107 results on '"Svensson, B.G."'
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2. Local homoepitaxy of zinc oxide thin films by magnetron sputtering
3. Influence of target power on properties of CuxO thin films prepared by reactive radio frequency magnetron sputtering
4. Dynamic defect annealing in wurtzite MgZnO implanted with Ar ions
5. Evidence for resonant tunneling from interface states in as-grown n-4H-SiC/SiO 2 capacitors
6. Reconfigurations and diffusion of trivacancy in silicon
7. Ion implantation induced defects in ZnO
8. Damage accumulation and annealing behavior in high fluence implanted MgZnO
9. Silicon detectors for the sLHC
10. Structural, optical and electrical properties of reactively sputtered Ag2Cu2O3 films
11. Electronic properties of n-ZnO(Al)/p-Si heterojunction prepared by dc magnetron sputtering
12. Structural damage in ZnO bombarded by heavy ions
13. Trivacancy-oxygen complex in silicon: Local vibrational mode characterization
14. Effect of high temperature treatments on defect centers and impurities in hydrothermally grown ZnO
15. Shallow levels in virgin hydrothermally grown n-type ZnO studied by thermal admittance spectroscopy
16. Trivacancy in silicon: A combined DLTS and ab-initio modeling study
17. Trivacancy-oxygen complex in silicon: Local vibrational mode characterization
18. Thin films of In2O3 by atomic layer deposition using In(acac)3
19. Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si
20. Effect of heat treatment on ITO film properties and ITO/p-Si interface
21. Electronic properties of the interface between Si and sputter deposited indium-tin oxide
22. Defect and dopant kinetics in laser anneals of Si
23. Ion implantation in 4H–SiC
24. Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance
25. Morphology, electrical and optical properties of undoped ZnO layers deposited on silicon substrates by PEMOCVD
26. Magnetic resonance studies of defects in electron-irradiated ZnO substrates
27. Conductivity increase of ZnO:Ga films by rapid thermal annealing
28. Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing
29. Mechanism of de-activation and clustering of B in Si at extremely high concentration
30. The influence of structural defects on phosphorus diffusion in multicrystalline silicon
31. Radiation hardness of silicon detectors based on pre-irradiated silicon
32. Structural and morphological properties of ZnO:Ga thin films
33. Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe films
34. Strong Coulomb correlation effects in ZnO
35. Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1−xGex
36. Scanning probe microscopy of single Au ion implants in Si
37. Analysis of ITO thin layers and interfaces in heterojunction solar cells structures by AFM, SCM and SSRM methods
38. Analysis of thin layers and interfaces in ITO/a-Si:H/c-Si heterojunction solar cell structures by secondary ion mass spectrometry
39. Excimer Laser annealing for shallow junction formation in Si power MOS devices
40. Oxidation of 4H–SiC covered with a SmSix surface alloy
41. Electronic structure and band parameters for Zn (, S, Se, Te)
42. PEMOCVD of ZnO thin films, doped by Ga and some of their properties
43. Excimer laser annealing of B and BF2 implanted Si
44. Boron distribution in silicon after excimer laser annealing with multiple pulses
45. Evolution of high-dose implanted hydrogen in ZnO
46. Annealing study of Sb+ and Al+ ion-implanted ZnO
47. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC
48. Electrically active centers induced by electron irradiation in n-type si detectors
49. Development of radiation tolerant semiconductor detectors for the Super-LHC
50. Radiation-hard semiconductor detectors for SuperLHC
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