50 results on '"Okuyama, Masanori"'
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2. Pulse-controlled generation and characterization of partially-switched multiple-value polarization states in PZT ceramics
3. Influences of perforation ratio in characteristics of capacitive micromachined ultrasonic transducers in air
4. Preparation and characterisation of PZT films by RF-magnetron sputtering
5. Multiferroic properties of polycrystalline Zn-substituted BiFeO3 thin films prepared by pulsed laser deposition
6. Characterization of epitaxial BiFeO3 thin films prepared by ion beam sputtering
7. Theoretical analysis of fluorine-passivated germanium surface for high-k/Ge gate stack by molecular orbital method
8. Ferroelectric–relaxor crossover characteristics in Ba(ZrxTi1−x)O3 ceramics investigated by AFM-piezoresponse study
9. Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface
10. Development of a capacitive ultrasonic sensor having parylene diaphragm and characterization of receiving performance of arrayed device
11. Diaphragm deflection control of piezoelectric ultrasonic microsensors for sensitivity improvement
12. Synthesis and characteristics of nature-superlattice-structured Bi3TiNbO9–Bi4Ti3O12 ferroelectric thin films by MOD
13. Preparation of fluorocarbon thin film deposited by soft X-ray ablation and its electrical characteristics and thermal stability
14. Investigation of the switching characteristics in ferroelectrics by first-order reversal curve diagrams
15. Sensitivity improvement of diaphragm type ultrasonic sensors by complementary piezoelectric polarization
16. A new method of position measurement using ultrasonic array sensor without angular scanning
17. Stress influences on the ultrasonic transducers
18. A nucleation-growth model for ferroelectric hysteresis loops with complete and partial switching
19. Ultrasonic micro array sensors using piezoelectric thin films and resonant frequency tuning
20. Preparation of BST ferroelectric thin film by metal organic decomposition for infrared sensor
21. An uncooled infrared sensor of dielectric bolometer mode using a new detection technique of operation bias voltage
22. Wavelength-differential imaging for extraction of characteristic spectra
23. Arrayed ultrasonic microsensors with high directivity for in-air use using PZT thin film on silicon diaphragms
24. Preparation and characterization of Bi4Ti3O12–SrBi4Ti4O15 ferroelectric thin films by pulsed laser deposition
25. Preparation of BaxSr1−xTiO3 thin films with seeding layer by a sol–gel method
26. Si monolithic microbolometers of ferroelectric BST thin film combined with readout FET for uncooled infrared image sensor
27. Theoretical analysis of methanol and hydrogen adsorptions on SnO2 by molecular orbital calculation
28. Structural and electrical properties of highly oriented Pb(Zr,Ti)O3 thin films deposited by facing target sputtering
29. Low-temperature preparation of SrxBi2+yTa2O9 ferroelectric thin film by pulsed laser deposition and its application to metal–ferroelectric–insulator–semiconductor structure
30. A low-temperature preparation of ferroelectric SrxBi2+yTa2O9 thin film and its application to metal-ferroelectric-insulator-semiconductor structure
31. A new type of dielectric bolometer mode of detector pixel using ferroelectric thin film capacitors for infrared image sensor
32. Electronic characterization of Si/SiO2 structure using photo-CVD SiO2 thin film on atomically flat Si substrate
33. Miniaturized infrared sensor using silicon diaphragm based on Golay cell
34. Dielectric property of ferroelectric-insulator-semiconductor junction
35. Surface treatment effects on microscopic Si surface structure and SiSiO2 interface state
36. Surface characterization using infrared reflection absorption spectroscopy on Si(100) processed by wet cleaning and gas treatment
37. Aspherically bent SiC mirror: Bending test
38. BaRuO3 thin films prepared by pulsed laser deposition
39. Photoluminescence of SiO2 films grown by photo-induced chemical vapor deposition
40. In situ characterization of a Si surface by high-sensitivity infrared reflection spectroscopy
41. Pyroelectric infrared image sensors using Si CCD and FET arrays
42. Basic characterisitics of an infrared CCD with a pyroelectric gate
43. Optical and interfacial properties of SiO2 films deposited on Si by photo-CVD
44. Growth behavior of highly oriented Si films on fused quartz by photo-CVD
45. Fourier-transformation analysis of deep level transient signals in semiconductors
46. Carrier trapping centers and interface states induced by r.f. sputtering of molybdenum electrodes in MOS-structure diodes
47. SiO2 film growth by double-excitation photo-CVD using Si3H8 and O2
48. Pyroelectric infrared-CCD image sensor using LiTaO3
49. Selective absorber using glow-discharge amorphous silicon for solar photothermal conversion
50. Electroreflectance of p-type GaAs
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