1. The impact on power semiconductor device operation due to local electric field alterations in the planar junction termination
- Author
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Marco Bellini, Fabian Fischer, Chiara Corvasce, Frank Richter, Arnost Kopta, Friedhelm Dr. Bauer, Munaf Rahimo, Martin Bayer, Umamaheswara Vemulapati, and Silvan Geissmann
- Subjects
010302 applied physics ,Materials science ,business.industry ,Blocking (radio) ,020208 electrical & electronic engineering ,Electrical engineering ,02 engineering and technology ,Condensed Matter Physics ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Power (physics) ,Reliability (semiconductor) ,Planar ,Electric field ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,Power semiconductor device ,Electrical and Electronic Engineering ,Safety, Risk, Reliability and Quality ,business ,Sensitivity (electronics) ,Voltage - Abstract
In this paper, we present and discuss simulation and experimental results obtained from investigating the impact of local alterations of the electric field profile in the power device planar junction termination region. Such local modifications are due to possible various extrinsic causes (manufacturing, operational or environmental) and are shown to have a critical influence on the device voltage blocking capability and reliability. The results point towards junction termination sensitivity to locally modified fields especially under voltage switching conditions due to higher leakage current densities in the modified area compared to the rest of the JT region.
- Published
- 2016