19 results on '"Kitada, Takahiro"'
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2. Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (1 1 3)A and (1 1 3)B GaAs substrates
3. Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources
4. Effects of Sb-soak on InAs quantum dots grown on (001) and (113)B GaAs substrates
5. Terahertz emission from a coupled multilayer cavity with InAs quantum dots
6. Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers
7. Marked reduction in photocarrier lifetime by erbium doping into self-assembled InAs quantum dots embedded in strain-relaxed InGaAs barriers
8. Large optical Kerr signal of GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers
9. Doping effect on photocarrier lifetime in InAs quantum dots with strain-relaxed InGaAs barriers grown by molecular beam epitaxy
10. Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed barriers for ultrafast nonlinear optical switching applications
11. Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (411)A-oriented substrates by MBE
12. Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on GaAs substrates
13. V/III ratio dependence of surface migration length of As4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substrates
14. Single-particle relaxation times in a pseudomorphic In0.7Ga0.3 As/In0.52Al0.48As QW-HEMT structure with A super-flat interfaces grown by MBE
15. Extremely flat growth-interrupted InAlAs surface grown on a -oriented InP substrate by molecular beam epitaxy
16. Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE
17. Lattice-matched In Ga1−As/In Al1−As quantum wells (x= 0.18 and 0.19) grown on (4 1 1)A- and (1 0 0)-oriented InGaAs ternary substrates by molecular beam epitaxy
18. Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate
19. Extremely uniform In0.08Ga0.92As/GaAs superlattice grown on a (411)A GaAs substrate by molecular beam epitaxy
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