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Laser radiation is used both for the deposition of the laser active thin films and for the microstructuring to define wave guiding structures for the fabrication of waveguide lasers. Thin films of Er:ZBLAN (a fluoride glass consisting of ZrF 4 , BaF 2 , LaF 3 , AlF 3 , NaF, ErF 3 ) for green up-conversion lasers (545 nm) are produced by pulsed laser deposition using ArF excimer laser radiation (wavelength 193 nm). Manufacturing of the laser active waveguides by microstructuring is done using fs-laser ablation of the deposited films. The structural and optical properties of the films and the damping losses of the structured waveguides are determined in view of the design and the fabrication of compact and efficient diode pumped waveguide lasers. The resulting waveguides are polished, provided with resonator mirrors, pumped using diode lasers and characterized.

Laser radiation is used both for the deposition of the laser active thin films and for the micro structuring to define wave guiding structures for the fabrication of waveguide lasers. Thin films of crystalline and amorphous neodymium doped Gd 3 Ga 5 O 12 are grown on single crystal yttrium aluminium garnet by pulsed laser deposition using excimer laser radiation. Manufacturing of the laser active waveguides by micro structuring is done using femtosecond laser ablation of the deposited films. The structural and optical properties of the films and the morphology of the structured waveguides are determined in view of the design and the fabrication of compact and efficient diode pumped waveguide lasers. The resulting waveguides are polished, provided with resonator mirrors, pumped using diode lasers and the waveguide lasers are characterized. The spectroscopic properties of the amorphous waveguide are investigated and an infrared waveguide laser is demonstrated. To our knowledge, there have been no reports by other groups of the successful operation of a structured waveguide laser fabricated by this technique or of a waveguide laser made from amorphous neodymium doped Gd 3 Ga 5 O 12 .