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A mixed potential model (MPM) comprising the Point Defect Model (PDM) and the Generalized Butler Volmer Equation (GBVE) was successfully developed to study the passivity of HDSS 2707. The results show that the dominant point defect within the passive film is the Min+, thereby rendering n-type semiconductor behavior of the barrier layer. The anodic current is independent of the film formation potential whereas it increases with increasing temperature and follows the Arrhenius law. The partial cathodic current of hydrogen reaction is affected by the applied voltage. The anodizing constant of the passive film is calculated to be 2.91 nm/V.

Passivity breakdown on HDSS 2707 has been studied and the electrochemical data are interpreted in terms of the Point Defect Model. Pitting parameters of HDSS 2707 are determined, including the polarizability at bl/s interface, the defect annihilation rate, and the defect diffusion coefficient. The breakdown potential is demonstrated to be linearly related to log [Br-], pH, and the square root of potential scan rate (v1/2), and follows a near-normal distribution. The critical vacancy concentration calculated from the PDM is consistent with that estimated crystallographically from the chromic barrier layer, and the dominant point defect is further confirmed by Mott-Schottky measurements.