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Your search keyword '"Francis Poingt"' showing total 7 results
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7 results on '"Francis Poingt"'

1. Chirp reduction in quantum dot-like semiconductor optical amplifiers

Author

Romain Brenot, Frederic Pommereau, J.-G. Provost, F. Martin, B. Rousseau, Olivier Drisse, O. Legouezigou, Estelle Derouin, G-H Duan, L. Legouezigou, M.D. Manzanedo, Francis Poingt, and Francois Lelarge

Subjects
Optical amplifier, Reduction (complexity), Optics, Materials science, Semiconductor, business.industry, Quantum dot, Chirp, business
Published
2007

2. Injection locked DBR laser diode module for access applications

Author

Frederic Pommereau, O. Legouezigou, B. Rousseau, Franck Mallecot, Francois Lelarge, J.-G. Provost, L. Legouezigou, Fabrice Blache, F. van Dijk, Alexandre Shen, G-H Duan, H. Gariah, Philippe Chanclou, and Francis Poingt

Subjects
Distributed feedback laser, Materials science, Optics, Laser diode, business.industry, law, Optoelectronics, Optical modulation amplitude, business, Injection locked, law.invention
Published
2007

3. High modulation bandwidth reflective SOA for optical access networks

Author

Estelle Derouin, L. Legouezigou, Jean Landreau, B. Rousseau, Frederic Pommereau, Francis Poingt, O. Legouezigou, Olivier Drisse, G-H Duan, J.-G. Provost, Romain Brenot, Francois Lelarge, and F. Martin

Subjects
Silicon photonics, Computer science, business.industry, Optical cross-connect, Optical performance monitoring, Optical modulation amplitude, Waveguide (optics), law.invention, Optics, law, Optical transistor, Optoelectronics, business, Optical attenuator, Microphotonics
Published
2007

4. Actively mode-locked Fabry-Perot laser diode module for sampling applications

Author

Frederic Pommereau, Francis Poingt, L. Legouezigou, Francois Lelarge, G-H Duan, H. Gariah, Alexandre Shen, O. Legouezigou, Fabrice Blache, S. Mitra, B. Rousseau, and F. Mallcot

Subjects
Materials science, Laser diode, business.industry, PIN diode, Injection seeder, law.invention, Vertical-cavity surface-emitting laser, Laser diode rate equations, law, Diode-pumped solid-state laser, Optoelectronics, business, Fabry–Pérot interferometer, Step recovery diode
Published
2007

5. Active and passive mode-locking in buried ridge mode-locked quantum dots Fabry-Perot semiconductor lasers

Author

B. Rousseau, Frederic Pommereau, B. Lelarge, Christophe Gosset, Beatrice Dagens, J. Renaudier, Philippe Gallion, O. Legouezigou, J.L. Oudar, Francis Poingt, G.-H. Daun, Romain Brenot, and Alain Accard

Subjects
Materials science, business.industry, Astrophysics::Instrumentation and Methods for Astrophysics, Physics::Optics, Saturable absorption, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Ridge (differential geometry), Semiconductor laser theory, Optics, Mode-locking, Quantum dot, Quantum dot laser, Optoelectronics, business, Fabry–Pérot interferometer, Quantum well
Abstract

Both passive and active mode-locking have been demonstrated in single-section quantum dots Fabry-Perot semiconductor lasers without saturable absorber, generating pulses at 28 GHz repetition frequency with one picosecond pulse width. (2 pages)

Published
2005

6. 10 Gb/s InAs/InP (001) quantum dot lasers operation on C-band up to 75°C

Author

L. Le Gouezigou, Jean Landreau, Dalila Make, Francois Lelarge, Francis Poingt, L. Morel, B. Rousseau, J.-G. Provost, Alain Accard, B. Thedrez, Beatrice Dagens, O. Le Gouezigou, and Frederic Pommereau

Subjects
Materials science, law, Quantum dot laser, C band, business.industry, Ridge (meteorology), Optoelectronics, Atmospheric temperature range, Laser, business, law.invention
Abstract

10 Gb/s operation at 1.55 μm of an InAs/InP (001) dots-in-a-well buried ridge stripe Fabry-Perot laser is demonstrated for the first time, in the temperature range 25-75°C. (2 pages)

Published
2005

7. High performance 1.3 m SLMQW BRS losers for 85°C operation

Author

Christophe Starck, I. Roux, I. Legouezigou, J.-L. Lafragette, Francis Poingt, B. Fernier, and Ph. Pagnod-Rossiaux

Subjects
Materials science, Threshold current, business.industry, law, Optoelectronics, Carrier leakage, Dry etching, business, Laser, law.invention
Abstract

By minimising carrier leakage, high performance 1.3 /spl mu/m FP buried ridge stripe (BRS) MQW lasers have been obtained with a sub-/spl mu/m 50 mm dry etching process. 12 mA low threshold current and 25 mW output power are achieved at 85/spl deg/C.

Published
1997

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