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Start Over Author "Zhai, Xuejun" Publisher elsevier bv
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7. Breakdown-quenching characteristics and mechanisms for silicon photomultipliers

Author

Changjun Zhu, Guoqing Zhang, Dejun Han, and Zhai Xuejun

Subjects
Physics, Avalanche diode, Physics::Instrumentation and Detectors, business.industry, Avalanche photodiode, Atomic and Molecular Physics, and Optics, Avalanche breakdown, Electronic, Optical and Magnetic Materials, Silicon photomultiplier, Optics, Single-photon avalanche diode, Optoelectronics, Breakdown voltage, Equivalent circuit, Zener diode, Electrical and Electronic Engineering, business
Abstract

Some deviant breakdown-quenching characteristics of silicon photomultipliers are demonstrated and their physical mechanisms are explored. “Twice breakdown” phenomenon, “flat-topped” avalanche pulses and the determination method of the real breakdown voltage of the detector are analyzed. These characteristics are explained by the integration model in terms of avalanche threshold current based on the Haitz's equivalent circuit model. The reasoning results show that the maximum over-voltage for a normal operating silicon photomultiplier equals the product of the avalanche threshold current and the quenching resistor of the avalanche photo-diode (APD) pixel, approximately. Moreover, the model and results can be extended to other small avalanche junctions with quenching resistor.

Published
2013

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