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The BeamCal detector, one of the calorimeters in the forward region of the International Linear Collider detector, will serve three purposes: ensure hermeticity of the detector for small polar angles, reduce the backscattering from beamstrahlung electron-positron pairs into the detector center, and provide a low-latency signal for beam diagnostics. The BeamCal specifications in terms of noise suppression, signal charge, pulse rate, and occupancy pose unique challenges in the front end and readout electronics design. The Bean–BeamCal instrumentation IC is the integrated circuit under study to fulfill these requirements. To process the signal charge at the International Collider pulse rate, the Bean uses switched-capacitor filters and a slow reset-release technique. Each channel has a 10-bit successive approximation analog-to-digital converter. The Bean also features a fast feedback adder capable of providing a low latency output for beam diagnostic purposes. This work presents the design and characterization of a 3-channel prototype of the Bean built to validate concepts while the final device will comprise 32 channels. [ABSTRACT FROM PUBLISHER]

Ferroelectric (FE) materials are being studied for a variety of applications in memory, logic, and neuromorphic computing, for which predictive models of FE polarization are essential. In this paper, we present a Monte Carlo simulation framework capable of predicting the dynamic, history-dependent response of an FE under arbitrary input waveforms. The simulation is developed by generalizing the physics-based nucleation-limited switching model for polarization reversal in a polycrystalline FE. Measured polarization reversal data from fabricated FE Hf0.5Zr0.5O2 capacitors are used to extract the statistical distribution of FE grains. After parameter extraction, the model is able to predict the dynamics of the FE capacitor without further calibration. Finally, the model is applied to characterize the dynamic response of FE–dielectric bilayer structures and quantify the reduction in memory window due to device variability. [ABSTRACT FROM AUTHOR]