintering, reaction sintering with a Ti-Si-C system, and hybrid processing of polymer pyrolysis and chemical vapor infiltration (CVI). All the irradiated joints exhibited apparent shear strength of more than 84 MPa on average. Significant irradiation-induced cracking was found in the bonding layers of the Ti and Mo diffusion bonds and Ti-Si-C reaction sintered bond. The SiC-based bonding layers of the SiC nanopowder sintered and hybrid polymer pyrolysis and CVI joints all showed stable microstructure following the irradiation.
- Published
- 2017
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