1. Dark Count Rate in Single-Photon Avalanche Diodes: characterization and modeling study
- Author
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Christel Buj, Jean Coignus, Mathieu Sicre, Bastien Mamdy, Megan Agnew, Isobel Nicholson, Francis Calmon, Dominique Golanski, Sara Pellegrini, Remi Helleboid, Denis Rideau, David Roy, STMicroelectronics [Crolles] (ST-CROLLES), INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
- Subjects
Diode modeling ,Complementary metal-oxide-semiconductor technologies ,Photon ,Electronic design automation ,Technology computer aided design ,Temperature measurement ,Oxide semiconductors ,Thermal ,Range (statistics) ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Breakdown probability ,Diode ,Probability ,Physics ,Modelling studies ,Photons ,Semiconductor device manufacture ,Avalanche diodes ,Characterization studies ,Solver ,CMOS integrated circuits ,Particle beams ,Computational physics ,Characterization (materials science) ,Metals ,Single photon avalanche diode ,Dark count rate ,Diode characterization ,MOS devices ,Rate measurements ,Voltage - Abstract
International audience; Dark Count Rate (DCR) in Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor technology is characterized and analyzed with a comprehensive simulation methodology. Based on a series of measurements of SPAD with various architectures, on an extended range of voltages and temperatures, the DCR measurements are correlated to the spatial localization of traps within the device and their parameters. To this aim, process and electrical simulations using Technology Computer-Aided Design (TCAD) tools are combined with an in-house McIntyre solver to compute the breakdown probability (Pt). The traps are accounted for using thermal SRH carrier generation-recombination mechanism which is coupled with the position-dependent breakdown probability. This rigorous methodology makes it possible to directly compare with DCR measurements, since only generated carriers with a non-negligible breakdown probability are considered
- Published
- 2021
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