1. Structure analysis of two-dimensional Holmium silicide by low energy electron diffraction
- Author
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H Kitayama, Toshio Urano, S.P. Tear, and D. J. Spence
- Subjects
Silicon ,Low-energy electron diffraction ,Scattering ,Bilayer ,chemistry.chemical_element ,Surfaces and Interfaces ,Substrate (electronics) ,Condensed Matter Physics ,Molecular physics ,Surfaces, Coatings and Films ,Crystallography ,chemistry.chemical_compound ,chemistry ,Silicide ,Monolayer ,Materials Chemistry ,Holmium - Abstract
The Ho/Si(1 1 1)-1×1 and H–Ho/Si(1 1 1)-1×1 surfaces have been investigated by low energy electron diffraction I–V curve analysis. Several structural models have been tried and the optimum structure has been obtained using a combination of search methods. In the case of the Ho/Si(1 1 1) surface, Ho atoms sit on T4 sites of the Si(1 1 1) near bulk-like layer and are located underneath a Si bilayer which is rotated 180° with respect to the substrate Si layers. This is the same structure as proposed by medium-energy ion scattering. In the case of the H–Ho/Si(1 1 1)-1×1 surface, Si atoms in the surface bilayer have normal stacking and are located above the same lateral position as the topmost bulk layer.
- Published
- 2001
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