Search

Omija (Schisandra chinesis Baillon) is a cluster of berries, mainly cultivated in East Asian countries. The objective of this study was to conduct an instrumental volatile flavor analysis and descriptive analysis of omija samples using headspace stir-bar sorptive extraction gas chromatography-mass spectrometry. Three omija fruits were included and pre-treated using three different methods: frozen omija (FO), frozen-blended omija (FBO), and freeze-dried omija (FDO). A total of 28 volatiles were identified, and significant differences in concentrations found among omija samples were noted, especially for previously identified aroma-active compounds such as α-pinene, α-terpinene, and (E)-β-ocimene (p .05). In terms of sensory perception, significant differences were observed in three sensory attributes that included, ginger, pine needle, and wet grassy aromatics among the samples (p 0.05). While similarities and dissimilarities were observed among the three samples in the instrumental flavor analysis results, a principal component analysis revealed that FBO and FDO shared similar flavor characteristics while FO had distinctive flavor characteristics.

An analytical method involving QuEChERS (quick, easy, cheap, effective, rugged, and safe) sample preparation, followed by LC-MS/MS and GC-MS/MS was developed and validated for the determination of 60 pesticides in eggs. Recoveries of 70-120% were achieved for selected pesticides and relative standard deviations20% were obtained for most analytes at three concentrations. The limit of quantification was10 µg kg

We report the drastic enhancement of Shubnikov–de Haas (SdH) oscillations observed in a GaN/AlGaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power and temperature are investigated. The underlying mechanism is attributed to the effect of carrier heating. This technique helps study the transport properties of two-dimensional electrons in a GaN/AlGaN heterostructure. In addition, this method has the advantage of keeping the carrier concentration fixed and not requiring expensive high-energy laser facilities compared with carrier-modulated SdH measurements.

We studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $\nu=4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the $\nu=4$ quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition., Comment: Our experimental results are inconsistent with Huckestein's argument [PRL 84, 3141 (2000)]