1. Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field
- Author
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Elmer Estacio, Karim Omambac, Armando Somintac, J. G. Porquez, Arnel Salvador, Karl Cedric Gonzales, John Daniel Vasquez, Mae Agatha Tumanguil, Elizabeth Ann Prieto, Alexander De Los Reyes, Kohji Yamamoto, Masahiko Tani, Joselito Muldera, and Lorenzo Lopez
- Subjects
Gallium manganese arsenide ,Materials science ,Condensed matter physics ,Terahertz radiation ,General Physics and Astronomy ,02 engineering and technology ,Substrate (electronics) ,Magnetic semiconductor ,021001 nanoscience & nanotechnology ,01 natural sciences ,Magnetic field ,chemistry.chemical_compound ,Crystallinity ,chemistry ,0103 physical sciences ,General Materials Science ,010306 general physics ,0210 nano-technology ,Absorption (electromagnetic radiation) ,Molecular beam epitaxy - Abstract
We investigate the effects of an externally applied magnetic field on the terahertz (THz) emission of Gallium Manganese Arsenide (GaMnAs) films grown via molecular beam epitaxy (MBE). Results show that low Mn-doping in GaMnAs resulted to increased THz emission as compared with a SI-GaAs substrate. Further increase in Mn-doping content resulted to a comparably less THz emission, which is attributed to reduced crystallinity and higher free-carrier absorption. Under an external magnetic field, the contributions of the B u p and B d o w n -related THz emission were observed to be asymmetric: possibly due to intrinsic magnetic properties of GaMnAs.
- Published
- 2017
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