1. Wafer-scale vertically aligned carbon nanotubes for broadband terahertz wave absorption
- Author
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Edwin Hang Tong Teo, Minmin Zhu, Chun Zhao, Liang-Cheng Tu, Wang Yurong, Peiyi Song, Xiao Dongyang, Leimeng Sun, Fangjing Hu, Huafeng Liu, Siu Hon Tsang, School of Electrical and Electronic Engineering, Temasek Laboratories @ NTU, and Centre for Micro-/Nano-electronics (NOVITAS)
- Subjects
Materials science ,Silicon ,Terahertz radiation ,Infrared ,Physics::Optics ,chemistry.chemical_element ,02 engineering and technology ,Substrate (electronics) ,Carbon nanotube ,010402 general chemistry ,01 natural sciences ,Cost Effectiveness ,law.invention ,law ,General Materials Science ,Wafer ,Absorption (electromagnetic radiation) ,business.industry ,General Chemistry ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,chemistry ,Absorptance ,Electrical and electronic engineering [Engineering] ,Optoelectronics ,Carbon Nanotubes ,0210 nano-technology ,business - Abstract
Materials with high and broadband absorption characteristics in the terahertz (THz) range are desirable for many applications. In this paper, we propose, fabricate and experimentally demonstrated a wafer-scale vertically aligned carbon nanotube (VACNT) array for broadband THz wave absorption. The effects of VACNT parameters on the absorption performance are investigated within the THz and infrared spectra using the Maxwell-Garnett theory, revealing that the absorption in the THz range can be greatly enhanced by suitable selections of the length, volume fraction and vertical alignment factor of CNTs. A VACNT array with an average CNT length of ∼600 μm is fabricated on a 4-inch silicon substrate. Experimental results measured by a THz time-domain spectroscopic system show an average power absorptance of ∼98% from 0.3 to 2.5 THz, and agree well with the numerical modelling. This device can be used as a cost-effective near-perfect absorber across the THz and infrared regions for thermal emission and imaging, electromagnetic interference shielding, stealth and energy harvesting applications. This work was partially supported by the National Key R&D Program of China (Grant No. 2018YFC0603301), the National Natural Science Foundation of China (Grant No. 61801185), and HUST Key Innovation Team Foundation for Interdisciplinary Promotion (Grant No. 2016JCTD102). We thank Kejia Wang and Yue Song at the Wuhan National Laboratory for Optoelectronics at HUST for their assistance in THz-TDS measurements.
- Published
- 2019
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