1. Microwave characteristics of sol-gel based Ag-doped (Ba0.6Sr0.4)TiO3 thin films
- Author
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Cheolbok Kim, Kyoung Tae Kim, Yong-Kyu Yoon, Dongsu Kim, and David E. Senior
- Subjects
Sol-gel deposition ,Electric fields ,Alkoxide-based sol-gel methods ,Silver ,Materials science ,Scanning electron microscope ,Thin films ,Analytical chemistry ,Silver doping ,Dielectric ,Electrical characterization ,Tunabilities ,Dielectric losses ,Microwave characteristics ,Crystallinity ,Sol-gels ,Materials Chemistry ,Semiconductor doping ,Sol-gel process ,Thin film ,Microwaves ,Sol-gel ,Metal insulator metal capacitor (MIM) ,Doping ,Metals and Alloys ,Tunability ,Surfaces and Interfaces ,Ferroelectricity ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Barium strontium titanate ,Dielectric properties ,Metal insulator boundaries ,Thin film ferroelectrics ,Dielectric loss ,Film preparation ,Microwave ,Scanning electron microscopy - Abstract
Dielectric Ba0.6Sr0.4TiO3 (BST) thin films with a different concentration of Ag-dopant of 0.5, 1, 1.5, 2, 3, and 5 mol % have been prepared using an alkoxide-based sol-gel method on a Pt(111)/TiO 2/SiO2/Si substrate and their surface morphology and crystallinity have been examined using scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis, respectively. An on-chip metal-insulator-metal capacitor has been fabricated with the prepared thin film ferroelectric sample. Concentric coplanar electrodes are used for high frequency electrical characterization with a vector network analyzer and a probe station. The SEM images show that increasing Ag doping concentration leads to a decrease in grain size. XRD reveals that the fabricated films show good BST crystallinity for all the concentration while a doping concentration of 5 mol % starts to show an Ag peak, implying a metallic phase. Improved microwave dielectric loss properties of the BST thin films are observed in a low Ag doping level. Especially, BST with an Ag doping concentration of 1 mol % shows the best properties with a dielectric constant of 269.3, a quality factor of 48.1, a tunability at the electric field of 100 kV/cm of 41.2 %, a leakage-current density of 1.045 × 10- 7A/cm2 at an electric field of 100 kV/cm and a figure of merit (defined by tunability (%) divided by tan δ (%)) of 19.59 under a dc bias voltage of 10 V at 1 GHz. © 2014 Elsevier B.V. All rights reserved. This work was supported by the Global R&D program of MOTIE/KIAT (N0000686)
- Published
- 2014
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