1. The transport properties of Nb-doped trichalcogenide Ta0.8Nb0.2S3
- Author
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Xiaoyang Chen, Z. A. Xu, Junfen Zhou, Yingxin Xu, and Jingqin Shen
- Subjects
Materials science ,Nb doped ,Condensed matter physics ,Dc resistivity ,Electrical resistivity and conductivity ,Seebeck coefficient ,Electrical and Electronic Engineering ,Condensed Matter Physics ,Charge density wave ,Chemical composition ,Electronic, Optical and Magnetic Materials - Abstract
Single crystals of TaS3 and Nb-doped Ta0.8Nb0.2S3 were grown by the usual vapor-transport method. The low-field DC resistivity, thermoelectric power, and I–V characteristics of both samples have been measured. Non-linear I–V characteristics due to possible CDW transition were found in Ta0.8Nb0.2S3 at temperatures up to 400 K and the temperature dependence of resistivity remained insulator-like even when the temperature was as high as 400 K. Possible CDW transition in Ta0.8Nb0.2S3 crystals at temperatures above 400 K is suggested and need further studies to confirm.
- Published
- 2004