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5. Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications

6. Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap

7. Integration aspects of strained Ge pFETs

8. Superior reliability of high mobility (Si)Ge channel pMOSFETs

9. Challenges and opportunities in advanced Ge pMOSFETs

12. Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession

13. Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

14. Multi-gate devices for the 32nm technology node and beyond

15. Independent double-gate FinFETs with asymmetric gate stacks

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