1. Smallest aspect-ratio form-birefringence half-wave plate
- Author
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Kampfe, Thomas, Sixt, Pierre, Renaud, Denis, Lagrange, Armelle, Perrin, Fabrice, Torres, Remi, Gomard, Guillaume, Parriaux, Olivier, Laboratoire Hubert Curien [Saint Etienne] (LHC), Institut d'Optique Graduate School (IOGS)-Université Jean Monnet [Saint-Étienne] (UJM)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Services des Opérations Technologiques (SDOT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ALPhANOV, INL - Nanophotonique (INL - Photonique), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Photovoltaïque (INL - PV), Laboratoire Hubert Curien (LHC), Institut d'Optique Graduate School (IOGS)-Université Jean Monnet - Saint-Étienne (UJM)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] - Abstract
International audience; Subwavelength 0th order gratings permit to create a phase-shift between the polarized 0th order grating modes propagating down the slits and grooves of a binary corrugation, and to transform the polarization of an incident beam. The phase-shift per unit height of the grating is an increasing function of the refractive index difference between ridges and grooves. If the ridges are made by photolithography in a resist or by polymer embossing, the low refractive index leads to a very large corrugation aspect ratio (approx. 4 for a half-wave phase-shift) that is difficult to fabricate and/or provides insufficient mechanical stability. If the ridges are made in a high index non-organic material (e.g. a semiconductor) the needed depth is reduced (although still notably larger than 1 for a half-wave phase-shift). However, in this case due to a more significant Fabry-Perot effect between the upper and lower boundaries of the 0th order grating, high transmission is guaranteed only if its resonance condition is ensured for both polarizations simultaneously. Using an inventive design by phase management of the involved grating modes we have found that all three conditions (pi phase-shift between TE and TM and both Fabry-Perot resonances) can indeed be satisfied in a binary grating of reasonable aspect ratio when the substrate has a refractive index notably smaller than the ridges.
- Published
- 2013