1. Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
- Author
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Jan Dellith, Uwe Huebner, Sebastian Goerke, Markus Rettenmayr, Hans-Georg Meyer, Andreas Ihring, Mario Ziegler, Marco Diegel, Andreas Undisz, and Solveig Anders
- Subjects
Materials science ,Silicon ,Analytical chemistry ,General Physics and Astronomy ,chemistry.chemical_element ,Surfaces and Interfaces ,General Chemistry ,Nitride ,Condensed Matter Physics ,Rutherford backscattering spectrometry ,Focused ion beam ,Surfaces, Coatings and Films ,Atomic layer deposition ,chemistry.chemical_compound ,Silicon nitride ,chemistry ,Thin film ,High-resolution transmission electron microscopy - Abstract
Aluminum nitride (AlN) thin films with thicknesses from 20 to 100 nm were deposited on silicon, amorphous silica, silicon nitride, and vitreous carbon by plasma enhanced atomic layer deposition (PE-ALD). Trimethylaluminum (TMA) and a H2/N2 plasma mixture were used as precursors. We investigated the influence of deposition temperature and plasma parameters on the growth characteristics and the film properties of AlN. Stable PE-ALD growth conditions were obtained from 150 °C to the highest tested temperature of 300 °C. The growth rate, refractive index, and thickness homogeneity on 4″ wafers were determined by spectroscopic ellipsometry. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) were carried out to analyze crystallinity and composition of the films. Furthermore, the thermal conductivity and the film stress were determined. The stress was sufficiently low to fabricate mechanically stable free-standing AlN membranes with lateral dimensions of up to 2.2 × 2.2 mm2. The membranes were patterned with focused ion beam etching. Thus, these AlN membranes qualify as dielectric support material for a variety of potential applications.
- Published
- 2015
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