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Gate-oxide degradation has been one of the critical reliability concerns of silicon carbide (SiC) metal–oxide–semiconductor-field-effect transistors (mosfets), which could be monitored through aging-sensitive parameters. In this article, an online gate-oxide degradation monitoring method for planar SiC mosfets is proposed by extracting gate charge time at a specific range of gate voltage. It is based on the findings that the input capacitances of planar SiC mosfets change significantly over gate-oxide degradation, which is theoretically analyzed and experimentally verified. The capacitance variations are converted into the gate charge time as the new aging-sensitive parameter. The new parameter measurement circuit is proposed and integrated into the gate driver module. The article results indicate that the new parameter varies noticeably with gate-oxide degradation and the difference of this parameter caused by junction temperature is much smaller than that caused by degradation. Besides, the parameter is immune to package degradation and load current. The condition monitoring method can be implemented online since the parameter is extracted during the off-state of SiC mosfet devices, which does not affect normal operation. The confirmatory experiment is carried out to verify the correctness of the proposed method. [ABSTRACT FROM AUTHOR]

Monitoring the defective multichip insulated gate bipolar transistor (IGBT) module is a cost-effective approach to improve the quality of customer service. A method using time duration of the gate charge is proposed to monitor bond wires fatigue of the multichip IGBT modules when the modules are in the off-state. It is based on the fact that failure of the chip branch due to bond wires fatigue changes the gate input capacitance of the multichip IGBT module. The health state of bond wires can be converted into the change of time duration of gate charge under the constant gate current. A driver containing the constant current source is proposed. The study results indicate that the time duration of the gate charge decreases significantly when the failure of the chip branch occurs, and the effect of junction temperature can be ignored within the special range of gate voltage. Condition monitoring can be implemented during the off-state of the multichip module and without considering the effects of junction temperature. The confirmatory experiment is carried out to verify the correctness of the proposed method. [ABSTRACT FROM AUTHOR]

Potential defects inside an insulated gate bipolar transistor (IGBT) module can be seen as precursors of being about to wear out, and are important for health monitoring of the IGBT module which is used to enhance reliability. A method for detecting defects in the IGBT module by identifying dynamic changes of the gate current is presented in this paper. It is based on the fact that parasitic elements inside the IGBT module are affected by local damage induced by aging over time, and subsequently, these influences are easily distinguished by dynamic changes of the gate current. The proposed prognostic approach is based on relevance vector machine framework, which can give accurate predictions and allow operators to observe unhealthy IGBT modules inside a power converter, and then take appropriate measures timely to avoid breakdown. The parasitic elements involved in the gate circuit are extracted, and their contributions to dynamic changes of the gate current are also discussed. Finally, a confirmatory experiment is carried out, and the correctness of the proposed method is verified. [ABSTRACT FROM AUTHOR]