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TaC/a-C:H films with varying carbon content within a narrow window were deposited employing HiPIMS in the Ar/C2H2 atmosphere. The DC deposited TaC/a-C:H reference films were prepared under the same deposition parameters for comparison. Analysis and comparison of the chemical bonding state, structure, mechanical and tribological properties, and oxidation resistance of the films were conducted, with the aim of emphasizing the differences in the nanocomposite structure and properties of the films correlated to deposition conditions. It reveals that the HiPIMS deposited TaC/a-C:H films outperform the DC deposited ones, exhibiting higher hardness and toughness, lower friction coefficient and wear rate, and stronger oxidation resistance. The improved performances in HiPIMS are attributed to HiPIMS plasma, which enables (i) the volume fraction of crystalline TaC phase and amorphous carbon phase, (ii) the stoichiometric ratio and grain size of the crystalline phase, (iii) the sp2/sp3 –C ratio, and (iv) the residual stress to develop in the manner that is conducive to film properties. It is demonstrated that HiPIMS plasma can be used as an effective means to modulate the chemical bonding state and nanocomposite structure of TaC/a-C:H film for achieving higher performance in terms of hard yet tough, wear and oxidation resistance.

Lanthanum perovskites are promising candidates to replace platinum group metal (PGM), especially regarding catalytic oxidation reactions. We have prepared thin catalytic coatings of Sr and Ag doped lanthanum perovskite by using the cathodic co-sputtering magnetron method in reactive condition. Such development of catalytic films may optimize the surface/bulk ratio to save raw materials, since a porous coating can combine a large exchange surface with the gas phase with an extremely low loading. The sputtering deposition process was optimized to generate crystallized and thin perovskites films on alumina substrates. We found that high Ag contents has a strong impact on the morphology of the coatings. High Ag loadings favor the growth of covering films with a porous wire-like morphology showing a good catalytic activity for CO oxidation. The most active composition displays similar catalytic performances than those of a Pt film. In addition, this porous coating is also efficient for CO and NO oxidation in a simulated Diesel exhaust gas mixture, demonstrating the promising catalytic properties of such nanostructured thin sputtered perovskite films. Fil: Arab Pour Yazdi, Mohammad. Universite de Bourgogne; Francia Fil: Lizarraga, Leonardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Parque Centenario. Centro de Investigaciones en Bionanociencias "Elizabeth Jares Erijman"; Argentina. Universite Claude Bernard Lyon 1. Institut de Physique Nucléaire de Lyon.; Francia. Universite Lyon 2; Francia Fil: Vernoux, Philippe. Universite Claude Bernard Lyon 1. Institut de Physique Nucléaire de Lyon.; Francia. Universite Lyon 2; Francia Fil: Billard, Alain. Universite de Bourgogne; Francia Fil: Briois, Pascal. Universite de Bourgogne; Francia

International audience; Mg-Sn thin films (21 ≤ at. % Sn ≤ 42.5) were deposited by magnetron sputtering in the argon atmosphere. The structure and morphology of the films were characterized as a function of the composition. Mg2Sn structure was changed from stable face-centered cubic to metastable orthorhombic structure while the content of Sn in the films increased. The influence of this structural modification on thermoelectric properties was discussed in a wide range of temperatures (30–200 °C). The film carrier concentration and mobility were measured to explain the electronic transport behavior as a function of the film structural modifications. The maximum figure of merit ZT ≈ 0.26 at 200 °C was reached for the film with 36 at. % Sn while a mixture of cubic and orthorhombic Mg2Sn structures coexisted. An annealing treatment was performed under vacuum (∼10−4 Pa) at different temperatures (up to 600 °C) to determine the limit of structural and morphological stability of this film.

International audience; Tungsten oxide thin films exhibiting an oriented columnar architecture were prepared by reactive co-sputtering. Two opposite W and WO3 targets focused on the center of the substrate were simultaneously sputtered using opposite and oblique angles of 80° from the substrate normal. The reactive gas pulsing process was used to adjust the films electrical resistivity. Different inclined columnar structures were produced and applied as gas sensors for dodecane detection. Morphology, structure and resistivity of the films were investigated and connected to the sensing performances measured from 373 to 773 K.

International audience; Hydrogen solid storage in intermetallic compounds has attracted great attention in the recent decades; TiFe-basedmetal hydride is one of the most important candidate materials to hold atomic hydrogen because of its significant storage capacity (about 1.9 wt. %) and its moderate operating pressure and temperature. The main hindrance to an effective and large use of this metal forming hydride is the difficult activation process i.e. the initial hydriding attempt. In this paper an experimental study about the first hydrogenation process of TiFe0.9Mn0.1 is carried out with a Sievert apparatus. At first, powder fabrication protocol then materials and methods used for the experimental characterizations are described. Secondly, a literature survey is presented about the activation processes of TiFe based alloys. Finally experimental results, discussions and conclusions are exposed. Those results lead to a comparison between the hydrogenation behaviors of two TiFe0.9Mn0.1 powder types: the ‘as received’ powder and the same powder after a thermo-chemical treatment. A wide improvement in the hydrogen activation response is noticed when the powder is submitted to this thermo-chemical treatment under specific operating conditions of gas pressure, temperature and time-duration. Plotted PCI curves and XRD patterns demonstrate that the material bulk is not affected by this thermo-chemical treatment. Then, the operating conditions are optimized, and SEM visualizations are performed in order to point out the effects of the treatment on the surface properties of TiFe0.9Mn0.1 particles. At the end, a conclusion summarizes the main results and outlines the perspectives of such thermo-chemical treatment.

International audience; wo series of W-Cu thin films were developed by the GLAD co-sputtering technique. The films were produced with two separated W and Cu targets. Both targets were focused on the centre of the substrate and were simultaneously sputtered using opposite and oblique angles of 80° from the substrate normal. In the first series, the W and Cu target currents were inversely changed from 50 to 140. mA in order to tune the elemental concentrations and the microstructure. For the second series, a shield was added between W and Cu targets, perpendicularly to the substrate surface in order to prevent the cross-contamination of the targets. The target currents were varied similarly to the first series. Two argon sputtering pressures were used (0.42 and 1.0. Pa) in each series, with and without the shield.Microstructure showed a tuneable inclined columnar microstructure, which become normal to the substrate at high pressure. The crystallographic structure was not significantly influenced by the shield implementation but rather by the sputtering pressure. The W/Cu atomic concentration ratio varied between 0.2 and 5.5 as a function of the sputtering pressure and target currents and an anisotropic chemical composition was measured inside the columns. The wide range of DC electrical resistivities (3.6×10⁻⁷ to 5.7×10⁻⁵ Ωm) was discussed considering W and Cu target currents, high and low sputtering pressures and the use of a cross-contamination shield. The role of the microstructure was clearly shown since significantly higher resistivity was obtained at high pressure, as a function of the W/Cu atomic concentration ratio. W-Cu sputtered thin films grown at... (PDF Download Available). Available from: https://www.researchgate.net/publication/320080270_W-Cu_sputtered_thin_films_grown_at_oblique_angles_from_two_sources_Pressure_and_shielding_effects [accessed Apr 09 2018].

Mg&ndash, Si thin films (23 &le, at.% Si &le, 43) were deposited by co-sputtering of Mg and Si targets in an argon atmosphere. Two groups of samples were prepared with respect to sputtering parameters. The first Group I was synthesized while residual pressure in the reactor was lower than 7 &times, 10&minus, 4 Pa and the second Group II when reactor was pumped down to pressure higher than 7 &times, 4 Pa. The Mg2Si phase appeared for all as-deposited films of Group I around the stoichiometric composition region (29 &le, 37) and in the Mg-rich region (at.% Si &lt, 29) the Mg2Si and Mg phases coexisted. An amorphous structure was obtained for all as-deposited films of Group II no matter their composition (34 &le, 38) and the Mg2Si structure was achieved after post annealing under air at temperature &ge, 140 &deg, C. Thermal stability of Mg2Si thin films was investigated by annealing treatments under air. Superficial Mg2Si structural decomposition began at T &gt, 500 &deg, C and layer morphology and structure damaged while annealing temperature increased up to 700 &deg, C. The films&rsquo, electrical resistivity, free carrier concentration and mobility as well as Seebeck coefficient were measured and thermoelectric power factors were discussed vs. composition.

International audience; In this study, an irreversible Diesel cycle is investigated based on entransy method and optimization conducted by considering various scenarios. Entransy expressed as a heat transfer potential of a subject and it has begun to investigate as a new thermodynamic assessment parameter. This paper presents thermodynamical study of an irreversible Diesel cycle in order to optimize its performance. Moreover, four different strategies in the process of multiobjective optimization are proposed, and the outcomes are assessing separately. The first strategy is proposed to minimize the entransy dissipation rate and maximize the ecological coefficient of performance along with the maximum available work. Furthermore, the second one is suggested to minimize the entransy dissipation rate and maximize the ecological function along with the exergetic performance criteria. The third strategy is proposed to minimize ethe entransy dissipation rate and maximize the ecological function along with the thermal efficiency. Moreover, the fourth strategy is suggested to achieve the minimum entransy dissipation rate and maximum ecological function along with the entransy efficiency. Finally, the values of objective functions were obtained at the optimum conditions of each scenario; afterwards, compared with other scenarios to select the most appropriate one. Based on obtained results, maximizing ecological coefficient of performance is the most appropriate approach for optimization, since it leads to the maximum values of ecological function, exergetic performance criteria and thermal efficiency. In addition, in the fourth scenario the lowest entransy dissipation rate was achieved. © 2017 American Institute of Chemical Engineers Environ Prog, 2017

CuCr 0.93 Mg 0.07 O 2 thin films were successfully deposited by DC reactive magnetron sputtering at 1123 K from metallic targets. The influence of film thickness on the structural and optoelectronic properties of the films was investigated. X-ray diffraction (XRD) results revealed that all the films had a delafossite structure with no other phases. The optical and electrical properties were investigated by UV–VIS spectrophotometer and Hall measurement, respectively. It was found that the optoelectronic properties exhibited a thickness-dependent behavior. The optical band gap and the average transmittance of the films showed a monotonous decrease with respect to the increase in thickness. The average transmittance in the visible region decreased from 67% to 47% as the thickness increased from ~70 nm to ~280 nm. Simultaneously, the conductivity of the films fell from 1.40 S∙cm −1 to 0.27 S∙cm −1 . According to Haacke's figure of merit (FOM), a film with a maximum FOM value of about 1.72×10 −7 Ω −1 can be achieved when the thickness is about 70 nm (σ≈ 1.40 S·cm −1 and T av. ≈67%).

Cu x O thin films were deposited on glass and silicon substrates by High Power Impulse Magnetron Sputtering (HiPIMS) at room temperature from a metallic copper target. The influence of pulse off-time on the films’ structural, morphological and optoelectronic properties was investigated. It was found that the power intensity applied on the Cu target was strongly affected by pulse off-time, which had an important impact on the films’ composition. Upon increasing the pulse off-time from 500 μs to 3500 μs (pulse on-time fixed at 50 μs), the films’ crystallinity as well as transmittance in the visible region both ameliorate. Meanwhile, the conductivity type changed from n-type to p-type as the films’ composition changed. When the pulse off-time was fixed at 2000 μs, the optimal p-type conductivity of about 3 S × cm −1 was achieved, which is the highest p-type conductivity reported for Cu 2 O films in the last few years. The transition of the films’ conductivity type can be utilized for the fabrication of Cu 2 O-based p-n homojunction, and may also prove useful in developing other oxide films by using HiPIMS technology.

International audience; The optoelectronic properties of Mg-doped CuCrO2 with delafossite structurewere enhanced by stacking CuCr0.93Mg0.07O2/Ag/CuCr0.93Mg0.07O2 multilayers.The influences of the deposition time of the Ag and the thickness of theCuCr0.93Mg0.07O2 layers on the film’s performance were investigated. When thestacks were deposited under our deposition conditions, no continuous Ag layerwas observed. The diffusion of Ag atoms into the neighboring CuCr0.93Mg0.07O2layers caused a composition gradient of Ag in the films and caused Cr3? cationsto be replaced by Ag? cations, which is beneficial for improving the conductivityof the films. When the Ag deposition time was increased, Schottky barriersoccurred between Ag nanocrystallites and CuCr0.93Mg0.07O2 grains, loweringthe films’ optoelectronic performances. The multilayers’ optoelectronic performanceswere enhanced when the thickness of the CuCr0.93Mg0.07O2 layers wasdecreased. Optimal films with a relatively high figure of merit of2.37 9 10-7 X-1 can be achieved when the deposition time of Ag and thethickness of CuCrO2:Mg layers are optimized.

International audience; W-Cu thin films were co-deposited by magnetron sputtering using the glancing angle deposition (GLAD) method. The deposition angle of W and Cu targets was fixed at 80°, and their currents were inversely and systematically changed from 50 to 140 mA. Scanning electron microscopy, X-ray fluorescence spectroscopy, and X-ray diffraction were used to investigate the morphology and the elemental composition of the films. Electrical properties were also studied by the van der Pauw technique. An increase of the W target current and a decrease of the Cu target produced an improvement of the inclined columnar and porous structure. The W-to-Cu weight concentration ratio was tuned from 0.68 up to 19. Wsingle bondCu films exhibited a diffracted signal corresponding to the (100) planes of the bcc tungsten structure for the highest W current intensities whereas the (111) peak due to the fcc copper phase was measured when the Cu target current increased. The dc electrical resistivity measured at room temperature was gradually changed from 3.59 × 10− 7 up to 9.90 × 10− 6 Ωm by means of an inverse variation of W and Cu target currents. The Cu-rich films exhibited a non-reversible resistivity vs. temperature evolution due to thermal oxidation whereas those co-sputtered with the highest W target currents showed a sudden increase of resistivity when the temperature was above 400 K.

International audience; The present study describes a sputtering and in situ vacuum electrical resistivity setup that allows a more efficient sputtering-oxidation coupling process for the fabrication of oxide compounds like vanadium dioxide, VO2. After the sputtering deposition of pure V thin films, the proposed setup enables the sample holder to be transferred from the sputtering to the in situ annealing + resistivity chamber without venting the whole system. The thermal oxidation of the V films was studied by implementing two different temperature cycles up to 550 °C, both in air (using a different resistivity setup) and vacuum conditions. Main results show that the proposed system is able to accurately follow the different temperature setpoints, presenting clean and low-noise resistivity curves. Furthermore, it is possible to identify the formation of different vanadium oxide phases in air, taking into account the distinct temperature cycles used. The metallic-like electrical properties of the annealed coatings are maintained in vacuum whereas those heated in air produce a vanadium oxide phase mixture.

There are demands to form nanolayered coating consisting of different materials in order to enhance the coating mechanical properties. However, poor structure control may lead to the formation of second phase and various defects. In this work, we endeavored to use cathodic arc deposition (CAD) method to fabricate TiN/Ti X Al 1 − X N nanolayered coatings with periods (Λ) ranging from 8 to 45 nm, which has great influences on coating microstructures and properties. X-ray diffraction (XRD), electron microscopy, nanoindentation and tribometry were employed to correlate coating microstructure and Λ with mechanical properties and wear resistance. The nanolayered coatings consisted of columnar grains with [111] texture, where individual grains contained low-angle grain boundaries without voids and amorphous phases. As Λ decreased, superlattices were generated, and reducing Λ from 45 nm to 13 nm yielded coatings with superior mechanical properties. The hardness peaked at 38.9 ± 3.6 GPa with a Young's modulus at 502.5 ± 40.4 GPa at 13 nm, however, when the Λ decreased to 8 nm the hardness and the Young's modulus deteriorated. It was concluded that wear resistance improved as the Λ decreased due to the greater interface population that impedes crack propagation.

Herein, a novel method of high-power impulse magnetron sputtering (HiPIMS) was used to prepare Cu2O thin films, which were deposited at ambient temperature without further thermal treatment. The films with varying optoelectronic properties as a function of oxygen flow ratio ( f O 2 ) were investigated. The results demonstrate that the film's performances are dependent on the film's composition and their crystallinity, which is influenced by the oxygen flow ratio. Cu2O-dominated films were fabricated in the oxygen flow range between 12.5% and 35%, whose values were used to determine their optoelectronic properties. Consequently, the films optoelectronic properties can be controlled by adjusting oxygen flow ratio. At low oxygen flow ratio ( f O 2 ≤ 10%), Cu-dominated films present n-type conductivity. With oxygen flow ratio increasing to above 15%, the films conductivity type changes from n-type to p-type due to the majority phase in the films changing from Cu to Cu2O. Meanwhile, the film's transmittance improves significantly from 0.28% for f O 2 of 2.5% to the maximum value of 58.77% for f O 2 of 30% resulting from the phase's transition upon increasing the oxygen flow ratio. When the oxygen flow ratio is at about 20%, a Cu2O film with optimal p-type conductivity of approximately 0.4 S × cm−1 is achieved at room temperature, which is the highest p-type conductivity reported in Cu2O film for the last few years.

International audience; Cu-Cr-O thin films were co-sputtered from metallic Cu and Cr targets in the presence of a reactive argon-oxygen gas mixture. Evolution of the coatings composition as a function of the discharge current dissipated on each target allowed to obtain convenient composition. The films deposited at ambient temperature (without intentional heating of substrate) were initially amorphous and need to be annealed at different temperature under vacuum to achieve delafossite structure. In this case, the delafossite structure presented a thermal instability to the annealing temperature. CuCr2O4 and CuO as the secondary phases were clearly detected by XRD analysis, and could evidently affect the CuCrO2 films optoelectronic properties. Cu-Cr-O thin films were also deposited at high temperatures (substrate temperature varied from 923 to 1083 K) to investigate the influence of substrate temperature on the structure, morphology and optoelectronic properties of the films. Relatively, raising the substrate temperature up to 1033 K was better to obtain CuCrO2 delafossite phase and improved their optoelectronic properties. The optimum conductivity and transparency were achieved for the film deposited at about 1033 K with figure of merit of 6.18 x 10(-13) Omega(-1) (sigma approximate to 1.34 x 10(-2) S cm(-1) and the maximum visible transmittance up to 43%).

International audience; The DC reactive magnetron sputtering of a metallic tungsten target was performed in an argon + oxygen atmosphere for depositing tungsten oxide thin films. In order to control the oxygen concentration in the films, the reactive gas pulsing process, namely RGPP, was implemented. Rectangular pulses were used with a constant pulsing period T = 16 s whereas the duty cycle α (time of oxygen injection to pulsing period T ratio) was systematically changed from 0 to 100% of T. This pulsing injection of the reactive gas allowed a gradual evolution of the films composition from pure metallic to over-stoichiometric WO3+ɛ’ compounds. These WOx films were sputter deposited on commercial MSP 769 Heraeus platforms so as to be used as a sensor for the dodecane gas. It is shown that the sensing performances carried out at 573 K can be adjusted as a function of the duty cycle used during the deposition stage. The relationship between sensing properties and physic-chemical behaviours of the films was especially discussed.

High entropy alloys form a new branch of material science since their first definition by Yeh et. al. in 2004. Coatings made from high entropy alloy nitrides (HEAN) show interesting properties for the machining field, especially regarding hardness and oxidation resistance. In this study, the mechanical properties and oxidation resistance of HEAN coatings (AlCrTiV)N, (AlCrTiZr)N, (AlCrVZr)N and (AlTiVZr)N synthetized through cathodic arc deposition with various bias voltage are investigated. All coatings are solid solutions, monophasic for (AlCrTiV)N and biphasic with a ZrN phase for the others, with FCC structures textured along the (111) plans. (AlTiVZr)N coatings show the lowest oxidation resistance with important scaling at 600 °C and (AlCrTiV)N coatings show the highest up to 800 °C. The highest hardness value is reached by all four HEAN compositions around 40 GPa. The lowest friction coefficient is 0.44 and reached by the (AlCrTiV)N coating deposited at 100 V while the lowest wear rate is 2.6 . 10⁻⁷ mm³.N⁻¹.m⁻¹ reached by the (AlCrVZr)N coating deposited at 150 V. Theses mechanical properties slightly decrease avec annealing at 600 °C for 2 hours in air, the bulk of most samples reaching a hardness of 34 GPa. The HEAN coatings, especially (AlCrTiV)N and (AlCrVZr)N, show interesting properties for the machining industry. A prototype of a compact cathodic arc sputtering machine is also developed in this study. The development stages as well as the multilayered TiN/TiAlN coatings synthesized in this prototype with various configurations are also investigated and show promising results for small scale machining coatings quick deposition.; Les alliages à haute entropie forment un nouveau pan de la science des matériaux depuis leur définition par Yeh et. al. en 2004. Les revêtements en nitrure d'alliage à haute entropie (HEAN) présentent des propriétés, notamment en termes de dureté et de résistance à l'oxydation, particulièrement intéressantes pour le milieu de l'usinage. Dans cette étude, les propriétés mécaniques et la résistance à l'oxydation des revêtements HEANs (AlCrTiV)N, (AlCrTiZr)N, (AlCrVZr)N et (AlTiVZr)N déposés par évaporation par arc cathodique à différentes tensions de polarisation sont investiguées. Les revêtements sont des solutions solides de structures CFC texturées selon les plans (111), monophasée pour (AlCrTiV)N et biphasée avec une phase de ZrN dans les autres. Des quatre compositions, seuls les revêtements (AlTiVZr)N présentent une faible résistance à l'oxydation avec un écaillage important dès 600 °C. A l'inverse, les revêtements (AlCrTiV)N présentent une grande résistance à l'oxydation jusqu'à 800 °C. Les quatre HEANs atteignent une dureté maximal d'environ 40 GPa. Le coefficient de frottement le plus bas est 0,44, atteint par l'échantillon (AlCrTiV) déposé à 100 V de tension de polarisation et le taux d'usure le plus faible est 2,6 .10⁻⁷ mm³.N⁻¹.m⁻¹, atteint par l'échantillon (AlCrVZr)N déposé à 150 V. Ces propriétés mécaniques diminuent faiblement après un recuit à 600 °C sous air pendant 2 heures, la dureté à l'intérieur de la majorité des revêtements atteignant 34 GPa. Les HEANs (AlCrTiV)N et (AlCrVZr)N, en particulier, peuvent être intéressant pour le milieu de l'usinage. Un prototype de machine compacte de dépôt par évaporation par arc cathodique est également développé. Les étapes du développement et les revêtements multicouches TiN/TiAlN déposés dans ce prototypes en faisant varier sa configuration sont également investigués et forment une preuve de concept pour le dépôt rapide à petite échelle de revêtements pour l'usinage.

This thesis is focused on the reactive sputter deposition of W-O thin films. In order to play with their composition, the Reactive Gas Pulsing Process (RGPP) is implemented and allows tunable oxygen and tungsten concentrations. Similarly, the GLancing Angle Deposition (GLAD) technique is developed to produce various architectures, namely inclined columns, zigzags and spirals, and increases the surface-to-volume ratio of the films. The GLAD co-sputtering approach is also investigated by means of two inclined and separated W and WO3 targets. Relationships between microstructure, composition, electronic and optical properties of W-O films are systematically studied. They are finally applied as active layers for resistive sensors in order to improve detection of dodecane vapor and ozone gas. The high porous microstructure of inclined columns produced by GLAD combined to the suitable composition adjusted by RGPP leads to define a range of W-O films attractive for sensing performances.; Cette thèse est dédiée à l’élaboration de couches minces d'oxydes de tungstène par pulvérisation cathodique réactive. Afin de jouer sur la composition des films, le procédé de pulsation du gaz réactif (RGPP) est mis en œuvre pour changer les concentrations en oxygène et en tungstène. En parallèle, la technique de dépôt sous incidence oblique (GLAD) est développée pour produire différentes architectures, à savoir des colonnes inclinées, des zigzags ou encore des spirales, et augmenter le rapport surface-volume dans les films. La co-pulvérisation GLAD est également étudiée en utilisant deux cibles inclinées et séparées de W et WO3. Les relations entre la microstructure, la composition, les propriétés électroniques et optiques des films d'oxydes de tungstène sont systématiquement étudiées. Ils sont finalement appliqués comme couches actives pour des capteurs résistifs afin d'améliorer la détection de vapeur de dodécane et d'ozone gazeux. La microstructure poreuse élevée des colonnes inclinées produite par GLAD combinée à une composition ajustée par RGPP conduit à définir une gamme de films d'oxydes de tungstène attractifs pour améliorer les performances capteurs.

This thesis is focused on the reactive sputter deposition of W-O thin films. In order to play with their composition, the Reactive Gas Pulsing Process (RGPP) is implemented and allows tunable oxygen and tungsten concentrations. Similarly, the GLancing Angle Deposition (GLAD) technique is developed to produce various architectures, namely inclined columns, zigzags and spirals, and increases the surface-to-volume ratio of the films. The GLAD co-sputtering approach is also investigated by means of two inclined and separated W and WO3 targets. Relationships between microstructure, composition, electronic and optical properties of W-O films are systematically studied. They are finally applied as active layers for resistive sensors in order to improve detection of dodecane vapor and ozone gas. The high porous microstructure of inclined columns produced by GLAD combined to the suitable composition adjusted by RGPP leads to define a range of W-O films attractive for sensing performances.; Cette thèse est dédiée à l’élaboration de couches minces d'oxydes de tungstène par pulvérisation cathodique réactive. Afin de jouer sur la composition des films, le procédé de pulsation du gaz réactif (RGPP) est mis en œuvre pour changer les concentrations en oxygène et en tungstène. En parallèle, la technique de dépôt sous incidence oblique (GLAD) est développée pour produire différentes architectures, à savoir des colonnes inclinées, des zigzags ou encore des spirales, et augmenter le rapport surface-volume dans les films. La co-pulvérisation GLAD est également étudiée en utilisant deux cibles inclinées et séparées de W et WO3. Les relations entre la microstructure, la composition, les propriétés électroniques et optiques des films d'oxydes de tungstène sont systématiquement étudiées. Ils sont finalement appliqués comme couches actives pour des capteurs résistifs afin d'améliorer la détection de vapeur de dodécane et d'ozone gazeux. La microstructure poreuse élevée des colonnes inclinées produite par GLAD combinée à une composition ajustée par RGPP conduit à définir une gamme de films d'oxydes de tungstène attractifs pour améliorer les performances capteurs.