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Deep reactive ion etching (DRIE) of borosilicate glass was carried out using SF"6 and SF"6/Ar plasmas in an inductively coupled plasma (ICP) reactor. Electroplated Ni on Cu (@?50nm)/Cr (@?100nm)/glass structure using patterned SU-8 photoresist mask with a line spacing of [email protected] was used as a hard-mask for plasma etching. Plasma etching of borosilicate glass was performed by varying the various process parameters such as the gas chemistry, the gas flow ratio, the top electrode power, and the dc self-bias voltage (V"d"c). In the case of using SF"6 gas only, the profiles of the etched channel showed the undercut below the Ni hard-mask due to a chemical etching and the microtrenching at the bottom of the etched channel. An optimized process using the SF"6 plasmas showed the glass etch rate of @?750nm/min. The addition of the Ar gas to the SF"6 gas removed the undercut and microtrenching but decreased the etch rate to @?540nm/min. The increasing and decreasing time-dependent etch rates with the etch depth in the SF"6 (200sccm) and SF"6(60%)/Ar(40%) plasmas, respectively, were ascribed to the different ion-to-neutral flux ratios leading to the different etch process regime.

The theory of generation-recombination noise in silicon bars and in JFETs is extended to the case in which the devices operate in the hot electron regime. It is shown that Nougier et al. 's measurements at 77°K can at least be partly explained as generation recombination noise; as a matter of fact, the theory can provide an almost perfect match for field strengths between 1000 and 3000 V/cm for g - r noise alone. We believe, however, that some hot electron noise with a similar field dependence as g - r noise is present. One can now understand why Kim, van der Ziel and Rucker found an activation energy of only 63 mV for the noise in silicon JFETs around 77°K.