20 results on '"Decoutere, Stefaan"'
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2. A Compact model based on the Lambert Function for AlGaN/GaN Schottky Barrier Gated-Edge Termination
3. TCAD-based design and verification of the components of a 200 V GaN-IC platform
4. A Compact Model Based on the Lambert Function for Algan/Gan Schottky Barrier Gated-Edge Termination
5. Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability
6. Vertical GaN devices: Process and reliability
7. Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates
8. Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation
9. Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
10. Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
11. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
12. Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress
13. Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
14. Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration
15. Recombination in the Ge-spiked monoemitter of the SiGe:C HBTs
16. Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics
17. A plug-and-play wideband RF circuit ESD protection methodology: T-diodes
18. Analytical extraction of small and large signal models for FinFET varactors
19. TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions
20. Experimental determination of selfheating in silicon resistors operated at cryogenic temperatures
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