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The de Bruijn graph, its sequences, and their various generalizations, have found many applications in information theory, including many new ones in the last decade. In this paper, motivated by a coding problem for emerging memory technologies, a set of sequences which generalize the window property of de Bruijn sequences, on its shorter subsequences, are defined. These sequences can be also defined and viewed as constrained sequences. Hence, they will be called locally-constrained de Bruijn sequences and a set of such sequences will be called a locally-constrained de Bruijn code. Several properties and alternative definitions for such codes are examined and they are analyzed as generalized sequences in the de Bruijn graph (and its generalization) and as constrained sequences. Various enumeration techniques are used to compute the total number of sequences for any given set of parameters. A construction method of such codes from the theory of shift-register sequences is proposed. Finally, we show how these locally-constrained de Bruijn sequences and codes can be applied in constructions of codes for correcting synchronization errors in the $\ell $ -symbol read channel and in the racetrack memory channel. For this purpose, these codes are superior in their size to previously known codes. [ABSTRACT FROM AUTHOR]

Cassuto and Blaum recently studied the symbol-pair channel, a model where every two consecutive symbols are read together. This special channel structure is motivated by the limitations of the reading process in high density data storage systems, where it is no longer possible to read individual symbols. In this new paradigm, the errors are not individual symbol errors, but rather symbol-pair errors, where at least one of the symbols is erroneous. In this work, we study bounds and constructions of codes over the symbol-pair channel. We extend the Johnson bound and the linear programming bound for this channel and show that they improve upon existing bounds. We then propose new code constructions that improve upon existing results for pair-distance six, seven, and ten. [ABSTRACT FROM AUTHOR]

Partial MDS (PMDS) codes are a class of erasure-correcting array codes that combine local correction of the rows with global correction of the array. An $\boldsymbol {m}\times \boldsymbol {n}$ array code is called an $(\boldsymbol {r};\boldsymbol {s})$ PMDS code if each row belongs to an ${[}\boldsymbol {n},\boldsymbol {n}-\boldsymbol {r}, \boldsymbol {r}+\textbf {1}{]}$ MDS code and the code can correct erasure patterns consisting of $\boldsymbol {r}$ erasures in each row together with $\boldsymbol {s}$ more erasures anywhere in the array. While a recent construction by Calis and Koyluoglu generates $(\boldsymbol {r};\boldsymbol {s})$ PMDS codes for all $\boldsymbol {r}$ and $\boldsymbol {s}$ , its field size is exponentially large. In this paper, a family of PMDS codes with field size ${\mathcal{ O}}\left ({\max \{\boldsymbol {m},\boldsymbol {n}^{\boldsymbol {r}+\boldsymbol {s}}\}^{\boldsymbol {s}} }\right)$ is presented for the case where $\boldsymbol {r}= {\mathcal{ O}}(1), \boldsymbol {s}= {\mathcal{ O}}(1)$. [ABSTRACT FROM AUTHOR]

Mutually uncorrelated (MU) codes are a class of codes in which no proper prefix of one codeword is a suffix of another codeword. These codes were originally studied for synchronization purposes and recently, Yazdi et al. showed their applicability to enable random access in DNA storage. In this paper,we follow the research of Yazdi et al. and study MU codes along with their extensions to correct errors and balanced codes. We first review a well-known construction of MU codes and study the asymptotic behavior of its cardinality. This task is accomplished by studying a special class of run-length limited codes that impose the longest run of zeros to be at most some function of the codewords length. We also present an efficient algorithm for this class of constrained codes and show how to use this analysis for MU codes. Next, we extend the results on the run-length limited codes in order to study $(d_{h},d_{m})$ -MU codes that impose a minimum Hamming distance of $d_{h}$ between different codewords and $d_{m}$ between prefixes and suffixes. In particular, we show an efficient construction of these codes with nearly optimal redundancy. We also provide similar results for the edit distance and balanced MU codes. Last, we draw connections to the problems of comma-free and prefix synchronized codes. [ABSTRACT FROM AUTHOR]

In this paper, we study two families of codes with availability, namely, private information retrieval (PIR) codes and batch codes. While the former requires that every information symbol has $k$ mutually disjoint recovering sets, the latter imposes this property for each multiset request of $k$ information symbols. The main problem under this paradigm is to minimize the number of redundancy symbols. We denote this value by $r_{P}(n,k)$ and $r_{B}(n,k)$ , for PIR codes and batch codes, respectively, where $n$ is the number of information symbols. Previous results showed that for any constant $k$ , $r_{P}(n,k) = \Theta (\sqrt {n})$ and $r_{B}(n,k)= {\mathcal{ O}}(\sqrt {n}\log (n))$. In this paper, we study the asymptotic behavior of these codes for non-constant $k$ and specifically for $k=\Theta (n^\epsilon)$. We also study the largest value of $k$ such that the rate of the codes approaches 1 and show that for all $\epsilon < 1$ , $r_{P}(n,n^\epsilon) = o(n)$ and $r_{B}(n,n^\epsilon) = o(n)$. Furthermore, several more results are proved for the case of fixed $k$. [ABSTRACT FROM AUTHOR]

We consider the communication of information in the presence of synchronization errors. Specifically, we consider permutation channels in which a transmitted codeword x=(x1,\ldots ,xn) is corrupted by a permutation \pi \in Sn to yield the received word y=(y1,\ldots ,yn) , where yi=x\pi (i) . We initiate the study of worst case (or zero-error) communication over permutation channels that distort the information by applying permutations $\pi $ , which are limited to displacing any symbol by at most $r$ locations, i.e., permutations $\pi $ with weight at most $r$ in the $\ell _\infty $ -metric. We present direct and recursive constructions, as well as bounds on the rate of such channels for binary and general alphabets. Specific attention is given to the case of $r=1$ . [ABSTRACT FROM AUTHOR]

Write-once memory (WOM) is a storage device consisting of $q$ -ary cells that can only increase their value. A WOM code is a coding scheme that allows writing multiple times to the memory without decreasing the levels of the cells. In the conventional model, it is assumed that the encoder can read the memory state before encoding, while the decoder reads only the memory state after encoding. However, there are three more models in this setup, which depend on whether the encoder and the decoder are informed or uninformed with the previous state of the memory. These four models were first introduced by Wolf et al., where they extensively studied the WOM capacity in these models for the binary case. In the non-binary setup, only the model, in which the encoder is informed and the decoder is not, was studied by Fu and Vinck. In this paper, we first present constructions of WOM codes in the models where the encoder is uninformed with the memory state (that is, the encoder cannot read the memory prior to encoding). We then study the capacity regions and maximum sum-rates of non-binary WOM codes for all four models. We extend the results by Wolf et al. and show that the capacity regions for the models in which the encoder is informed and the decoder is informed or uninformed in both the $\epsilon $ -error and the zero-error cases are all identical. We also find the $\epsilon $ -error capacity region; in this case, the encoder is uninformed and the decoder is informed and show that, in contrary to the binary case, it is a proper subset of the capacity region in the first two models. Several more results on the maximum sum-rate are presented as well. [ABSTRACT FROM AUTHOR]

In a memristor crossbar array, functioning as a memory array, a memristor is positioned on each row–column intersection, and its resistance, low or high, represents two logical states. The state of every memristor can be sensed by the current flowing through the memristor. In this paper, we study the sneak path problem in crossbar arrays, in which current can sneak through other cells, resulting in reading a wrong state of the memristor. Our main contributions are modeling the error channel induced by sneak paths, a new characterization of arrays free of sneak paths, and efficient methods to read the array cells while avoiding sneak paths. To each read method, we match a constraint on the array content that guarantees sneak-path free readout, determine the resulting capacity, and provide an efficient encoder that achieves the capacity. [ABSTRACT FROM PUBLISHER]

Random I/O (RIO) codes, recently introduced by Sharon and Alrod, is a coding scheme to improve the random input/output performance of flash memories. Multilevel flash memories require, on the average, more than a single read threshold in order to read a single logical page. This number is important to be optimized since it sets the read latency of flash memories. An $(n,M,t)$ RIO code assumes that $t$ pages are stored in $n$ cells with $t+1$ levels. The first page is read by applying a read threshold between levels $t$ and $t+1$. Similarly, the second page is read by applying a read threshold between levels $t-1$ and $t$, and so on. As a consequence, if a cell reads as bit 1 for a page (say page $m$), the cell also reads as bit 1 for all the successive pages ($m+1, m+2 \cdots$). Therefore, Sharon and Alrod showed that the design of RIO codes is equivalent to the design of WOM codes. The latter family of codes attracted substantial attention in recent years in order to improve the lifetime of flash memories by allowing writing multiple messages to the memory without the need for an erase operation. In this paper, we notice two important distinctions between RIO codes and WOM codes. While in WOM codes, the messages are received one after the other and thus are not known all in advance, in RIO codes the information of all logical pages can be known in advance when programming the cells. Even though this knowledge does not improve the maximum sum-rate of RIO codes, it allows the design of efficient high-rate codes with a moderate block length, which do not exist for WOM codes. We also study another family of RIO codes, called here partial RIO codes, that allow to find even more efficient codes while allowing to sense more than a single threshold to read some pages. [ABSTRACT FROM PUBLISHER]

Partial MDS (PMDS) codes are erasure codes combining local (row) correction with global additional correction of entries, while sector-disk (SD) codes are erasure codes that address the mixed failure mode of current redundant arrays of independent disk (RAID) systems. It has been an open problem to construct general codes that have the PMDS and the SD properties, and previous work has relied on Monte-Carlo searches. In this paper, we present a general construction that addresses the case of any number of failed disks and in addition, two erased sectors. The construction requires a modest field size. This result generalizes previous constructions extending RAID 5 and RAID 6. [ABSTRACT FROM AUTHOR]

Symbol-pair read channels, in which the outputs of the read process are pairs of consecutive symbols, were recently studied by Cassuto and Blaum. This new paradigm is motivated by the limitations of the reading process in high density data storage systems. They studied error correction in this new paradigm, specifically, the relationship between the minimum Hamming distance of an error correcting code and the minimum pair distance, which is the minimum Hamming distance between symbol-pair vectors derived from codewords of the code. It was proved that for a linear cyclic code with minimum Hamming distance dH , the corresponding minimum pair distance is at least dH+3 . In this paper, we show that, for a given linear cyclic code with a minimum Hamming distance dH , the minimum pair distance is at least dH +\left \lceil{ {dH/{2}}}\right \rceil . We then describe a decoding algorithm, based upon a bounded distance decoder for the cyclic code, whose symbol-pair error correcting capabilities reflect the larger minimum pair distance. Finally, we consider the case where the read channel output is a larger number, $b \geqslant 3$ , of consecutive symbols, and we provide extensions of several concepts, results, and code constructions to this setting. [ABSTRACT FROM AUTHOR]

In this paper, we study a new model of defect memory cells, called partially stuck-at memory cells, which is motivated by the behavior of multi-level cells in non-volatile memories, such as flash memories and phase change memories. If a cell can store the q levels 0, 1, {\dots }, q-1 , we say that it is partially stuck-at level s$ , where $1 \leq s \leq q-1$ , if it can only store values, which are at least $s$ . We follow the common setup where the encoder knows the positions and levels of the partially stuck-at cells whereas the decoder does not. Our main contribution in this paper is the study of codes for masking $u$ partially stuck-at cells. We first derive lower and upper bounds on the redundancy of such codes. The upper bounds are based on two trivial constructions. We then present three code constructions over an alphabet of size $q$ , by first considering the case where the cells are partially stuck-at level $s=1$ . The first construction works for $u

Error-correcting codes for permutations have received considerable attention in the past few years, especially in applications of the rank modulation scheme for flash memories. While codes over several metrics have been studied, such as the Kendall $\tau $ , Ulam, and Hamming distances, no recent research has been carried out for erasures and deletions over permutations. In rank modulation, flash memory cells represent a permutation, which is induced by their relative charge levels. We explore problems that arise when some of the cells are either erased or deleted. In each case, we study how these erasures and deletions affect the information carried by the remaining cells. In particular, we study models that are symbol-invariant, where unaffected elements do not change their corresponding values from those in the original permutation, or permutation-invariant, where the remaining symbols are modified to form a new permutation with fewer elements. Our main approach in tackling these problems is to build upon the existing works of error-correcting codes and leverage them in order to construct codes in each model of deletions and erasures. The codes we develop are in certain cases asymptotically optimal, while in other cases, such as for codes in the Ulam distance, improve upon the state of the art results. [ABSTRACT FROM PUBLISHER]

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer devices (e.g., smartphones and cameras) where the number of program-erase cycles is small. However, it is not economical for enterprise storage systems that require a large number of lifetime writes. The proposed approach in this paper for alleviating this problem consists of the efficient integration of two key ideas: 1) improving reliability and endurance by representing the information using relative values via the rank modulation scheme and 2) increasing the overall (lifetime) capacity of the flash device via rewriting codes, namely, performing multiple writes per cell before erasure. This paper presents a new coding scheme that combines rank-modulation with rewriting. The key benefits of the new scheme include: 1) the ability to store close to 2 bit per cell on each write with minimal impact on the lifetime of the memory and 2) efficient encoding and decoding algorithms that make use of capacity-achieving write-once-memory codes that were proposed recently. [ABSTRACT FROM PUBLISHER]

This paper studies new bounds and code constructions that are applicable to the combinatorial granular channel model previously introduced by Sharov and Roth. We derive new bounds on the maximum cardinality of a grain-error-correcting code and propose constructions of codes that correct grain-errors. We demonstrate that a permutation of the classical group codes (e.g., Constantin–Rao codes) can correct a single grain-error. In many cases of interest, our results improve upon the currently best known bounds and constructions. Some of the approaches adopted in the context of grain-errors may have application to related channel models. [ABSTRACT FROM AUTHOR]

Write-once memory (WOM) is a storage medium with memory elements, called cells, which can take on \(q\) levels. Each cell is initially in level 0 and can only increase its level. A \(t\) -write WOM code is a coding scheme, which allows one to store \(t\) messages to the WOM such that on consecutive writes every cell’s level does not decrease. The sum-rate of the WOM code, which is the ratio between the total amount of information written in the \(t\) writes and number of memory cells, is bounded by \(\log (t+1)\) . Our main contribution in this paper is a construction of binary three-write WOM codes with sum-rate approaching 1.885 for sufficiently large number of cells, whereas the upper bound is 2. This improves upon a recent construction of sum-rate 1.809. A key ingredient in our construction is a recent capacity achieving construction of two-write WOM codes, which uses the so-called Wozencraft ensemble of linear codes. In our construction, we encode information in the first and second write in a way that leaves a large number (roughly half) of the cells nonprogrammed. This allows us to use the above two-write construction in order to invoke a third write to the memory. We also give specific constructions of nonbinary two-write WOM codes and multiple writes, which give better sum-rate than the currently best known ones. In the construction of these codes, we build upon previous nonbinary constructions and show how tools such symbols relabeling can help in achieving high sum-rates. [ABSTRACT FROM PUBLISHER]

Inter-cell interference (ICI) is one of the main obstacles to precise programming (i.e., writing) of a flash memory. In the presence of ICI, the voltage level of a cell might increase unexpectedly if its neighboring cells are programmed to high levels. For q-ary cells, the most severe ICI arises when three consecutive cells are programmed to levels high - low - high, represented as (q-1)0(q-1), resulting in an unintended increase in the level of the middle cell and the possibility of decoding it incorrectly as a nonzero value. ICI-free codes are used to mitigate this phenomenon by preventing the programming of any three consecutive cells as (q-1)0(q-1). In this work, we extend ICI-free codes in two directions. First, we consider binary balanced ICI-free codes which, in addition to forbidding the 101 pattern, require the number of 0 symbols and 1 symbols to be the same. Using combinatorial methods, we determine the asymptotic information rate of these codes and show that the asymptotic rate loss due to the imposition of the balanced property is approximately 2%. Extensions to q-ary cells, for q>2 are also discussed. Next, we consider q-ary ICI-free write-once-memory (WOM) codes that support multiple writes of a WOM while mitigating ICI effects. These codes forbid the appearance of the (q-1)0(q-1) pattern in any codeword used in any writing step. Using properties of two-dimensional constrained codes and generalized WOMs, we characterize the maximum sum-rate of t-write ICI-free WOM codes or, equivalently, the t-write sum-capacity of an ICI-free WOM. [ABSTRACT FROM PUBLISHER]

Flash memory is a nonvolatile computer memory comprising blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by erasing an entire block. Since block erasures are highly undesirable, coding schemes—known as floating codes (or flash codes) and buffer codes—have been designed in order to maximize the number of times that information stored in a flash memory can be written (and rewritten) prior to incurring a block erasure. An (n,k,t)q flash code \BBC is a coding scheme for storing k information bits in n cells in such a way that any sequence of up to t writes can be accommodated without a block erasure. The total number of available level transitions in n cells is n(q-1), and the write deficiency of \BBC, defined as \delta (\BBC)=n(q-1)-t, is a measure of how close the code comes to perfectly utilizing all these transitions. In this paper, we show a construction of flash codes with write deficiency O(qk\log k) if q\geqslant\log2k, and at most O(k\log^2k) otherwise. An (n,r,\ell,t)q buffer code is a coding scheme for storing a buffer of r~\ell-ary symbols such that for any sequence of t symbols, it is possible to successfully decode the last r symbols that were written. We improve upon a previous upper bound on the maximum number of writes t in the case where there is a single cell to store the buffer. Then, we show how to improve a construction by Jiang that uses multiple cells, where n\geqslant 2r. [ABSTRACT FROM AUTHOR]

This paper has two goals. The first one is to discuss two related packing problems in the Lee and Manhattan metrics. One is to find good codes for error-correction (i.e., packings of Lee spheres) and the other is to transform the space in a way that volumes are preserved and each Lee sphere (or scaled cross-polytope) will be transformed into a shape inscribed in a small cube. The second goal is to consider weighing matrices for some of these coding problems. Weighing matrices have been used as building blocks for codes in the Hamming metric in various constructions. In this paper, we will consider mainly two types of weighing matrices, namely conference matrices and Hadamard matrices, to construct codes in the Lee (and Manhattan) metric. We will show that these matrices have some desirable properties when considered as generator matrices for codes in these metrics. [ABSTRACT FROM AUTHOR]

Flash memory is a promising new storage technology. Supported by empirical data collected from a Flash memory device, we propose a class of codes that exploits the asymmetric nature of the error patterns in a Flash device using tensor product operations. We call these codes graded bit-error-correcting codes. As demonstrated on the data collected from a Flash chip, these codes significantly delay the onset of errors and therefore have the potential to prolong the lifetime of the memory device. [ABSTRACT FROM PUBLISHER]

A write-once memory (WOM) is a storage device that consists of cells that can take on q values, with the added constraint that rewrites can only increase a cell's value. A length-n, t-write WOM-code is a coding scheme that allows t messages to be stored in n cells. If on the ith write we write one of Mi messages, then the rate of this write is the ratio of the number of written bits to the total number of cells, i.e., \log2Mi/n. The sum-rate of the WOM-code is the sum of all individual rates on all writes. A WOM-code is called a fixed-rate WOM-code if the rates on all writes are the same, and otherwise, it is called a variable-rate WOM-code. We address two different problems when analyzing the sum-rate of WOM-codes. In the first one, called the fixed-rate WOM-code problem, the sum-rate is analyzed over all fixed-rate WOM-codes, and in the second problem, called the unrestricted-rate WOM-code problem, the sum-rate is analyzed over all fixed-rate and variable-rate WOM-codes. In this paper, we first present a family of two-write WOM-codes. The construction is inspired by the coset coding scheme, which was used to construct multiple-write WOM-codes by Cohen and recently by Wu, in order to construct from each linear code a two-write WOM-code. This construction improves the best known sum-rates for the fixed- and unrestricted-rate WOM-code problems. We also show how to take advantage of two-write WOM-codes in order to construct codes for the Blackwell channel. The two-write construction is generalized for two-write WOM-codes with q levels per cell, which is used with ternary cells to construct three- and four-write binary WOM-codes. This construction is used recursively in order to generate a family of t-write WOM-codes for all t. A further generalization of these t-write WOM-codes yields additional families of efficient WOM-codes. Finally, we show a recursive method that uses the previously constructed WOM-codes in order to construct fixed-rate WOM-codes. We conclude and show that the WOM-codes constructed here outperform all previously known WOM-codes for 2\leqslant t\leqslant 10 for both the fixed- and unrestricted-rate WOM-code problems. [ABSTRACT FROM AUTHOR]

A Write Once Memory (WOM) is a storage medium with binary memory elements, called cells, that can change from the zero state to the one state only once. Examples of WOMs include punch cards and optical disks. WOM-codes, introduced by Rivest and Shamir, permit the reuse of a WOM by taking into account the location of cells that have already been changed to the one state. The objective in designing WOM-codes is to use the fewest number of cells to store a specified number of information bits in each of several reuses of the memory. An [n,k,t] WOM-code \cal C is a coding scheme for storing k information bits in n cells t times. At each write, the state of each cell can be changed, provided that the cell is changed from the zero state to the one state. The rate of \cal C, defined by \cal R(\cal C)=kt/n, indicates the total amount of information that is possible to store in a cell in t writes. Two WOM-code constructions correcting a single cell-error were presented by Zémor and Cohen. In this paper, we present another construction of a single-error-correcting WOM-code with a better rate. Our construction can be adapted also for single-error-detection, double-error-correction, and triple-error-correction. For the last case, we use triple-error-correcting BCH-like codes, which were presented by Kasami and more recently described again by Bracken and Helleseth. Finally, we show two constructions that can be combined for the correction of an arbitrary number of errors. [ABSTRACT FROM AUTHOR]