13 results on '"Hook, Terence B."'
Search Results
2. Transistor Matching and Fin Angle Variation in FinFET Technology.
- Author
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Agarwal, Samarth, Hook, Terence B., Bajaj, Mohit, McStay, Kevin, Wang, Weike, and Zhang, Yanli
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FIELD-effect transistors , *SEMICONDUCTOR doping profiles , *SEMICONDUCTOR doping , *SILICON , *GROUP 14 elements - Abstract
The introduction of FinFET architecture was expected to alleviate the issue of mismatch compared with planar technology, given the lower doping levels required. However, several authors have reported better mismatch results for planar technology suggesting additional challenges for FinFET architecture. An additional mechanism previously not considered arising from charge present at points of disturbance in the silicon lattice in tapering and wavering fins is shown to contribute to transistor mismatch. We show that including this mechanism improves the quantitative understanding of mismatch in FinFETs. [ABSTRACT FROM AUTHOR]
- Published
- 2015
- Full Text
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3. Modeling of Effective Thermal Resistance in Sub-14-nm Stacked Nanowire and FinFETs.
- Author
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Jain, Ishita, Gupta, Anshul, Hook, Terence B., and Dixit, Abhisek
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POWER density , *FIELD-effect transistors , *SIMULATION methods & models , *COMPLEMENTARY metal oxide semiconductors , *ELECTRICAL engineering - Abstract
In advanced technology nodes, an increase in power density, use of nonplanar architectures, and novel materials can aggravate local self-heating due to active power dissipation. In this paper, 3-D device simulations are performed to analyze thermal effects in fin-shaped field-effect transistors (FinFETs) and stacked-nanowire FETs (NWFETs). Based on empirically extracted equations, a new model for thermal resistance estimation is proposed, which for the first time takes into account the aggregate impact of a number of fins, number of gate fingers, number, and dimensions of stacked nanowires. We have extracted the proposed model against calibrated 3-D TCAD simulations over a range of device design variables of interest. Our results show that the model may be useful for estimation of thermal resistance in FinFETs and NWFETs with large layouts. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
- View/download PDF
4. Comment on “Channel Length and Threshold Voltage Dependence of a Transistor Mismatch in a 32-nm HKMG Technology”.
- Author
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Hook, Terence B., Johnson, Jeffrey B., Cathignol, Augustin, Cros, Antoine, and Ghibaudo, Gérard
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METAL oxide semiconductor field-effect transistors , *ELECTRIC potential , *SEMICONDUCTOR doping , *INTEGRATED circuits , *FIELD-effect transistors , *METAL oxide semiconductors , *ELECTRONIC circuits ,DESIGN & construction - Abstract
This correspondence briefly describes and reconciles two separate streams of work, which extend the Pelgrom model for a transistor mismatch. While independently conceived and pursued, similar and complementary conclusions have been reported by these groups, refining the understanding of a transistor mismatch to encompass halo-dominated transistor designs. [ABSTRACT FROM AUTHOR]
- Published
- 2011
- Full Text
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5. Spurious Source/Drain Underlap of Large Junction Area NFET's.
- Author
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Hook, Terence B.
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FIELD-effect transistors , *PRODUCTION engineering , *INJECTION lasers - Abstract
Presents information on a study which described a sporadic underlap of some particular field-effect transistor on the scribe line. Determination of the minimal allowed capacitance; Manufacturing data; Process solution; Conclusion.
- Published
- 1999
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6. Toward Microwave S- and X-Parameter Approaches for the Characterization of Ferroelectrics for Applications in FeFETs and NCFETs.
- Author
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Yuan, Zhi Cheng, Gudem, Prasad S., Wong, Michael, Wang, Ji Kai, Hook, Terence B., Solomon, Paul, Kienle, Diego, and Vaidyanathan, Mani
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FIELD-effect transistors , *FERROELECTRIC crystals , *POLARIZATION (Electricity) , *ELECTRIC fields , *HARMONIC analysis (Mathematics) - Abstract
Ferroelectric and negative-capacitance field-effect transistors (FeFETs and NCFETs) have recently garnered great attention as devices for applications in memory and low-power logic, respectively. As these technologies are pursued, it is critical to have a variety of measurement approaches, including methods familiar to the electron-device and microwave communities that can aid in fully understanding the behavior of ferroelectrics in FeFETs and NCFETs. In this paper, we propose and show the viability of using frequency-domain electrical measurement techniques employing the well-known microwave S-parameters, and their large-signal generalization and X-parameters. Our methods provide the means to trace the intrinsic polarization versus electric-field curve of the ferroelectric, i.e., with the parasitics de-embedded, thereby showing the innate ferroelectric response, which cannot be done using conventional techniques. These methods also enable extraction of all the parameters of the Landau–Khalatnikov equation, which is commonly used to model ferroelectric behavior in FeFETs and NCFETs. This paper hence takes a useful step toward methods familiar to the electron-device community that can help to better understand and optimize FeFET and NCFET technologies. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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- View/download PDF
7. Series Resistance Reduction With Linearity Assessment for Vertically Stacked Junctionless Accumulation Mode Nanowire FET.
- Author
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Bansal, Anil K., Kumar, Manoj, Gupta, Charu, Hook, Terence B., and Dixit, Abhisek
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FIELD-effect transistors , *NANOWIRES , *SEMICONDUCTOR junctions , *RADIO frequency , *SEMICONDUCTOR doping - Abstract
Vertically stacked junctionless accumulation mode (JLAM) nanowire field effect transistors (NWFETs) outperform inversion-mode (IM) NWFETs below 10-nm technology nodes, but the vertical stacking of nanowires (NWs) has a constraint of position dependent drain current. This paper encompasses: 1) extensive investigation of the impact of series resistance on IM, JL mode, and JLAM NWFET architectures; 2) a proposed approach to mitigate the series resistance; and 3) linearity assessment of stacked JLAM-NWFET for radio frequency (RF) applications. We have suggested that by decreasing the channel doping in the bottom NW with respect to the top NW in a stack, the current can be significantly improved along with the reduction in series resistance. This improves the overall uniformity of drain current in each NW for stacked JLAM-NWFET. The linearity performance of the device is assessed in terms of following figure of merits (FOMs): IIP3, 1-dB compression point, and higher order derivative of transconductance ${g}_{m\textsf {2}}$ and ${g}_{m\textsf {3}}$. These FOMs are evaluated through numerical simulations using Sentaurus Technology Computer-Aided Design to confirm the robustness of the device against intermodulation distortion making it suitable for low power radio frequency integrated circuit design applications. The proposed solution allows higher drive current, improved linearity, and thus lower distortion in stacked JLAM-NWFET. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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- View/download PDF
8. 3-D LER and RDF Matching Performance of Nanowire FETs in Inversion, Accumulation, and Junctionless Modes.
- Author
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Bansal, Anil K., Gupta, Charu, Gupta, Anshul, Singh, Ramendra, Dixit, Abhisek, and Hook, Terence B.
- Subjects
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FIELD-effect transistors , *COMPLEMENTARY metal oxide semiconductors , *NANOWIRES , *DOPING agents (Chemistry) , *GAUSSIAN distribution , *POISSON'S equation - Abstract
Nanowire field-effect transistors (NWFETs) have emerged as promising candidates for realization of advanced CMOS technology nodes. Due to small nanowire dimensions, NWFETs are vulnerable to the impact of process-induced random local variations, such as the line edge roughness (LER) and random dopant fluctuation (RDF). NWFETs have three different device modes, namely, the inversion mode (IM), the accumulation mode (AM), and the junctionless (JL) mode. In this paper, a 3-D quasiatomistic LER model is used for the analysis of LER-induced mismatch in JL, IM, and AM NWFETs. We have also compared the impact of 3-D LER with that of 2-D LER. In addition, another emerging simulation methodology known as statistical impedance field method is utilized to analyze the impact of RDF on the three flavors of NWFETs. We show that JL NWFETs have much higher mismatch due to both LER and RDF than their IM and AM NWFET counterparts with otherwise identical device structure. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
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9. Channel Material Dependence of Wave Function Deformation Scattering in Ultrascaled FinFETs.
- Author
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Wong, Michael, Holland, Kyle D., Ji Kai Wang, Cam, Thomas, Hook, Terence B., Kienle, Diego, Gudem, Prasad S., and Vaidyanathan, Mani
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WAVE functions , *FIELD-effect transistors , *GREEN'S functions , *DIFFERENTIAL equations , *POTENTIAL theory (Mathematics) - Abstract
We investigate the channel material dependence of wave function deformation scattering (WDS), a phenomenon that occurs when the shape of the carrier wave function is forced to change as the channel is traversed. Line-edge roughness (LER) is one nonideality that can induce WDS in confined device geometries. We perform nonequilibrium Green's function simulations of ensembles of ultrascaled Fin Field Effect Transistors that exhibit correlated LER to determine the resulting on-current distributions. By considering various channel materials, we demonstrate two trends. First, WDS has a greater impact when the transport effective mass of the channel material is low, due to stronger coupling between conducting subbands. Second, WDS has a greater impact when the confinement effective mass of the channel material is high, due to the presence of more conducting subbands, which further enhances coupling. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
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10. Analytical Modeling of Parasitic Capacitance in Inserted-Oxide FinFETs.
- Author
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Singh, Ramendra, Gupta, Anshul, Gupta, Charu, Bansal, Anil K., Hook, Terence B., and Dixit, Abhisek
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ELECTRIC capacity , *FIELD-effect transistors , *COMPUTER-aided design , *COMPUTER-aided engineering , *SIMULATION methods & models - Abstract
An analytical model of parasitic capacitancein inserted-oxide FinFETs (iFinFETs) is proposed. A comparative study on the parasitic capacitance of contemporary multigate devices conforming to 7-nm technology node targets is presented. The proposed model is validated against 3-D Technology Computer-Aided Design (TCAD) simulations. Dependence of the iFinFET parasitic capacitance on device design parameters, such as the inserted-oxide thickness (Tiox) and inserted-oxide recess (Trec), is shown using the proposed model and TCAD simulations. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
- View/download PDF
11. Impact of Short-Wavelength and Long-Wavelength Line-Edge Roughness on the Variability of Ultrascaled FinFETs.
- Author
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Wong, Michael, Holland, Kyle D., Anderson, Sam, Rizwan, Shahriar, Yuan, Zhi Cheng Jason, Hook, Terence B., Kienle, Diego, Gudem, Prasad S., and Vaidyanathan, Mani
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WAVELENGTH measurement , *SURFACE roughness , *FIELD-effect transistors , *SIMULATION methods & models , *QUANTUM mechanics - Abstract
We examine the impact of line-edge roughness (LER) on the variability in the on-current and saturation threshold voltage of ultrascaled FinFET devices via quantum-mechanical transport simulation. We obtain a realistic model of LER by decomposing the LER into short- $\lambda $ and long- $\lambda $ fluctuations, and we consider their separate influences on device performance. We show that the long- $\lambda $ fluctuations lead to greater device variability than the short- $\lambda $ fluctuations, and we explain the difference between the two cases via the influence of fluctuating quantum confinement arising from the LER. Finally, we consider devices in which the long- $\lambda $ fluctuations of the two fin edges are correlated and demonstrate that this correlation significantly improves the variability. Thus, we show the continued need for fabrication technology either to reduce the amplitude of the long- $\lambda $ fluctuations or to ensure the long- $\lambda $ fluctuations between the sidewalls of ultrascaled FinFET devices are correlated. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
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12. Switching-Speed Limitations of Ferroelectric Negative-Capacitance FETs.
- Author
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Yuan, Zhi Cheng, Rizwan, Shahriar, Wong, Michael, Holland, Kyle, Anderson, Sam, Vaidyanathan, Mani, Hook, Terence B., Kienle, Diego, Gadelrab, Serag, and Gudem, Prasad S.
- Subjects
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FERROELECTRICITY , *FIELD-effect transistors , *MOORE'S law , *POWER density , *LEAD zirconate titanate - Abstract
Recently, negative-capacitance FETs (NCFETs) have been proposed to reduce subthreshold slope and help continue supply-voltage scaling alongside channel-length scaling. We investigate the high-frequency switching behavior of NCFETs using the Landau–Khalatnikov equation to model ferroelectric materials. Multidomain interactions in the ferroelectric are considered, resulting in strong agreement with experimental measurements. Operation of NCFETs at gigahertz frequencies is investigated with this experimentally validated multidomain model. We find that the effectiveness of the voltage amplification in NCFETs is strongly dependent on the viscosity coefficient $\rho $ of the ferroelectric, and that a low \rho $ ( <0.1~\Omega \cdot \text {m} ) is required for the operation at the high gigahertz frequencies. [ABSTRACT FROM PUBLISHER]
- Published
- 2016
- Full Text
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13. Transistor Mismatch Properties in Deep-Submicrometer CMOS Technologies.
- Author
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Yuan, Xiaobin, Shimizu, Takashi, Mahalingam, Umashankar, Brown, Jeffrey S., Habib, Kazi Z., Tekleab, Daniel G., Su, Tai-Chi, Satadru, Sarkar, Olsen, C. Michael, Lee, Hyunwoo, Pan, Li-Hong, Hook, Terence B., Han, Jin-Ping, Park, Jae-Eun, Na, Myung-Hee, and Rim, Ken
- Subjects
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FIELD-effect transistors , *COMPLEMENTARY metal oxide semiconductors , *MICROMETERS , *DATA analysis , *ELECTRIC potential , *SILICON oxide - Abstract
Transistor mismatch data and analysis from poly/SiON and high-k/metal-gate (HKMG) bulk CMOS technologies are presented. It is found that the traditional mismatch figure of merit from the Pelgrom plot (AVT) continuously scales down as technology advances. Furthermore, the AVT values for both nFET and pFET in the HKMG technology are significantly reduced from poly/SiON technologies. By normalizing the mismatch data against electrical oxide thickness (TINV), threshold voltage (VTH), and effective work function, a direct comparison of the mismatch data from various technologies is made. The differences in nFET and pFET mismatch behaviors in both poly/SiON and HKMG technologies are discussed in detail. Correlation between transistor VTH mismatch and flicker noise variation is observed in both poly/SiON and HKMG technologies. Finally, it is quantitatively demonstrated that effective work function variation does not generate significant VTH variability in the present HKMG technology. [ABSTRACT FROM AUTHOR]
- Published
- 2011
- Full Text
- View/download PDF
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