1. Stoichiometry Calculation in BaxSr1−xTiO3 Solid Solution Thin Films, Prepared by RF Cosputtering, Using X-Ray Diffraction Peak Positions and Boltzmann Sigmoidal Modelling
- Author
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A. Márquez-Herrera, F. Chale-Lara, Felipe Caballero-Briones, M. Meléndez-Lira, Miguel A. Corona-Rivera, J Reséndiz-Muñoz, M. Zapata-Torres, O. Zelaya-Angel, and J. L. Fernández-Muñoz
- Subjects
010302 applied physics ,Diffraction ,Materials science ,Article Subject ,Band gap ,Energy-dispersive X-ray spectroscopy ,Analytical chemistry ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Boltzmann equation ,Sputtering ,lcsh:Technology (General) ,0103 physical sciences ,X-ray crystallography ,lcsh:T1-995 ,General Materials Science ,Thin film ,0210 nano-technology ,Solid solution - Abstract
A novel procedure based on the use of the Boltzmann equation to model the x parameter, the film deposition rate, and the optical band gap of BaxSr1−xTiO3 thin films is proposed. The BaxSr1−xTiO3 films were prepared by RF cosputtering from BaTiO3 and SrTiO3 targets changing the power applied to each magnetron to obtain different Ba/Sr contents. The method to calculate x consisted of fitting the angular shift of (110), (111), and (211) diffraction peaks observed as the density of substitutional Ba2+ increases in the solid solution when the applied RF power increases, followed by a scale transformation from applied power to x parameter using the Boltzmann equation. The Ba/Sr ratio was obtained from X-ray energy dispersive spectroscopy; the comparison with the X-ray diffraction derived composition shows a remarkable coincidence while the discrepancies offer a valuable diagnosis on the sputtering flux and phase composition. The proposed method allows a quick setup of the RF cosputtering system to control film composition providing a versatile tool to optimization of the process.
- Published
- 2017
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