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29 results on '"Paul L. Voss"'

1. Design and fabrication process flow for high-efficiency and flexible InGaN solar cells

Author: Rajat Gujrati, Soufiane Karrakchou, Lucas Oliverio, Suresh Sundaram, Paul L. Voss, Eva Monroy, Jean Paul Salvestrini, Abdallah Ougazzaden, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Georgia Institute of Technology [Atlanta], Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), and ANR-22-CE51-0009,FLEXIGAN,Croissance sélective de GaN sur hBN structuré pour le transfert de MEMS sur substrats souples(2022)
Subjects: Biomaterials, [PHYS]Physics [physics], [SPI]Engineering Sciences [physics], Condensed Matter Physics, Electronic, Optical and Magnetic Materials
Abstract: International audience
Published: 2023
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2. Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

Author: Karim Bouzid, Jean-Paul Salvestrini, Vishnu Ottapilakkal, Soufiane Karrakchou, Hibat E. Adjmi, Ali Ahaitouf, Paul L. Voss, Adama Mballo, Rajat Gujrati, Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Gilles Patriarche, Walid El Huni, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), ANR Labex Ganex, ANR INMOST, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), and ANR-19-CE08-0025,INMoSt,Cellules solaires multi-jonctions multi-fils à base de nano-pyramides d'InGaN(2019)
Subjects: Materials science, One-Step, 02 engineering and technology, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], vertical thin-film LEDs, law, Transfer (computing), 0103 physical sciences, Materials Chemistry, Electrochemistry, 010302 applied physics, business.industry, van der Waals epitaxy, free-standing III-N membranes, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Lift (force), 2D h-BN, flexible III-N optoelectronics, Optoelectronics, thermomechanical self-lift-off and transfer, 0210 nano-technology, business, Light-emitting diode
Abstract: International audience; We demonstrate the fabrication of vertical InGaN light-emitting diodes (LEDs) on large-area free-standing membranes, using a mechanical lift-off technique enabled by 2D h-BN. 30 μm-thick electroplated copper deposited on the epilayer (i) gives rigidity to the structure, preventing crack generation, (ii) functions as a back mirror and as a heat sink, and (iii) enables one-step self-lift-off and transfer of LED structures from h-BN/sapphire during a thermal treatment at 100 °C. Free-standing arrays of LEDs on thick membranes were processed and their electro-optical performance was characterized. This approach can provide a solution for the fabrication of low-cost, wafer scale, crack-free, and highly reproducible free-standing arrays of vertical LEDs with up to centimeter-size areas.
Published: 2021
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3. Side-by-side comparison of pre- and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates

Author: Soufiane Karrakchou, Ashutosh Srivastava, Paul L. Voss, Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Adama Mballo, Ali Ahaitouf, Rajat Gujrati, Jean-Paul Salvestrini, Taha Ayari, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), ANR INMOST, and ANR-19-CE08-0025,INMoSt,Cellules solaires multi-jonctions multi-fils à base de nano-pyramides d'InGaN(2019)
Subjects: Materials science, Fabrication, Hexagonal boron nitride, 02 engineering and technology, 01 natural sciences, law.invention, 010309 optics, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Pre and post, Boron, 3D metrology, business.industry, Adhesion, Measurement devices, 021001 nanoscience & nanotechnology, Light emitting diodes, Sapphire, Heterojunctions, Optoelectronics, Materials processing, 0210 nano-technology, business, Material characterization, Layer (electronics), Light-emitting diode
Abstract: International audience; We present a critical study of LEDs on h-BN compared to the conventional LEDs on sapphire from materials characterizations, device fabrication to the device performances measurements performed before and after liftoff and transfer with and without intermediary adhesion layer to arbitrary substrates.
Published: 2021
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4. Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN

Author: Paul L. Voss, Abdallah Ougazzaden, Simon Gautier, Tarik Moudakir, Ali Ahaitouf, Gilles Patriarche, Phuong Vuong, Jean-Paul Salvestrini, Adama Mballo, Ashutosh Srivastava, Suresh Sundaram, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), ANR Labex Ganex, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), and ANR-10-EQPX-0050,TEMPOS,Microscopie electronique en transmission sur le plateau Palaiseau Orsay Saclay(2010)
Subjects: Materials science, Photodetector, 02 engineering and technology, Substrate (electronics), Nitride, Field effect transistors, Optoelectronic devices, 01 natural sciences, law.invention, 010309 optics, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Metalorganic vapour phase epitaxy, business.industry, Sensors, Photodetectors, Heterojunction, 021001 nanoscience & nanotechnology, Light emitting diodes, chemistry, Boron nitride, Heterojunctions, Optoelectronics, Photonics, 0210 nano-technology, business, Light-emitting diode, Epitaxy
Abstract: International audience; Combined photonic and electronic systems require diverse devices to be co-integrated on a common platform. This heterogeneous integration is made possible through several separation and transfer methods where the functioning epilayers are essentially released from their growth substrate. The use of 2D layered h-BN as a mechanical release layer has been demonstrated to be a promising technique for the hybrid integration of III-nitride devices. In this talk we will give an overview of our results on wafer-scale van der Waals epitaxy by MOVPE of different III-N heterostructure devices such as LEDs, HEMTs, solar cells, sensors and photodetectors. Furthermore, mechanical release and transfer techniques of crack-free III-N devices on foreign substrates will be presented along with a comparison between the device performances before and after transfer.
Published: 2021
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5. Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Author: Simon Gautier, Soufiane Karrakchou, Ali Ahaitouf, Phuong Vuong, Tarik Moudakir, Gilles Patriarche, Rajat Gujrati, Ashutosh Srivastava, Suresh Sundaram, Thierry Leichle, Taha Ayari, Adama Mballo, Jean-Paul Salvestrini, Paul L. Voss, Abdallah Ougazzaden, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Équipe Microsystèmes électromécaniques (LAAS-MEMS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, ANR Labex Ganex, ANR Inmost (AAP 2019), ANR-19-CE08-0025,INMoSt,Cellules solaires multi-jonctions multi-fils à base de nano-pyramides d'InGaN(2019), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: Materials science, Silicon, Science, chemistry.chemical_element, 02 engineering and technology, Dielectric, Epitaxy, Two-dimensional materials, 01 natural sciences, Article, law.invention, symbols.namesake, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Electronic devices, 010302 applied physics, Multidisciplinary, business.industry, 021001 nanoscience & nanotechnology, chemistry, Sapphire, symbols, Medicine, Optoelectronics, Photonics, van der Waals force, 0210 nano-technology, business, Layer (electronics), Light-emitting diode
Abstract: Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with openings slightly larger than device sizes, pick-and-place of discrete LEDs onto flexible substrates was achieved. A more detailed study is needed to understand the effect of this selective area growth on material quality, device performance and device transfer. Here we present a study performed on two types of LEDs (those grown on h-BN on patterned and unpatterned sapphire) from the epitaxial growth to device performance and thermal dissipation measurements before and after transfer. Millimeter-size LEDs were transferred to aluminum tape and to silicon substrates by van der Waals liquid capillary bonding. It is shown that patterned samples lead to a better material quality as well as improved electrical and optical device performances. In addition, patterned structures allowed for a much better transfer yield to silicon substrates than unpatterned structures. We demonstrate that SAVWE, combined with either transfer processes to soft or rigid substrates, offers an efficient, robust and low-cost heterogenous integration capability of large-size devices to silicon for photonic and electronic applications.
Published: 2020
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6. Single crystalline boron rich B(Al)N alloys grown by MOVPE

Author: K. Krishnan, N. Y. Sama, Jean-Paul Salvestrini, Phuong Vuong, Gilles Patriarche, Yacine Halfaya, Abdallah Ougazzaden, Paul L. Voss, Simon Gautier, Adama Mballo, Soufiane Karrakchou, Taha Ayari, Suresh Sundaram, Ashutosh Srivastava, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), ANR Labex Ganex, LUE, KAUST, ANR-15-IDEX-0004,LUE,Isite LUE(2015), and ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
Subjects: Materials science, Physics and Astronomy (miscellaneous), Scanning electron microscope, Alloy, Energy-dispersive X-ray spectroscopy, Analytical chemistry, chemistry.chemical_element, Morphology studies, 02 engineering and technology, engineering.material, Epitaxy, 01 natural sciences, [SPI]Engineering Sciences [physics], 0103 physical sciences, Alloys, Metalorganic vapour phase epitaxy, Boron, Wurtzite crystal structure, Energy dispersive X-ray spectroscopy, 010302 applied physics, Optical electronics, 021001 nanoscience & nanotechnology, Secondary ion mass spectroscopy, High resolution X-ray diffraction, chemistry, Transmission electron microscopy, engineering, 0210 nano-technology, Scanning electron microscopy
Abstract: International audience; Boron rich BAlN alloys have been grown on 2-inch sapphire substrates by Metal-Organic Vapor Phase Epitaxy. The surface morphology of BAlN alloys exhibits a transition stage from a completely two-dimensional to a three-dimensional granular surface with an increased trimethylaluminum/group III (TMAl/III) ratio. Only a shift in the position of the 002 plane reflection peak to higher diffraction angles in the 2θ−ω scan along with a decrease in intensity was observed, specifying formation of layered BAlN alloys up to a TMAl/III ratio of 14. AlN phase separation was observed while increasing the TMAl/III ratio to 25, supporting SEM observations. Secondary-ion mass spectrometry measurements confirmed the presence of up to 17% Al in layered BAlN alloy systems. A cross sectional transmission electron microscopy (TEM) study confirmed the layered nature of single phase BAlN alloys. It also revealed the presence of wurtzite Al rich BAlN phases in a matrix of layered hexagonal B rich BAlN. Band to band transition around 5.86 eV has been observed, which shifted slightly to lower energy with increasing Al incorporation. The bowing parameter (C) in boron rich BAlN alloy systems was evaluated to be around 0.65 ± 0.05 eV. Encouraging results were obtained on boron rich BAlN alloy formation, motivating further exploration of growth conditions and study of BAlN fundamental properties for applications in deep UV optoelectronics.Hexagonal boron nitride (h-BN) is a unique III-nitride, which has interesting properties such as a layered structure, high thermal conductivity, and a wide bandgap (∼6 eV).1–5 Even though h-BN is an indirect bandgap semiconductor, it has an impressive deep ultraviolet (UV) emission and, hence, it is very promising for applications in deep UV optoelectronics when compared to direct bandgap AlN and other materials.3,6–13 The AlN alloy system, on the other hand, is the most studied material for applications in the deep UV regime, but growth of high quality materials and p-type doping are challenging.6,14 Both Al rich w-BAlN and B rich h-BAlN alloys may enable a desirable bandgap and lattice/strain engineering for applications. For example, h-BN can be made into a direct bandgap material through strain engineering or alloying with Al, which would enhance emission efficiency in the deep UV for UV LEDs. Alloying boron into AlN could also lead to a type II BAlN/AlGaN heterojunction,15 allowing the achievement of an electron blocking layer. BAlN has also been studied as a promising material candidate for high-reflectivity distributed Bragg reflectors (DBRs) due to strong refractive index modification.16,17 Because of their layered nature and reported intrinsic p-type behavior, the use of h-BN based alloys may give more flexibility to design highly efficient device structures.18–20 Theoretically, it was reported that BAlN alloys can have structural crossover from hexagonal to wurtzite at 50% of boron, and the band-gap transition from indirect to direct would occur at 75% of boron.21,22Apart from these theoretical investigations, boron rich BAlN alloys have not yet been explored experimentally. The growth of boron rich BAlN alloys and the understanding of its basic structural, as well as the optical, properties are of high importance. In this work, we report growth of single-phase boron rich BAlN alloys up to 17% of Al in a Metal-Organic Vapor Phase Epitaxy (MOVPE) reactor. We first studied in detail the relationship between morphology, Al composition, and the trimethylaluminum/group III (TMAl/III) ratio. Second, the bandgap variation in boron rich BAlN and the bowing effect were presented.The BAlN alloys were grown directly on c-plane sapphire substrates without any buffer in an Aixtron MOVPE close coupled showerhead (CCS) reactor. Triethylboron (TEB), trimethylaluminum (TMAl), and ammonia (NH3) were precursors for boron, aluminum, and nitrogen, respectively. 20 nm thick of BAlN layers were grown at 1280 °C and 90 mbar pressure. The TMAl/III ratio was varied from 0 to 25; in order to increase the Al content in gas phase, all other parameters were kept constant.A scanning electron microscope (SEM) was used to study the surface morphology of the samples. The crystalline structure and phase purity of BAlN alloys were examined by high-resolution X-ray diffraction (HRXRD) scans, performed in a Panalytical X'pert Pro Materials Research Diffractometers system with Cu Kα radiation in triple axis mode. The aluminum content was estimated by Secondary-ion mass spectrometry (SIMS) using Cs+ molecular ions. The interfaces of heterostructures were characterized by high-angle Annular Dark Field Scanning Transmission electron Microscopy (HAADF-STEM) performed on an aberration-corrected JEOL 2200FS electron transmission microscope. Prior to this study, cross sectional lamellae were prepared by the FIB process after coating a 100 nm thick carbon for layer protection. Transmission spectra were measured at room temperature with a Perkin Elmer LAMBDA 950 spectrophotometer.
Published: 2020
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7. Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)

Author: Adama Mballo, Abdallah Ougazzaden, Paul L. Voss, Phuong Vuong, Suresh Sundaram, Yacine Halfaya, Soufiane Karrakchou, Jean-Paul Salvestrini, Chris Bishop, Simon Gautier, Taha Ayari, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Smith College, Picker Engineering Program, Northampton
Subjects: Materials science, 02 engineering and technology, Substrate (electronics), Nitride, 010402 general chemistry, 01 natural sciences, Industrial and Manufacturing Engineering, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, law, General Materials Science, Wafer, h-BN, pick-and-place, business.industry, 021001 nanoscience & nanotechnology, III-nitrides, 0104 chemical sciences, Mechanics of Materials, Scalability, Optoelectronics, SMT placement equipment, Sapphire substrate, 0210 nano-technology, business, heterogeneous integration, Light-emitting diode
Abstract: International audience; In article number 1900164 by Abdallah Ougazzaden and co‐workers, III‐Nitride based LEDs have been locally grown on h‐BN and fabricated at a wafer‐scale. This enables a simple and a dicing‐free pick‐and‐place of the devices on a flexible substrate without performance degradation.
Published: 2019
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8. Nanopyramid-based absorber to boost the efficiency of InGaN solar cells

Author: Walid El Huni, Yacine Halfaya, Houda Ennakrachi, Simon Gautier, Soufiane Karrakchou, Taha Ayari, Ali Ahaitouf, Renaud Puybaret, Matthew B. Jordan, Chris Bishop, Paul L. Voss, Abdallah Ougazzaden, Jean-Paul Salvestrini, Muhammad Arif, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Signaux Systèmes et Composants (LSSC), Faculté des sciences (Fès), Smith College, Picker Engineering Program, Northampton, IMPACT N4S, and ANR-15-IDEX-0004,LUE,Isite LUE(2015)
Subjects: Materials science, Design, 020209 energy, 02 engineering and technology, 7. Clean energy, law.invention, [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], Planar, law, Electric field, Solar cell, 0202 electrical engineering, electronic engineering, information engineering, General Materials Science, Absorption (electromagnetic radiation), Photocurrent, InGaN, Renewable Energy, Sustainability and the Environment, business.industry, Open-circuit voltage, Doping, Semi-polar plane, 021001 nanoscience & nanotechnology, Polarization charges, Optoelectronics, 0210 nano-technology, business, Short circuit, Nanopyramids, Simulation
Abstract: International audience; InGaN nano-structures, grown using nano selective area growth, have been shown to exhibit high crystalline quality, even for high In content InGaN alloy, and reduced polarization charge effect. They are thus very attractive for the realization of high efficiency solar cells. Compared to planar InGaN absorbers, nanopyramid-based absorbers are shown to relax the usual challenging constraint on the doping of the p-GaN layer, which would be needed to overcome the polarization-induced electric field. NP-based solar cells maintain the same performance with ten times lower p-GaN doping. Furthermore, the SiO2 mask used for selective area growth of the nanopyramids is shown to help trap light into the nanopyramids, leading to increased optical absorption and thus efficiency. Last, InGaN nanopyramid absorber-based solar cells can allow for a higher InGaN residual donor concentration than that of the planar InGaN solar cells. Overall, an optimized In0.3Ga0.7N nanopyramid-based solar cell can lead to an efficiency twice than that of a planar InGaN-based solar cells with standard p- and n-GaN doping level. As a proof of concept, an In0.09Ga0.91N nanopyramid-based solar cell has been fabricated and is shown to have larger short circuit photocurrent and open circuit voltage than a state of the art In0.08Ga0.92N-based planar solar cell.
Published: 2019
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9. Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019)

Author: Yacine Halfaya, Taha Ayari, Simon Gautier, Abdallah Ougazzaden, Jean-Paul Salvestrini, Xin Li, Suresh Sundaram, Chris Bishop, Paul L. Voss, Gilles Patriarche, Saiful Alam, Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), and Smith College, Picker Engineering Program, Northampton
Subjects: Materials science, Nanowire, 02 engineering and technology, semiconductors, Nitride, 010402 general chemistry, Epitaxy, 01 natural sciences, flexible electronics, law.invention, [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], chemistry.chemical_compound, symbols.namesake, law, core/shell nanostructures, 2D boron nitride, business.industry, van der Waals epitaxy, Mechanical Engineering, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Semiconductor, chemistry, Mechanics of Materials, Boron nitride, symbols, Optoelectronics, Nanorod, van der Waals force, 0210 nano-technology, business, nanorods, Light-emitting diode
Abstract: International audience; In article number 1900207, Suresh Sundaram, Abdallah Ougazzaden, and co‐workers demonstrate self‐organized GaN nanorods formation on layered h‐BN templates by van der Waals epitaxial growth. This approach is used to grow III‐N nanowire light‐emitting diodes. In addition, this approach also mitigates transfer processes and scaling issues seen with other 2D materials, since both the 1D (GaN nanorods) and 2D (h‐BN) are grown at the wafer‐scale and in one epitaxial growth run.
Published: 2019
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10. Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride

Author: Yacine Halfaya, Xin Li, Taha Ayari, Suresh Sundaram, Chris Bishop, Jean-Paul Salvestrini, Abdallah Ougazzaden, Simon Gautier, Gilles Patriarche, Saiful Alam, Paul L. Voss, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Université de Lorraine (UL), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS]Physics [physics], Materials science, business.industry, Mechanical Engineering, 02 engineering and technology, Substrate (electronics), Nitride, 010402 general chemistry, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, 0104 chemical sciences, symbols.namesake, chemistry.chemical_compound, chemistry, Mechanics of Materials, Boron nitride, symbols, Sapphire, Optoelectronics, Nanorod, Metalorganic vapour phase epitaxy, van der Waals force, 0210 nano-technology, business
Abstract: International audience; Hexagonal boron nitride (h‐BN) is a promising 2D template that decouples substrate effects from the layer above it by van der Waals epitaxy, because there are only weak forces out of the h‐BN. It also permits convenient mechanical transfer of devices grown on their surface to an appropriate substrate. Here, van der Waals epitaxial growth resulting in the formation of self‐organized GaN nanorods on h‐BN templates is demonstrated. This approach to the growth of III‐N nanostructures avoids transfer processes and scaling issues seen with other 2D materials, since both the 1D (GaN nanorods) and 2D (h‐BN) are grown at the wafer‐scale and in one growth run. Further, this process is used to grow vertical core–shell p‐GaN/InGaN/n‐GaN nano‐PIN device structures on wafer‐scale 2D h‐BN on sapphire and silicon substrates. The high quality of the core–shell nanostructures is confirmed by detailed electron microscopy study, which gives more insight into the nanorod formation mechanism on 2D material. Mechanical transfer of nanostructures on sapphire substrates to copper tape is then demonstrated, with no resulting damage of nanorods. Use of MOVPE grown large‐area h‐BN to realize nanostructures is a significant advancement and can lead to new nanodevice architectures needed for next‐generation optoelectronic devices.
Published: 2019
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11. Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery

Author: J de Sanoit, Quentin Gaimard, A. Ramdane, Kamel Merghem, Suresh Sundaram, C E Munson, J.P. Salvestrini, Abdallah Ougazzaden, D. J. Rogers, Paul L. Voss, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Georgia Institute of Technology [Atlanta], Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Nanovation SARL (Nanovation), Nanovation SARL, Laboratoire Capteurs Diamant (LCD-LIST), Département Métrologie Instrumentation & Information (DM2I), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, ANR-11-BS09-0038,BATGAN,Convertisseur d'energie betavoltaiques a base de nitrure de gallium(2011), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA))
Subjects: Battery (electricity), Betavoltaics, betavoltaic, Materials science, Fabrication, Acoustics and Ultrasonics, Semiconductor materials, 02 engineering and technology, $^{Ni}$63, 01 natural sciences, 7. Clean energy, GaN, Experimental testing, 0103 physical sciences, Full model, 010302 applied physics, Ideal (set theory), [SPI.NRJ]Engineering Sciences [physics]/Electric power, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Engineering physics, [INFO.INFO-MO]Computer Science [cs]/Modeling and Simulation, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Power (physics), [SPI.TRON]Engineering Sciences [physics]/Electronics, battery, 0210 nano-technology
Abstract: International audience; GaN is a durable, radiation hard and wide-bandgap semiconductor material, making it ideal for usage with betavoltaic batteries. This paper describes the design, fabrication and experimental testing of 1 cm$^2$ GaN-based betavoltaic batteries (that achieve an output power of 2.23 nW) along with a full model that accurately simulates the device performance which is the highest to date (to the best of our knowledge) for GaN-based devices with a $^{Ni}$63 source.
Published: 2018
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12. Optimization of semibulk InGaN-based solar cell using realistic modeling

Author: Jean-Paul Salvestrini, Walid El-Huni, Anne Migan-Dubois, Paul L. Voss, Z. Djebbour, Abdallah Ougazzaden, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Georgia Institute of Technology [Lorraine, France], Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), Université de Lorraine (UL)-CentraleSupélec, IMPACT N4S, ANR-15-IDEX-0004,LUE,Isite LUE(2015), and CentraleSupélec-Université de Lorraine (UL)
Subjects: Work (thermodynamics), Fabrication, Materials science, Band gap, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, law, 0103 physical sciences, Solar cell, General Materials Science, 010302 applied physics, Renewable Energy, Sustainability and the Environment, business.industry, Energy conversion efficiency, Relaxation (NMR), Photovoltaic system, 021001 nanoscience & nanotechnology, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Indium
Abstract: Due to its high absorption coefficient and variable bandgap, InGaN is being intensively studied for photovoltaic applications. Growth of thick homogenous InGaN absorbers is challenging due to relaxation, clustering, and transition from 2D to 3D growth. These issues can be avoided by a semibulk multilayer structure. In this work, we analyze InGaN-based semibulk-structured solar cells in detail. We show that for indium content lower than 15%, GaN interlayers’ thickness has no influence on carrier transport due to the low barrier height. A conversion efficiency of 2.4% can be expected for this indium content. However, for higher indium content (15–30%), we show that the thinner the GaN interlayers, the better the conversion efficiency. Beyond 30% of indium, the conversion efficiency is hindered by the barriers’ important height even for very thin thicknesses of GaN interlayers. We show also that, for semibulk structure, both growth direction (N-face and metal-face) have similar impact on efficiency. This theoretical study gives the guidelines for the fabrication of InGaN-based solar cells that can be used as a wide-bandgap top cell in multijunction solar cells.
Published: 2017
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13. InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop

Author: Xin Li, Saiful Alam, Ivan C. Robin, Jean-Paul Salvestrini, Suresh Sundaram, Youssef El Gmili, Abdallah Ougazzaden, Paul L. Voss, Miryam Elouneg-Jamroz, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Smith College, Picker Engineering Program, Northampton, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), IMPACT N4S, and ANR-15-IDEX-0004,LUE,Isite LUE(2015)
Subjects: Photoluminescence, Materials science, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, General Materials Science, Voltage droop, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Quantum-confined Stark effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Full width at half maximum, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Quantum efficiency, 0210 nano-technology, business, Indium, Light-emitting diode
Abstract: In0.16Ga0.84N/In0.05Ga0.95N Multiple Quantum Well (MQW) structure grown on a 70 nm thick high quality semi-bulk InGaN buffer layer is reported. Temperature dependent photoluminescence (PL) reveals 67.5% of room temperature Internal Quantum Efficiency (IQE) at an emission peak of ∼455 nm with FWHM of 20 nm. Low temperature PL study shows clear improvement in emission intensity when conventional GaN buffer and GaN barrier are replaced by semi-bulk InGaN buffer in addition with InGaN barrier. Simulation confirms improved IQE and reduced efficiency droop when using semi-bulk as buffer which is attributed to the improved overlapping of electron-hole wave functions due to the reduced internal electric field from counteraction by surface polarization field. This efficiency improvement is very beneficial for high In content green LEDs where the efficiency is limited by polarization induced Quantum Confined Stark Effect (QCSE) for excess indium content.
Published: 2017
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14. Experimental Study and Device Design of NO, NO 2 , and NH 3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

Author: Youssef El Gmili, Suresh Sundaram, Chris Bishop, Jeremy Streque, Yacine Halfaya, Paul L. Voss, Xin Li, Ali Soltani, Abdallah Ougazzaden, Jean-Paul Salvestrini, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), School of Instrumentation Science and Opto-electronics Engineering [Beijing], Beihang University (BUAA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), IMPACT N4S, ANR-15-IDEX-0004,LUE,Isite LUE(2015), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)
Subjects: Imagination, Materials science, Chemical substance, media_common.quotation_subject, Nanotechnology, High-electron-mobility transistor, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Sensitivity, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Instrumentation, media_common, 010302 applied physics, HEMTs, [SDE.IE]Environmental Sciences/Environmental Engineering, business.industry, 010401 analytical chemistry, Wide-bandgap semiconductor, Logic gates, Atmospheric temperature range, Aluminum gallium nitride, Wide band gap semiconductors, 0104 chemical sciences, Logic gate, Optoelectronics, Sensor phenomena and characterization, business, Science, technology and society, Sensitivity (electronics)
Abstract: International audience; We report an AlGaN/GaN HEMT gas sensor designed to enable NO, NO 2 , and NH 3 detection from 100 °C-400 °C over a large concentration range. Device modeling is performed to optimize several HEMT device parameters for sensing, and the experimental results show that the optimized sensor has improved performance compared with the previously reported HEMT sensors. The device shows significant no sensitivity for the first time in an HEMT device, with sensitivity up to 7% at 400 °C. In addition, high sensitivities of up to 17% are reported for NO 2 , and NH 3 is detected at concentrations as low as 150 ppb.
Published: 2016
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15. Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Author: Suresh Sundaram, Gilles Patriarche, Paul L. Voss, Taha Ayari, Renaud Puybaret, Youssef El Gmili, Jean-Paul Salvestrini, Xin Li, Abdallah Ougazzaden, School of Instrumentation Science and Opto-electronics Engineering [Beijing], Beihang University (BUAA), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), IMPACT N4S, and ANR-15-IDEX-0004,LUE,Isite LUE(2015)
Subjects: 010302 applied physics, Materials science, business.industry, Band gap, Hexagonal phase, Cathodoluminescence, 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, 0103 physical sciences, Scanning transmission electron microscopy, Sapphire, Optoelectronics, General Materials Science, Wafer, Metalorganic vapour phase epitaxy, 0210 nano-technology, business
Abstract: International audience; This article reports on two-dimensional (2D) layered hexagonal BN (h-BN) grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The highly oriented lattice and hexagonal phase of the epitaxial layers were confirmed by X-ray diffraction, Raman spectrum, and cross-section scanning transmission electron microscopy. The surface of BN over a 2-in. wafer exhibits specific 2D material morphology features for different BN thicknesses, from an atomically flat surface to a honeycomb wrinkle network. The grown epitaxial layers demonstrate a large absorption coefficient (∼106 cm–1) above the bandgap energy of 5.87 eV with direct band transition behavior. Near-bandgap luminescence at 216.5 nm (5.73 eV) and characteristic defect band recombination at longer wavelengths were observed by cathodoluminescence at 77 K. This wafer-scale MOVPE-grown layered h-BN with different 2D morphology and with near bandgap emission can facilitate applications such as graphene-based electronics, advanced van der Waals heterostructures, and deep UV photonics.
Published: 2016
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16. Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

Author: Suresh Sundaram, Renaud Puybaret, Konstantinos Pantzas, P. L. Bonanno, Jean-Paul Salvestrini, Xiaohang Li, Cédric Pradalier, Y. El Gmili, Paul L. Voss, Abdallah Ougazzaden, Gilles Patriarche, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), and CentraleSupélec-Université de Lorraine (UL)
Subjects: Materials science, Nanostructure, Silicon, Nucleation, chemistry.chemical_element, Bioengineering, Nanotechnology, 02 engineering and technology, 01 natural sciences, 0103 physical sciences, General Materials Science, [INFO]Computer Science [cs], Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, Boron, 010302 applied physics, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, Template, chemistry, Mechanics of Materials, Material quality, 0210 nano-technology, Single crystal
Abstract: International audience; We report nano-selective area growth (NSAG) of BGaN by MOCVD on AlN/Si(111) and GaN templates resulting in 150 nm single crystalline nanopyramids. This is in contrast to unmasked or micro-selective area growth, which results in a multi-crystalline structure on both substrates. Various characterization techniques were used to evaluate NSAG as a viable technique to improve BGaN material quality on AlN/Si(111) using results of GaN NSAG and unmasked BGaN growth for comparison. Evaluation of BGaN nanopyramid quality, shape and size uniformity revealed that the growth mechanism is the same on both the templates. Further STEM analysis of BGaN nanopyramids on AlN/Si (111) templates confirmed that these are single-crystalline structures without any dislocations, likely due to single nucleation occurring in the 80 nm mask opening. CL results correspond to boron content between 1.7% and 2.0% in the nanopyramids. We conclude that NSAG is promising for growth of high-quality BGaN nanostructures and complex nano-heterostructures, especially for low-cost silicon substrates.
Published: 2016
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17. Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust Gas Sensors for Automotive Antipollution Systems

Author: Paul L. Voss, Suresh Sundaram, Ali Soltani, Jean-Paul Salvestrini, Vincent Aubry, Yacine Halfaya, Chris Bishop, Abdallah Ougazzaden, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), PSA Peugeot Citroën, PSA Peugeot Citroën (PSA), School of Electrical and Computer Engineering, Georgia Institute of Technology [Atlanta], Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), IMPACT N4S, and ANR-15-IDEX-0004,LUE,Isite LUE(2015)
Subjects: Diesel exhaust, Materials science, Automotive industry, Analytical chemistry, 02 engineering and technology, High-electron-mobility transistor, lcsh:Chemical technology, 01 natural sciences, 7. Clean energy, Biochemistry, Article, Analytical Chemistry, law.invention, gas sensor, law, 0103 physical sciences, AlGaN/GaN heterostructure, HEMT transistor, NOx and NH3, automotive exhaust line, lcsh:TP1-1185, Electrical and Electronic Engineering, High electron, Instrumentation, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, business.industry, Transistor, Exhaust gas, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, 13. Climate action, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Sensitivity (electronics)
Abstract: We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO 2 and 15 ppm-NH 3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time.
Published: 2016
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18. Model of Ni-63 battery with realistic PIN structure

Author: Jean-Paul Salvestrini, Abdallah Ougazzaden, Charles E. Munson, Youssef El Gmili, Muhammad Arif, Jeremy Streque, Anthony Martinez, Abderrahim Ramdane, Sofiane Belahsene, Paul L. Voss, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), and ANR-11-BS09-0038,BATGAN,Convertisseur d'energie betavoltaiques a base de nitrure de gallium(2011)
Subjects: Battery (electricity), Materials science, Scanning electron microscope, business.industry, Band gap, Monte Carlo method, Wide-bandgap semiconductor, General Physics and Astronomy, Illuminance, Nuclear material, 7. Clean energy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, business, Energy source
Abstract: International audience; GaN, with its wide bandgap of 3.4 eV, has emerged as an efficient material for designing high-efficiency betavoltaic batteries. An important part of designing efficient betavoltaic batteries involves a good understanding of the full process, from the behavior of the nuclear material and the creation of electron-hole pairs all the way through the collection of photo-generated carriers. This paper presents a detailed model based on Monte Carlo and Silvaco for a GaN-based betavoltaic battery device, modeled after Ni-63 as an energy source. The accuracy of the model is verified by comparing it with experimental values obtained for a GaN-based p-i-n structure under scanning electron microscope illumination.
Published: 2015
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19. Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors

Author: M.B. Assouar, Yacine Halfaya, Suresh Sundaram, Paul L. Voss, J. Y. Marteau, Chris Bishop, Jean-Paul Salvestrini, Y. El Gmili, Laetitia Pradere, Abdallah Ougazzaden, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Institut Jean Lamour (IJL), and Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Physics and Astronomy (miscellaneous), business.industry, Superlattice, Schottky barrier, Schottky diode, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Responsivity, chemistry, 0103 physical sciences, Optoelectronics, Diffusion (business), 0210 nano-technology, business, Boron, Layer (electronics), Diode
Abstract: International audience; We report a double Schottky junction gas sensor based on a BGaN/GaN superlattice and Pt contacts. NO2 is detected at concentrations from 4.5 to 450 ppm with current responsivity of 6.7 mA/(cm(2) x ppm) at 250 degrees C with a response time of 5 s. The sensor is also selective against NH3 at least for concentrations less than 15 ppm. The BGaN layer at the surface increases surface trap density and trap depth, which improves responsivity and high temperature stability while the GaN layer improves the magnitude of the diode current. The BGaN layer's columnar growth structure also causes a Pt morphology that improves O2- diffusion.
Published: 2015
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20. Investigation of New Approaches for InGaN Growth with High Indium Content for CPV Application

Author: Sofiane Belahsene, Thomas Fix, Abdelillah Slaoui, Abderahim Ramdane, Jeremy Streque, Abdallah Ougazzaden, Suresh Sundaram, Gilles Patriarche, Renaud Puybaret, Anthony Martinez, Paul L. Voss, Muhammad Arif, Jean-Paul Salvestrini, Youssef El Gmili, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube), Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), ANR-12-PRGE-0014,NOVAGAINS,Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium(2012), Salvestrini, Jean Paul, Production renouvelable et gestion de l’électricité - Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium - - NOVAGAINS2012 - ANR-12-PRGE-0014 - PROGELEC - VALID, École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de Recherche en Informatique et en Automatique (Inria)-Les Hôpitaux Universitaires de Strasbourg (HUS)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, and Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, Nanostructure, Materials science, business.industry, Relaxation (NMR), chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 7. Clean energy, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], chemistry, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Quantum efficiency, Nanorod, Dislocation, 0210 nano-technology, Luminescence, business, Layer (electronics), Indium
Abstract: International audience; We propose to use two new approaches that may overcome the issues of phase separation and high dislocation density in InGaN-based PIN solar cells. The first approach consists in the growth of a thick multi-layered InGaN/GaN absorber. The periodical insertion of the thin GaN interlayers should absorb the In excess and relieve compressive strain. The InGaN layers need to be thin enough to remain fully strained and without phase separation. The second approach consists in the growth of InGaN nano-structures for the achievement of high In content thick InGaN layers. It allows the elimination of the preexisting dislocations in the underlying template. It also allows strain relaxation of InGaN layers without any dislocations, leading to higher In incorporation and reduced piezo-electric effect. The two approaches lead to structural, morphological, and luminescence properties that are significantly improved when compared to those of thick InGaN layers. Corresponding full PIN structures have been realized by growing a p-type GaN layer on the top the half PIN structures. External quantum efficiency, electro-luminescence, and photo-current characterizations have been carried out on the different structures and reveal an enhancement of the performances of the InGaN PIN PV cells when the thick InGaN layer is replaced by either InGaN/GaN multi-layered or InGaN nanorod layer.
Published: 2015
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21. MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Author: François Réveret, Suresh Sundaram, Y. El Gmili, Xiaojian Li, Frédéric Genty, Pierre Disseix, Joël Leymarie, Paul L. Voss, Russell D. Dupuis, G. Patriache, Sophie Bouchoule, Abdallah Ougazzaden, Jean-Paul Salvestrini, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut Pascal (IP), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-SIGMA Clermont (SIGMA Clermont)-Centre National de la Recherche Scientifique (CNRS), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire des sciences et matériaux pour l'électronique et d'automatique (LASMEA), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Centre National de la Recherche Scientifique (CNRS), Modélisation, Intelligence, Processus et Système (MIPS), Ecole Nationale Supérieure d'Ingénieur Sud Alsace-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-IUT de Colmar-IUT de Mulhouse, School of Electrical and Computer Engineering - Georgia Insitute of Technology (ECE GeorgiaTech), Georgia Institute of Technology [Atlanta], Centre National de la Recherche Scientifique (CNRS)-Université Clermont Auvergne (UCA)-Institut national polytechnique Clermont Auvergne (INP Clermont Auvergne), Université Clermont Auvergne (UCA)-Université Clermont Auvergne (UCA), Center for Compound Semiconductors and School of Electrical and Computer Engineering, ANR-11-BS03-0012,VESUVE,LASER A CAVITE VERTICALE EMETTANT PAR LA SURFACE DANS LA GAMME DE L'ULTRA-VIOLET(2011), Université de Lorraine (UL)-CentraleSupélec, Georgia Tech - CNRS [Metz] (UMI2958), Ecole Nationale Supérieure des Arts et Metiers Metz-SUPELEC-Georgia Institute of Technology [Atlanta]-Georgia Institute of Technology [Lorraine, France]-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Sigma CLERMONT (Sigma CLERMONT)-Centre National de la Recherche Scientifique (CNRS), Van Luchene, Sébastien, and Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))
Subjects: Materials science, [SPI] Engineering Sciences [physics], chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Spectral line, MOVPE, Inorganic Chemistry, [SPI]Engineering Sciences [physics], 0103 physical sciences, Materials Chemistry, Metalorganic vapour phase epitaxy, BAlN, Boron, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Heterojunction, III-nitrides, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Absorption edge, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Crystallite, 0210 nano-technology, business
Abstract: International audience; Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been observed by both SIMS profile and Z-contrast HAADF-STEM images. The BAlN layers demonstrate columnar polycrystalline feature. The BAlN layers exhibit an emission peak by CL and absorption edge in transmission spectra at around 260 nm. The results enable the development of BAlGaN based multi-layered heterostructure for UV and deep UV applications.
Published: 2014
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22. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Author: V. E. Sandana, Philippe Bove, Y. El Gmili, Konstantinos Pantzas, Simon Gautier, Manijeh Razeghi, Tarik Moudakir, David Troadec, Gilles Patriarche, Suresh Sundaram, F. Hosseini Teherani, Paul L. Voss, Abdallah Ougazzaden, D. J. Rogers, T1, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL), Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Center for Quantum Devices [Evanston] (CQD), Northwestern University [Evanston], Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), and CentraleSupélec-Université de Lorraine (UL)
Subjects: 010302 applied physics, Soda-lime glass, Materials science, business.industry, Wafer bonding, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Inorganic Chemistry, 0103 physical sciences, Materials Chemistry, Sapphire, Optoelectronics, Wafer, Metalorganic vapour phase epitaxy, Thin film, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Wurtzite crystal structure
Abstract: GaN thin films were grown on ZnO/c-Al 2 O 3 with excellent uniformity over 2 in. diameter wafers using a low temperature/pressure MOVPE process with N 2 as a carrier and dimethylhydrazine as an N source. 5 mm×5 mm sections of similar GaN layers were direct-fusion-bonded onto soda lime glass substrates after chemical lift-off from the sapphire substrates. X-Ray Diffraction, Scanning Electron Microscopy and Transmission Electron Microscopy confirmed the bonding of crack-free wurtzite GaN films onto a glass substrate with a very good quality of interface, i.e. continuous/uniform adherence and absence of voids or particle inclusions. Using this approach, (In) GaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming the expensive sapphire substrate so it can be utilized again for growth.
Published: 2013
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23. A study of BGaN back-barriers for AlGaN/GaN HEMTs

Author: Paul L. Voss, Vinod Ravindran, Abdallah Ougazzaden, Tarik Moudakir, Jeramy Dickerson, Simon Gautier, UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)
Subjects: 010302 applied physics, [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, business.industry, Transistor, Algan gan, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Polarization (waves), 01 natural sciences, Buffer (optical fiber), Electronic, Optical and Magnetic Materials, law.invention, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Fermi gas, Instrumentation, ComputingMilieux_MISCELLANEOUS
Abstract: We study the use of a BGaN back-barrier layer in the GaN buffer of Al y Ga1 −y N/GaN highelectron mobility transistors to improve confinement of carriers in the 2D electron gas region. Unlike InGaN back-barrier designs, whose polarization-induced sheet charges form an electrostatic barrier at the backbarrier/ buffer interface, BGaN back-barrier designs create an electrostatic barrier at the channel/backbarrier interface. This can result in carrier confinement to sub-15 nm thickness, even when the channel is 30 nm wide. Although polarization sheet charges due to the BGaN back-barrier form a secondary well at the back-barrier/buffer interface, increasing the thickness of the back-barrier may move the secondary well so that it no longer interacts with the primary channel.
Published: 2012
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24. Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

Author: Gilles Patriarche, Konstantinos Pantzas, Paul L. Voss, Abdallah Ougazzaden, Olivia Mauguin, S. Suresh, Tarik Moudakir, Ludovic Largeau, David Troadec, Simon Gautier, Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Subjects: Materials science, Energy-dispersive X-ray spectroscopy, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Epitaxy, 01 natural sciences, Optics, 0103 physical sciences, Scanning transmission electron microscopy, General Materials Science, Electrical and Electronic Engineering, Spectroscopy, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Elastic scattering, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Mechanical Engineering, Resolution (electron density), General Chemistry, 021001 nanoscience & nanotechnology, Dark field microscopy, chemistry, Mechanics of Materials, Optoelectronics, 0210 nano-technology, business, Indium
Abstract: International audience; Using elastic scattering theory we show that a small set of energy dispersive x-ray spectroscopy (EDX) measurements is sufficient to experimentally evaluate the scattering function of electrons in high-angle annular dark field scanning transmission microscopy (HAADF-STEM). We then demonstrate how to use this function to transform qualitative HAADF-STEM images of InGaN layers into precise, quantitative chemical maps of the indium composition. The maps obtained in this way combine the resolution of HAADF-STEM and the chemical precision of EDX. We illustrate the potential of such chemical maps by using them to investigate nanometer-scale fluctuations in the indium composition and their impact on the growth of epitaxial InGaN layers.
Published: 2012
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25. Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Author: M. Boucherit, Vinod Ravindran, Jean-Claude De Jaeger, Simon Gautier, Jeramy Dickerson, Abdallah Ougazzaden, Tarik Moudakir, Paul L. Voss, Ali Soltani, Marie-Antoinette di Forte-Poisson, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Georgia Institute of Technology [Atlanta], Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Alcatel-Thales III-V Lab (III-V Lab ), and THALES [France]
Subjects: 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), business.industry, Transistor, Wide-bandgap semiconductor, Heterojunction, 02 engineering and technology, Trapping, Electron, Nitride, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Fermi gas, Leakage (electronics)
Abstract: International audience; A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects: a polarization-induced band discontinuity and a resistive barrier originating from excellent insulation properties of BGaN. Compared to conventional AlGaN/GaN HEMTs, structures grown with BGaN back-barrier showed a significant improvement of static performances, transport properties, and trapping effects involving a limited current collapse in dynamic regime. A DC maximum current increase of 58.7% was observed
Published: 2012
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26. Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

Author: Simon Gautier, Konstantinos Pantzas, Gilles Patriarche, Jeramy Dickerson, Olivia Mauguin, Y. El Gmili, Christian Tanguy, S. Suresh, Ali Ahaitouf, Abdallah Ougazzaden, Tarik Moudakir, T. Rivera, Chris Bishop, Paul L. Voss, Ludovic Largeau, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), T1, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL), and Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec
Subjects: 010302 applied physics, Diffraction, Photoluminescence, Materials science, business.industry, Cathodoluminescence, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Inorganic Chemistry, 0103 physical sciences, Materials Chemistry, Optoelectronics, Metalorganic vapour phase epitaxy, Single phase, 0210 nano-technology, Absorption (electromagnetic radiation), business, Quantum tunnelling, ComputingMilieux_MISCELLANEOUS
Abstract: In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting ultra-thin GaN interlayers during InGaN growth. Measurements by HAADF-STEM, X-ray diffraction, cathodoluminescence and photoluminescence demonstrate the effective suppression of the three-dimensional sublayer that is shown to spontaneously form in control InGaN epilayers grown without this method. Simulation predicts that tunneling through the GaN barriers is efficient and that carrier transport through this semi-bulk InGaN/GaN structure is similar to that of bulk InGaN. Such structures may be useful for improving the efficiency of InGaN solar cells by allowing thicker, higher quality InGaN absorption layers.
Published: 2012
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27. Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

Author: Christelle Pareige, Konstantinos Pantzas, G. Orsal, Abdallah Ougazzaden, Tarik Moudakir, Christophe Longeaud, Paul L. Voss, Vanessa Gorge, Simon Gautier, Z. Djebbour, Anne Migan-Dubois, SCM - Equipe Semiconducteurs en Couches Minces, Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), T1, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Georgia Institute of Technology [Lorraine, France]-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Ecole Nationale Supérieure des Arts et Metiers Metz-Université de Franche-Comté (UFC)
Subjects: 010302 applied physics, [PHYS]Physics [physics], Materials science, Physics and Astronomy (miscellaneous), Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystal, Absorbance, symbols.namesake, Crystallography, chemistry, Phase (matter), 0103 physical sciences, X-ray crystallography, symbols, Metalorganic vapour phase epitaxy, Thin film, 0210 nano-technology, Raman spectroscopy, Indium, ComputingMilieux_MISCELLANEOUS
Abstract: LGEP 2011 ID = 751; International audience; We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect represented as a Brendel oscillator (R. Brendel, Appl. Phys. A 50, 587, 1990). Band tail absorbance, corresponding to contorted bonds, increases with increased In content. Above 10% of In, the presence of another defect, the concentration of which increases with In content, has been correlated with x-ray diffraction and Raman. We suggest that this defect corresponds to nitrogen vacancies, in agreement with a reported model for GaN.
Published: 2011
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28. Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

Author: V. E. Sandana, Damien McGrouther, D. J. Rogers, Simon Gautier, François Jomard, Michael Molinari, Michel Troyon, Paul L. Voss, J. N. Chapman, G. Orsal, M. Abid, Tarik Moudakir, F. Hosseini Teherani, Abdallah Ougazzaden, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Nanovation SARL, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Microscopies et d'Etude de Nanostructures (lmen), Université de Reims Champagne-Ardenne (URCA), Department of Physics and Astronomy [Glasgow], UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Nanovation SARL (Nanovation), Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), and Salvestrini, Jean Paul
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], Indium nitride, Analytical chemistry, Cathodoluminescence, Gallium nitride, 02 engineering and technology, 010402 general chemistry, Epitaxy, Indium gallium nitride, 01 natural sciences, chemistry.chemical_compound, lift-off, Metalorganic vapour phase epitaxy, pulsed laser deposition, ComputingMilieux_MISCELLANEOUS, Wurtzite crystal structure, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], InGaN, Si substrate, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Secondary ion mass spectrometry, chemistry, metalorganic vapour phase epitaxy, ZnO, 0210 nano-technology
Abstract: International audience; InGaN/GaN layers were grown on ZnO-buffered Si (111) substrates by metalorganic vapour phase epitaxy (MOVPE). The dissociation of ZnO observed during conventional MOVPE growth of InGaN/GaN was combated through the use of a low pressure/temperature MOVPE approach with N2 as a carrier gas and dimethylhydrazine added to the ammonia (nitrogen precursor) in order to enhance the concentration of atomic nitrogen at relatively low temperature. Electron Microscopy of cross-sections, High Resolution X-Ray Diffraction (HR-XRD), secondary ion mass spectroscopy and cathodoluminescence studies suggested that single phase wurtzite InGaN layers with between about 17.5 and 21.5% indium were grown epitaxially, with no evidence of back-etching of the ZnO templates. HR-XRD revealed highly pronounced c-axis texture for both the InGaN/GaN and ZnO. Immersion in dilute nitric acid dissolved the ZnO such that the InGaN/GaN could be lifted-off from the substrate.
Published: 2010
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29. Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

Author: Nabila Maloufi, Konstantinos Pantzas, Ian T. Ferguson, M. Abid, G. Orsal, Simon Gautier, Andrei Sirenko, Paul L. Voss, M. Alnot, Abdallah Ougazzaden, Tarik Moudakir, F. Jomard, Zakaria Djebbour, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Georgia Institute of Technology [Lorraine, France]-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Ecole Nationale Supérieure des Arts et Metiers Metz-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'étude des textures et application aux matériaux (LETAM), Université Paul Verlaine - Metz (UPVM)-Centre National de la Recherche Scientifique (CNRS), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des matériaux (LPM), and Université Henri Poincaré - Nancy 1 (UHP)-Institut National Polytechnique de Lorraine (INPL)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Indium nitride, Analytical chemistry, chemistry.chemical_element, Gallium nitride, 02 engineering and technology, Epitaxy, 01 natural sciences, Inorganic Chemistry, chemistry.chemical_compound, X-ray photoelectron spectroscopy, 0103 physical sciences, Materials Chemistry, BInGaN, Metalorganic vapour phase epitaxy, Boron, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], InGaN, ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Metal-organic vapour phase epitaxy, Secondary ion mass spectrometry, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], InformationSystems_MISCELLANEOUS, 0210 nano-technology, Indium
Abstract: LGEP 2010 ID = 608; International audience; BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy (MOVPE). Epitaxial layer composition was determined by secondary ion mass spectroscopy (SIMS), and confirmed by X-ray photoelectron spectroscopy (XPS). Bandgap energies were measured using optical transmission and reflection spectroscopy. We find that boron incorporation in BInGaN reduces the bandgap, causing an effect similar to the increase of indium content in InGaN. However, adding boron has the advantage of decreasing the lattice mismatch with conventional GaN substrates.
Published: 2010
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29 results on '"Paul L. Voss"'

1. Design and fabrication process flow for high-efficiency and flexible InGaN solar cells

2. Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

3. Side-by-side comparison of pre- and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates

4. Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN

5. Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

6. Single crystalline boron rich B(Al)N alloys grown by MOVPE

7. Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019)

8. Nanopyramid-based absorber to boost the efficiency of InGaN solar cells

9. Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019)

10. Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride

11. Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery

12. Optimization of semibulk InGaN-based solar cell using realistic modeling

13. InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop

14. Experimental Study and Device Design of NO, NO 2 , and NH 3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

15. Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

16. Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

17. Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust Gas Sensors for Automotive Antipollution Systems

18. Model of Ni-63 battery with realistic PIN structure

19. Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors

20. Investigation of New Approaches for InGaN Growth with High Indium Content for CPV Application

21. MOVPE grown periodic AlN/BAlN heterostructure with high boron content

22. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

23. A study of BGaN back-barriers for AlGaN/GaN HEMTs

24. Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

25. Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

26. Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

27. Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

28. Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

29. Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

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