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PROBA-3 is an ESA mission aimed at the demonstration of formation flying performance of two satellites that will form a giant coronagraph in space. The first spacecraft will host a telescope imaging the solar corona in visible light, while the second, the external occulter, will produce an artificial eclipse. This instrument is named ASPIICS (Association of Spacecraft for Polarimetric and Imaging Investigation of the Corona of the Sun). To accomplish the payload's scientific tasks, PROBA-3 will ensure sub-millimeter reciprocal positioning of its two satellites using closed-loop on-board metrology. Several metrology systems will be used and the Shadow Position Sensors (SPS) subsystem senses the penumbra around the instrument aperture and returns the 3-D displacement of the coronagraph satellite, with respect to its nominal position, by running a dedicated algorithm. In this paper, we describe how the SPS works and the choices made to accomplish the mission objectives.

This work addresses a systematic and in-depth electro-optical characterization of the Multi-Pixel Photon Counter (MPPC) sensors constituting the camera detection system at the focal plane of the ASTRI telescope prototype. The paper reports the experimental results of a large set of measurements on the MPPC devices in order to provide a reliable qualification of the detector performance and evaluate its compliance with the telescope focal plane requirements. In particular, breakdown voltage, internal gain, dark count rate, cross-talk and extra-charge probability, and absolute photon detection efficiency measurements are performed on the basic sensor device unit as a function of the detector operating conditions.

The present work introduces an improved SPICE equivalent electrical model of silicon photomultiplier (SiPM) detectors, in order to simulate and predict their transient response to avalanche triggering events. In particular, the developed circuit model provides a careful investigation of the magnitude and timing of the read-out signals and can therefore be exploited to perform reliable circuit-level simulations. The adopted modeling approach is strictly related to the physics of each basic microcell constituting the SiPM device, and allows the avalanche timing as well as the photodiode current and voltage to be accurately simulated. Predictive capabilities of the proposed model are demonstrated by means of experimental measurements on a real SiPM detector. Simulated and measured pulses are found to be in good agreement with the expected results.

We present the preliminary results of the characterization of silicon detectors in terms of Photon Detection Efficiency (PDE). The precision measurements are performed at controlled temperature, using a specially suited setup based on a monochromator, an integrating sphere to randomize the incident light and a calibrated reference photodiode. We exploit a measurement technique that we recently devised, based on single photon counting with subtraction of dark noise, and avoiding as much as possible cross-talk and afterpulses. We describe in detail the experimental setups and the techniques utilized to measure the PDE. The achieved results are here discussed in order to establish a methodology capable to give very precise PDE values for solid-state photomultiplier detectors.

In this paper we present the results of the first electrical and optical characterization performed on STMicroelectronics new photosensor technology based on silicon single-photon avalanche photodiodes (SPAD). On the prospective of the design and the manufacturing of large-area silicon photomultipliers to be used as photodetectors for nuclear medicine imaging applications, we have modified our previous SPAD technology by means of the integration of a high-value quenching resistor to the photodiode. Moreover, an appropriate antireflective coating layer and the reduction of the quasi-neutral region thickness above the thin junction depletion layer have been introduced in the process flow of the device to enhance its spectral response in blue and near ultraviolet wavelength ranges. High gain, low leakage currents, low dark noise, very good quantum detection efficiency in blue–near UV ranges and a good linearity of the photodiode response to the incident luminous flux are the main characterization results.

In this paper, we present the results regarding the electrical and optical characterization of bidimensional arrays of silicon single photon avalanche photodiodes (SPAD). Low average dark count rates and crosstalk probability, good timing jitter and high quantum detection efficiency in the visible range have been measured over 5 × 5 SPAD arrays with 40 μm single pixel active area diameter. Moreover, a very good uniformity of these parameters has been found over the single pixels. These good electro-optical performances make our photodiodes attractive for the fabrication of arrays with a larger number of SPAD. In view of the design of a dense array to be used as a silicon photomultiplier (SiPM) for medical diagnostic tools, 5 × 5 SPAD arrays have been also tested in the photon-resolving mode. Charge spectra show that the arrays, in this configuration, allow to resolve several photoelectron peaks with a good single photoelectron resolution.