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1. A novel process to realize 4H-SiC nanowire arrays

Author

Maria Androulidaki, Maximilien Cottat, Antonios Stavrinidis, Cécile Gourgon, Camille Petit-Etienne, Edwige Bano, George Konstantinidis, Jumana Boussey, Konstantinos Zekentes, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Clot, Marielle

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

2. On the Optimum Determination and Use of SiC VJFET Threshold Voltage

Author

Konstantinos Zekentes, Nikolaos Makris, George Konstantinidis, Maria Kayambaki, Antonis Stavrinidis, Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110, Heraklion, Greece, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
010302 applied physics, Materials science, business.industry, Mechanical Engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Silicon Carbide (SiC), Threshold voltage, TI-VJFET, [SPI]Engineering Sciences [physics], Mechanics of Materials, 0103 physical sciences, Optoelectronics, Transfer Characteristics, General Materials Science, Threshold Voltage, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business
Abstract

The threshold voltage of SiC JFETs has been determined from transfer characteristics by employing methods commonly used in the case of MOSFETs. The extracted values have been compared with the value determined from the fitting of experimental transfer characteristics with the Schockley model equation. Moreover, the variation of the extracted threshold voltage values with respect to channel width has been employed to determine the channel concentration without taking into account the Vbi value.

Published
2018
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3. Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Author

Roxana Arvinte, Sandrine Juillaguet, Konstantinos Zekentes, Thierry Chassagne, Maria Kayambaki, Leszek Konczewicz, Hervé Peyre, Pawel Kwasnicki, Marcin Zielinski, Sylvie Contreras, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Semi-conducteurs: Graphène, Grand gap & Photovoltaïque (SMC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and NOVASiC

Subjects
010302 applied physics, Electron mobility, Range (particle radiation), Materials science, Mechanical Engineering, Doping, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 7. Clean energy, 01 natural sciences, Secondary Ion Mass Spectroscopy, chemistry, Electrical transport, Mechanics of Materials, Aluminium, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 0210 nano-technology
Abstract

In the range 80 K-900 K, we have investigated the electrical properties of heavily aluminum in-situ doped, 4H-SiC samples. The temperature dependence of the hole concentration and Hall mobility was analyzed in the model taking into account heavy and light holes. The modelisation parameters were compared with experimental values of Secondary Ion Mass Spectroscopy (SIMS) and Capacitance-Voltage (CV) measurements.

Published
2015
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4. Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs

Author

Konstantinos Zekentes, Giovanni Attolini, Ji Hoon Choi, Edwige Bano, Anne Henry, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Department of Physics, Chemistry and Biology [Linköping] (IFM), Linköping University (LIU), Istituto dei Materiali per l'Elettronica ed il Magnetismo [Genova] (IMEM-CNR), Consiglio Nazionale delle Ricerche (CNR), Institute of Electronic Structure and Laser (FORTH-IESL), Foundation for Research and Technology - Hellas (FORTH), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Materials science, Fabrication, NWFET, Transconductance, Nanowire, Nanotechnology, 02 engineering and technology, Dielectric, 01 natural sciences, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, law, 0103 physical sciences, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 3C-SiC, 010302 applied physics, business.industry, Mechanical Engineering, Transistor, Doping, [CHIM.MATE]Chemical Sciences/Material chemistry, Orders of magnitude (numbers), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Nanowires, Mechanics of Materials, Optoelectronics, Field-effect transistor, [PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph], 0210 nano-technology, business
Abstract

International audience; The until-now demonstrated SiC-Nanowire Field Effect Transistors (NWFETs) have exhibited poor performance due to the high residual doping of the NWs as well as the bad interface with the gate dielectrics. Top-down NWs have been used for the SiC NWFETs fabrication on the basis of low-doped 3C-SiC material and eliminating, thus, the first reason. The transistors with top-down grown NWs exhibited three orders of magnitude higher current and transconductance values with respect to SiC NWFETs with bottom-up grown NWs. Nevertheless, it was not possible to switch-off the transistors showing the importance of interface with the gate dielectrics.

Published
2015
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5. 4H-SiC VJFETs with Self-Aligned Contacts

Author

Mihai Lazar, Emmanouil Vassakis, Pierre Brosselard, Dominique Tournier, Antonis Stavrinidis, Nicolas Camara, Shi Qin Niu, Nicholas G. Wright, Konstantinos Vamvoukakis, Maria Kayambaki, Konstantin V. Vasilevskiy, Alton B. Horsfall, Konstantinos Zekentes, Dominique Planson, Matthias Bucher, George Konstantinidis, Newcastle University [Newcastle], Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS), Technical University of Crete [Chania], and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Electron mobility, Materials science, 02 engineering and technology, 01 natural sciences, law.invention, static-induction, Triode, law, self-aligned contacts, 0103 physical sciences, voltage gain, Breakdown voltage, General Materials Science, Lithography, 010302 applied physics, business.industry, Mechanical Engineering, Transistor, Direct current, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, JFET, Junction Field Effect Transistor (JFET), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Static Induction, Mechanics of Materials, Optoelectronics, 0210 nano-technology, business, Junction field effect transistors, AND gate
Abstract

Trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET) have been fabricated with self-aligned nickel silicide source and gate contacts using a process sequence that greatly reduces process complexity as it includes only four lithography steps. The effect of the channel geometry on the electrical characteristics has been studied by varying its length (0.3 and 1.2μm) and its width (1.5-5μm). The transistors exhibited high current handling capabilities (Direct Current density 330A/cm2). The output current reduces with the increase of the measurements temperature due to the decrease of the electron mobility value. The voltage breakdown exhibits a triode shape, which is typical for a static-induction transistor operation.

Published
2015
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6. Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC

Author

Maria Kayambaki, Maria Androulidaki, Jean Camassel, Hervé Peyre, Antonis Stavrinidis, Konstantinos Zekentes, Katerina Tsagaraki, Institute of Electronic Structure & Laser, Foundation for Research and Technology - Hellas (FORTH), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Peyre, Hervé

Subjects
Diffraction, Fabrication, Photoluminescence, Materials science, Annealing (metallurgy), Analytical chemistry, 02 engineering and technology, 01 natural sciences, law.invention, Secondary Ion Mass Spectroscopy, law, 0103 physical sciences, General Materials Science, ComputingMilieux_MISCELLANEOUS, Mercury probe, 010302 applied physics, business.industry, Mechanical Engineering, Transistor, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Ion implantation, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business
Abstract

The purpose of the present study is to determine the appropriate physical characterization methods for evaluating material quality changes during the fabrication steps of a typical 4H-SiC Static Induction Transistors (SITs). The most important fabrication step in terms of material quality is the gate implantation and post-implantation annealing. For the purposes of the initial investigation, separate “witness” samples from the processed sample have been used for evaluating implantation and post-implantation annealing. Secondary Ion Mass Spectroscopy (SIMS), optical transmission, room-temperature photoluminescence (RTPL), High Resolution X-Ray diffraction (HRXRD) and C-V measurements with Hg-probe and electrochemical (ECV) cells have been investigated in the frame of the present study. HRXRD and ECV have been proved particularly suitable for characterizing the implanted layers.

Published
2011

7. SiC nanowires: material and devices

Author

K. Rogdakis, Konstantinos Zekentes, Institute of Electronic Structure & Laser, and Foundation for Research and Technology - Hellas (FORTH)

Subjects
010302 applied physics, Materials science, Fabrication, Acoustics and Ultrasonics, Transistor, Composite number, Doping, Nanowire, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Characterization (materials science), Field electron emission, law, 0103 physical sciences, Physical Sciences, Field-effect transistor, 0210 nano-technology
Abstract

International audience; SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. Very low diameter (

Published
2011
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8. 3C-Silicon Carbide nanowire FET: An experimental and theoretical Approach

Author

K. Rogdakis, Sang-Kwon Lee, Edwige Bano, Konstantinos Zekentes, Marc Bescond, Seoung-Yong Lee, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Domenget, Chahla

Subjects
010302 applied physics, Materials science, business.industry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Transconductance, Doping, Nanowire, Nanotechnology, 02 engineering and technology, Dielectric, Chemical vapor deposition, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Ballistic conduction, 0103 physical sciences, Silicon carbide, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business
Abstract

Experimental and simulated I-V characteristics of silicon carbide (SiC) nanowire-based field-effect transistors (NWFETs) are presented. SiC NWs were fabricated by using the vapor-liquid-solid mechanism in a chemical vapor deposition system. The diameter of fabricated SiC NWs varied from 60 up to 100 nm while they were some micrometers long. Their I-V characteristics were simulated with SILVACO software, and special attention was paid to explore the role of NW doping level and NW/dielectric interface quality. The fabricated SiC-based NWFETs exhibit a mediocre gating effect and were not switched-off by varying the gate voltage. Based on the simulations, this is a result of the high unintentional doping (estimated at 1times1019 cm-3) and the poor NW/dielectric interface quality. Moreover, a homemade algorithm was used to investigate the ideal properties of SiC-based NWFETs in ballistic transport regime, with NW lengths of 5-15 nm and a constant diameter of 4 nm for which the carrier transport is fully controlled by quantum effects. This algorithm self-consistently solves the Poisson equation with the quantum nonequilibrium Green function formalism. In the ballistic regime, devices with undoped SiC NWs exhibit superior theoretical performances (transconductance: ~43.2times10-6 A/V and ION/IOFF=1.6times105 for a device with 9-nm NW length) based on their simulated characteristics.

Published
2008

9. Microwave modulators based on 4H-SiC p-i-n diodes

Author

Volodymyr V. Basanets, V.A. Kryvutsa, Konstantinos Zekentes, N. Camara, V.O. Orechovskij, Mykola S. Boltovets, V.I. Simonchuk, Edwige Bano, A.V. Zorenko, Domenget, Chahla, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Radiation, Materials science, business.industry, Transmission loss, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical engineering, Wide-bandgap semiconductor, 02 engineering and technology, Carrier lifetime, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Capacitance, Switching time, 0103 physical sciences, Insertion loss, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Microwave, ComputingMilieux_MISCELLANEOUS, Diode
Abstract

Multidiode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized for the first time. The diodes used for the modulator fabrication exhibited a blocking voltage of 1100 V, a 100-mA differential resistance of 1-3 Omega, a punch-through voltage (100 V) capacitance below 0.5 pF, and a carrier effective lifetime of 15 ns. The three-diode modulators are characterized by a transmission loss of 1-2 dB and isolation of 27-34 dB in the 2-7-GHz frequency range, while their switching speed is as low as 30 ns. Two-diode modulators were specially designed for high-temperature operation. These modulators are characterized by a transmission loss of 1.1-2.6 dB and isolation of 33-44.5 dB in the 2-7-GHz frequency range at temperatures up to 300degC.

Published
2008

10. Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes

Author

Konstantinos Zekentes, Marc Bescond, Edwige Bano, K. Rogdakis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institute of Electronic Structure and Laser (IESL), and Foundation for Research and Technology - Hellas (FORTH)

Subjects
Materials science, Nanowire, Bioengineering, Nanotechnology, 02 engineering and technology, 01 natural sciences, Ion, chemistry.chemical_compound, Condensed Matter::Materials Science, 0103 physical sciences, Silicon carbide, General Materials Science, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quantum, 010302 applied physics, business.industry, Mechanical Engineering, Wide-bandgap semiconductor, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Subthreshold slope, chemistry, Mechanics of Materials, Optoelectronics, Field-effect transistor, Poisson's equation, 0210 nano-technology, business
Abstract

International audience; Silicon carbide (SiC) nanowires (NWs) could combine the properties of one-dimensional (1D) structures with those of a wide band gap semiconductor. For this reason, we solved self-consistently the Poisson equation with both the quantum Non-Equilibrium Green Function Formalism (NEGF) and the classical drift–diffusion model in order to model and compare 3C-SiC and Si NW Field Effect Transistors (FETs) operating in ballistic and diffusive regimes. As a general conclusion from our calculations in the ballistic regime, Si and SiC NW FETs have almost the same electrical behavior. They show the same subthreshold slope and have similar on-current (ION/IOFF (SiC) ~81% ION/IOFF (Si) in the case of a 4 nm NW cross-section side). The drift–diffusion model predicts a better performance for SiC NW FETs. More specifically, SiC devices have a lower subthreshold slope (~85% for a Si device with 200 nm channel length) than Si devices as the FET channel length increases (from 200 to 750 nm), and as in case of ballistic regime SiC devices have a slightly smaller on-current.

Published
2007
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11. Photoemission of 4H-SiC pin diodes epitaxied by the sublimation method

Author

Nicolas Camara, Konstantinos Zekentes, Alexander A. Lebedev, Edwige Bano, Aurelie Thuaire, Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Domenget, Chahla

Subjects
Materials science, [INFO.INFO-TS] Computer Science [cs]/Signal and Image Processing, Photoemission microscopy, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 02 engineering and technology, Epitaxy, 01 natural sciences, Soft breakdown, law.invention, [INFO.INFO-TS]Computer Science [cs]/Signal and Image Processing, law, 0103 physical sciences, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.SIGNAL] Engineering Sciences [physics]/Signal and Image processing, 010302 applied physics, business.industry, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Mechanical Engineering, PIN diode, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Mechanics of Materials, Optoelectronics, Sublimation (phase transition), 0210 nano-technology, business, [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing
Abstract

4H-SiC pin diodes were fabricated on epitaxial layers grown by Sandwich Sublimation Method (SSM). I-V and photoemission measurements were conducted on these devices. These measurements show hot spots responsible for a soft breakdown and evidence triangular shape defects previously observed in 4H-SiC pin diodes made on CVD epitaxial layers. These results agree with the morphology studies which indicate that the SSM-grown layers have a higher number of structural defects than their counterparts.

Published
2006

12. Room‐temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates

Author

Konstantinos Zekentes, Gérard Guillot, S. Monéger, G. Halkias, Alexandros Georgakilas, C. Bru, A. Tabata, BRU CHEVALLIER, Catherine, Laboratoire de physique de la matière (LPM), Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institute of Electronic Structure and Laser (FORTH-IESL), and Foundation for Research and Technology - Hellas (FORTH)

Subjects
010302 applied physics, Photoluminescence, Materials science, Physics and Astronomy (miscellaneous), business.industry, [SPI] Engineering Sciences [physics], 02 engineering and technology, Crystal structure, [SPI.MAT] Engineering Sciences [physics]/Materials, 021001 nanoscience & nanotechnology, 01 natural sciences, Optical reflection, [SPI.MAT]Engineering Sciences [physics]/Materials, Laser linewidth, [SPI]Engineering Sciences [physics], Optics, Material quality, 0103 physical sciences, Optoelectronics, Modulation spectroscopy, Thin film, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Molecular beam epitaxy
Abstract

Photoreflectance and photoluminescence experiments have been performed on molecular beam epitaxy (MBE) grown InAlAs layers lattice matched to InP substrates in order to evaluate the influence of the growth temperature on the crystalline quality of this material. The study of the photoreflectance broadening parameter at room temperature provides the same indication on crystalline quality as the well‐known linewidth broadening of the photoluminescence at cryogenic temperatures. We show that the best material quality is obtained for the MBE growth temperature of 530 °C.

Published
1993

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