1. Rise-Time Improvement in Bipolar Pulse Solid-State Marx Modulators.
- Author
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Canacsinh, Hiren, Silva, J. Fernando, and Redondo, L. M.
- Subjects
ELECTRONIC modulators ,CAPACITORS ,INSULATED gate bipolar transistors ,DIODES ,SWITCHING circuits - Abstract
This paper presents the effect of stray capacitances in bipolar (negative and/or positive) pulses generated by the two different topologies of the solid-state Marx modulators. According to the analysis, the stray capacitances influence the energy transfer from the Marx modulator capacitors to the load affecting the bipolar (negative and/or positive) pulse rise time. This paper deals with the structure design to reduce the influence of the stray capacitance and to improve the pulse rise time of these bipolar solid-state Marx modulators. A four-stage laboratory prototype of the two topologies has been assembled using 1200-V insulated gate bipolar transistors and diodes, operating with 1000-V dc input voltage and 1-kHz frequency, producing 4-kV bipolar pulses, with 5- \mu \texts pulse duration and 120-ns rise time, into a resistive load. [ABSTRACT FROM PUBLISHER]
- Published
- 2017
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