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Effects of tritium content on crystal lattice, 3He retention and structure evolution during aging of Ti tritides were investigated using X-ray diffraction, together with analysis of 3He release. Phase transformation and lattice parameters of the Ti tritides varied apparently depending on tritium stoichiometry. Initial tritium content in the Ti tritides showed significant effects on 3He retention due to the existence of α + δ phase boundaries and lattice symmetry in the Ti tritide. The critical contents of 3He release in the α + δ phase region and e phase region were found to be smaller than that in the δ phase region. Variation of crystal lattice structures of α + δ, δ and e phases in the Ti tritides has been investigated, and evolution of 3He during aging is mainly governed by the finite defects of self-interstitial atoms, dislocation loops, 3He bubbles, and dislocations created by formation and growth of 3He bubbles. In the α + δ two phase region, the phase boundaries played an important role to accumulate 3He bubbles and cause inter-bubble fracture. In the e phase region, a preferred condensation of finite defects in basal plane of Ti tritide lattice and formation of a dislocation network were identified.

In a materials study of ErSi 2 /Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi 2 thin film were investigated with varying degrees of Si(001) surface amorphization. The amorphization was carried out by in situ Ar plasma cleaning and Si pre-amorphization implant. It was found that the ErSi 2 thin film becomes smoother but less textured and less epitaxial with Si(001) with increasing degree of the Si surface amorphization. In addition, an increased oxygen penetration during rapid thermal annealing occurs with increasing substrate amorphization.

The origins of different gate leakage behaviors for both PMOS and NMOS with ultra-thin nitrided gate oxide have been studied and modeled. Both equivalent oxide thickness (EOT) and barrier lowering are affected the gate leakage. In NMOS with nitrided oxide, the advantage of EOT decrease is larger to offset the barrier lowering, thus improvement on gate current reduction rate ( R J g ). The situation in PMOS is just contrary to the NMOS, therefore the gate leakage increased with increasing nitridation time. We attribute this to the different barrier lowering in conduction band and valence band.

On the basis of pilot rolling data on the microstructure and mechanical properties of CMn steels, computer models of the relationships between the microstructure and mechanical properties have been established using Artificial Neural Networks (ANNs). These models show good learning precision and generalization, and therefore can be used for predicting the mechanical properties of hot-rolled steel strips.

In this letter, I/V curves, output luminance of the organic light emitting diodes (OLEDs) with N2 doped electron transport layer (ETL) have been studied in detail. Experimental results show that the turn on voltage and driving voltage of OLEDs with ETL evaporated in the optimum N2 gas ambient pressure of 1×10−4 Torr are reduced from 3.5 to 1 V and 7.7 to 5.7 V, respectively. The significant improving mechanism has been illustrated comprehensively with a schematic energy diagram model.

It is known that a (7 × 7) superstructure forms in the temperature range 300 to 400 K, upon oxidation of Ni(100). Quantitative measurement of LEED spot intensities reveals the presence of regularly-spaced antiphase walls within the (7 × 7) unit cell. We suggest that such antiphase walls may serve generally to relieve strain in oxide epitaxies.