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Solution-processed AlO x thin films were annealed at different temperatures (250, 350, 450 and 550 °C). The annealing effects on the physical properties of AlO x thin films were studied. It is found that the leakage current density is decreased with increasing annealing temperature. The AlO x thin film annealed at 550 °C exhibits the best insulation performance with a current density of 2.7×10 −9 A/cm 2 at a bias voltage of 3 V. In order to demonstrate the feasibility of application in the thin film transistor (TFT) devices, an indium–titanium–zinc-oxide TFT based on AlO x dielectric was integrated. The TFT can be operated under a low voltage of 5 V, with a high field effect mobility of 23.7 cm 2 /Vs, a threshold voltage of 1.5 V, a subthreshold swing of 0.22 V/decade, and an on/off current ratio of 10 6 . The results demonstrate that AlO x dielectric thin film prepared by solution process is a promising gate dielectric candidate for high-performance oxide devices. The results indicated the potential applications in transparent electronics.