1. Improving workfunction control of metal gate electrodes.
- Author
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Pantisano, Luigi, Schram, Tom, Heyns, Marc, O'Sullivan, Barry, De Gendt, Stefan, and Groeseneken, Guido
- Subjects
- *
ELECTRON work function , *ELECTRODES , *METAL oxide semiconductor field-effect transistors , *DIELECTRICS , *TEMPERATURE effect , *SEMICONDUCTORS - Abstract
The article discusses the means of improving the workfunction control of metal gate electrodes. The author cites that the key challenge for applying metal gates for metal-oxide-semiconductor field-effect transistor is the choosing of a metal with suitable workfunction. The author also defines a novel route to workfunction control through the alteration of the interface polarization layer by cautious deposition of dielectric stack and metal gate, then, by a temperature treatment.
- Published
- 2006