9 results on '"Cai, Shujun"'
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2. Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique
3. High temperature RF performances of epitaxial bilayer graphene field-effect transistors on SiC substrate
4. Threshold voltage modulation mechanism of high-performance normally-off AlGaN/GaN gates-separating groove HFET
5. Simulation study of GaN-based HFETs with graded AlGaN barrier
6. Trap behaviors in AlGaN/GaN based polarization-doped field effect transistors by frequency-dependent conductance–voltage characterizations
7. Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs
8. High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications
9. Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)
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