1. Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors.
- Author
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Li, Flora M., Hsieh, Gen-Wen, Dalal, Sharvari, Newton, Marcus C., Stott, James E., Hiralal, Pritesh, Nathan, Arokia, Warburton, Paul A., Unalan, Husnu Emrah, Beecher, Paul, Flewitt, Andrew J., Robinson, Ian, Amaratunga, Gehan, and Milne, William I.
- Subjects
ZINC oxide ,NANOSTRUCTURES ,ELECTRON mobility ,THIN film transistors ,NANOWIRES ,ORGANIC semiconductors ,SEMICONDUCTORS ,BUTYRIC acid - Abstract
This paper reports on the synthesis of zinc oxide (ZnO nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenvl-C
61 -butyric acid methyl ester) show electron field-effect mobilities in the range 03-0.6 cm²V-1 s-1 , representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 106 at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs. [ABSTRACT FROM AUTHOR]- Published
- 2008
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