1. On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics
- Author
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Soo-jin Hong, Lars-Ake Ragnarsson, Lionel Trojman, J. Tseng, A. De Keersgieter, Tom Schram, Jerome Mitard, Wei-E Wang, T. Y. Hoffmann, E. Rohr, Philippe Absil, Bich-Yen Nguyen, Konstantin Bourdelle, Malgorzata Jurczak, Nadine Collaert, Thomas Kauerauf, IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Kavli Institute of Nanosciences [Delft] (KI-NANO), Delft University of Technology (TU Delft), Laboratoire d'Informatique, Signal et Image, Electronique et Télécommunication (LISITE), Institut Supérieur d'Electronique de Paris (ISEP), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
- Subjects
010302 applied physics ,Electron mobility ,Materials science ,Silicon ,business.industry ,Scattering ,Silicon on insulator ,chemistry.chemical_element ,02 engineering and technology ,Dielectric ,021001 nanoscience & nanotechnology ,01 natural sciences ,7. Clean energy ,Silicon-germanium ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Electronic engineering ,Surface roughness ,Optoelectronics ,Field-effect transistor ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,0210 nano-technology ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
The effects of ultrathin EOT on the carrier mobility in bulk-Si, UTBOX-FDSOI and SiGe-QW pFET devices were compared. The mobility is found to decrease dramatically with the EOT (T inv ) as a result of stronger charge and surface roughness scattering at thinner SiO x interface layers irrespective of the device technology. UTBOX-FDSOI and bulk-Si nFETs have identical mobility values (190 cm2/Vs) at T inv =12.5A. In the UTBOX-FDSOI device architecture, a positive back gate bias provides a strong enhancement in electron mobility. In SiGe-QW pFET devices, a 150% improvement in hole-mobility is observed with low thermal budget laser-anneal (LA).
- Published
- 2011