49 results on '"Degraeve, R"'
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2. Modeling of uniform switching RRAM devices and impact of critical defects
3. Stack optimization of oxide-based RRAM for fast write speed (<1 μs) at low operating current (<10 μA)
4. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits
5. Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling
6. Causes and consequences of the stochastic aspect of filamentary RRAM
7. As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability
8. Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode
9. Statistical insight into controlled forming and forming free stacks for HfOx RRAM
10. Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
11. A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics
12. Detailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2/HfSiO(N)
13. Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack
14. High-k dielectrics for future generation memory devices (Invited Paper)
15. Understanding the potential and limitations of HfAlO as interpoly dielectric in floating-gate Flash memory
16. A consistent model for the hard breakdown distribution including digital soft breakdown: the noble art of area scaling
17. Impact of process conditions on interface and high-κ trap density studied by variable Tcharge-Tdischarge charge pumping (VT2CP)
18. Electrical and reliability characterization of metal-gate/HfO2/Ge FET’s with Si passivation
19. Hydrogen induced positive charge in Hf-based dielectrics
20. Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection
21. Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability
22. Impact of defects on the high-κ/MG stack: The electrical characterization challenge
23. Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs—Concepts, constraints and solutions
24. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
25. On the trap generation rate in ultrathin SiON under Constant Voltage Stress
26. Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks
27. HfO2/spacer-interface breakdown in HfO2 high-κ/poly-silicon gate stacks
28. Understanding oxide degradation mechanisms in ultra-thin SiO2 through high-speed, high-resolution in-situ measurements
29. On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers
30. Modeling pFET currents after soft breakdown at different gate locations
31. Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID–VG
32. A new method for the analysis of high-resolution SILC data
33. Relation between hole traps and hydrogenous species in silicon dioxides
34. High-resolution SILC measurements of thin SiO2 at ultra low voltages
35. Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study
36. Explanation of nMOSFET substrate current after hard gate oxide breakdown
37. Relation between hole traps and non-reactive hydrogen-induced positive charges
38. On the mechanism of electron trap generation in gate oxides
39. Dependence of energy distributions of interface states on stress conditions
40. Ultra-thin oxide reliability: searching for the thickness scaling limit
41. Hot carrier degradation and time-dependent dielectric breakdown in oxides
42. Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction
43. Relation between hydrogen and the generation of interface state precursors
44. Investigation of temperature acceleration of thin oxide time-to-breakdown
45. Assessment of oxide reliability and hot carrier degradation in CMOS technology
46. Impact of tunnel-oxide nitridation on endurance and read-disturb characteristics of Flash E2PROM devices
47. A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions
48. A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides
49. Oxide and interface degradation and breakdown under medium and high field injection conditions: A correlation study
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